The ideal porous structure of EDLC carbon electrodes with extremely high capacitance von Urita, K, Urita, C, Fujita, K, Horio, K, Yoshida, M, Moriguchi, I

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Analysis of Dependence of Breakdown Voltage on Gate-Drain Distance in AlGaN/GaN HEMTs With High-k Passivation Layer von Tomita, R., Ueda, S., Kawada, T., Mitsuzono, H., Horio, K.

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Jamie Dow, Passions and Persuasion in Aristotle’s Rhetoric. Pp. ix+248, Oxford UP 2015. ISBN 9780198716266 von Horio, K.

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Expression of myeloperoxidase enhances the chemosensitivity of leukemia cells through the generation of reactive oxygen species and the nitration of protein von Sawayama, Y, Miyazaki, Y, Ando, K, Horio, K, Tsutsumi, C, Imanishi, D, Tsushima, H, Imaizumi, Y, Hata, T, Fukushima, T, Yoshida, S, Onimaru, Y, Iwanaga, M, Taguchi, J, Kuriyama, K, Tomonaga, M

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Numerical analysis of slow current transients and power compression in GaAs FETs von Kazami, Y., Kasai, D., Horio, K.

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Two-dimensional analysis of surface-state effects on turn-on characteristics in GaAs MESFETs von Horio, K., Yamada, T.

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Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs von Mitani, Y., Kasai, D., Horio, K.

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Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs von Horio, K., Wakabayashi, A.

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Analysis of buffer-trapping effects on gate lag, drain lag and current collapse in AlGaN/GaN HEMTs von Horio, K., Nakajima, A.

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Inguinal Hernia: Crossfire Between the Meshes von Teoh, A., Chan, K., Chiu, P., Leong, H., Ng, E., Protasov, A. V., Titarov, D. L., Shemyatovsky, K. A., Origi, M., Moroni, M. R., Veronesi, P., Militello, P., Branchini, L., Frattolillo, F., Varale, R., Pappalardo, V., Zuliani, W., Burgmans, I., Voorbrood, C., Schouten, N., Clevers, G. J., Davids, P. H. P., Verleisdonk, E. J. M. M., Simmermacher, R. K. J., Miyazaki, K., Porrero-Carro, J. L., García-Pastor, P., Hidalgo-Pascual, M., Gutierrez-Romero, R., Picazo-Yeste, J., Jenkin, A., Perera, M., Presley, R., Amato, G., Romano, G., Agrusa, A., Di Buono, G., Cocorullo, G., Gulotta, G., Fang, Z. X., Ren, F., Zhou, J. P., Liu, D. C., Tian, J., Ungpinitpong, W., Morfesis, F., Rose, B., Kishimoto, T., Okada, Y., Hayashi, E., Nagata, J., Ohira, S., Horio, K., Ishida, Y., Takahashi, R., Kanie, Y., Terao, N., Noritake, O., Narui, R., Kubota, H., Lorenz, R., Koch, A., Born, H., Wiese, M., Cejnar, S., Kalhan, S., Bhardwaj, A., Bhatia, P., Khetan, M., John, S., Bindal, V.

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Analysis of gate-lag phenomena in recessed-gate and buried-gate GaAs MESFETs von Wakabayashi, A., Mitani, Y., Horio, K.

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Analysis of buffer-related lag phenomena and current collapse in GaN FETs von Itagaki, K., Kobayashi, N., Horio, K.

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Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFETs von Horio, K., Wakabayashi, A., Yamada, T.

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Reduction of buffer-related current collapse in GaN FETs under favour of a field plate von Itagaki, K., Nakajima, A., Horio, K.

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The ideal porous structure of EDLC carbon electrodes with extremely high capacitanceElectronic supplementary information (ESI) available: XRD profiles of the (10) plane, pore size... von Urita, K, Urita, C, Fujita, K, Horio, K, Yoshida, M, Moriguchi, I

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Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors von Horio, Kazushige, Yonemoto, Ken, Takayanagi, Hiroki, Nakano, Hiroyuki

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Buffer-trapping effects on drain lag and power compression in GaN FET von Horio, K., Yonemoto, K.

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Two-Dimensional Analysis of Field-Plate Effects on Surface-State-Related Current Transients and Power Slump in GaAs FETs von Horio, K, Tanaka, T, Itagaki, K, Nakajima, A

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Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET's von Horio, K., Satoh, K.

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Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface von Horio, K., Yanai, H.

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