Quantitative prediction of junction leakage in bulk-technology CMOS devices von Duffy, R., Heringa, A., Venezia, V.C., Loo, J., Verheijen, M.A., Hopstaken, M.J.P., van der Tak, K., de Potter, M., Hooker, J.C., Meunier-Beillard, P., Delhougne, R.

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MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement von Vellianitis, G, Apostolopoulos, G, Mavrou, G, Argyropoulos, K, Dimoulas, A, Hooker, J.C, Conard, T, Butcher, M

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Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors von SCHRAM, T, RAGNARSSON, L.-A, DE MEYER, K, DE GENDT, S, HEYNS, M, LUJAN, G, DEWEERD, W, CHEN, J, TSAI, W, HENSON, K, LANDER, R. J. P, HOOKER, J. C, VERTOMMEN, J

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Application of Ru-based gate materials for CMOS technology von T˘apajna, M., Písec˘ny, P., Lupták, R., Hus˘eková, K., Fröhlich, K., Harmatha, L., Hooker, J.C., Roozeboom, F., Jergel, J.

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Preparation of SrRuO3 films for advanced CMOS metal gates von Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J.C., Roozeboom, F., Kobzev, A.P., Wiemer, C., Ferrari, S., Fanciulli, M., Rossel, C., Cabral, C.

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Ru and RuO2 gate electrodes for advanced CMOS technology von Fröhlich, K., Husekova, K., Machajdik, D., Hooker, J.C., Perez, N., Fanciulli, M., Ferrari, S., Wiemer, C., Dimoulas, A., Vellianitis, G., Roozeboom, F.

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Reliability degradation of HfSiO gate dielectric layers: influence of nitridation von Vellianitis, G., Pétry, J., Hooker, J.C., Delabie, A., De Gendt, S.

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Metal oxide gate electrodes for advanced CMOS technology von Fröhlich, K., Hušeková, K., Oszi, Z., Hooker, J.C., Fanciulli, M., Wiemer, C., Dimoulas, A., Vellianitis, G., Roozeboom, F.

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Novel process to pattern selectively dual dielectric capping layers using soft-mask only von Schram, T., Kubicek, S., Rohr, E., Brus, S., Vrancken, C., Chang, S.-Z., Chang, V.S., Mitsuhashi, R., Okuno, Y., Akheyar, A., Cho, H.-J., Hooker, J.C., Paraschiv, V., Vos, R., Sebai, F., Ercken, M., Kelkar, P., Delabie, A., Adelmann, C., Witters, T., Ragnarsson, L.-A., Kerner, C., Chiarella, T., Aoulaiche, M., Moon-Ju Cho, Kauerauf, T., De Meyer, K., Lauwers, A., Hoffmann, T., Absil, P.P., Biesemans, S.

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Performance improvement of self-aligned HfO 2/TaN and SiON/TaN nMOS transistors von Schram, T., Ragnarsson, L.-Å, Lujan, G., Deweerd, W., Chen, J., Tsai, W., Henson, K., Lander, R.J.P., Hooker, J.C., Vertommen, J., Meyer, K. De, Gendt, S. De, Heyns, M.

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Metal oxide gate electrodes for advanced CMOS technology von Fröhlich, K., Hušeková, K., Oszi, Z., Hooker, J.C., Fanciulli, M., Wiemer, C., Dimoulas, A., Vellianitis, G., Roozeboom, F.

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Preparation of SrRuO 3 films for advanced CMOS metal gates von Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J.C., Roozeboom, F., Kobzev, A.P., Wiemer, C., Ferrari, S., Fanciulli, M., Rossel, C., Cabral, C.

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Tall triple-gate devices with TiN/HfO/sub 2/ gate stack von Collaert, N., Demand, M., Ferain, I., Lisoni, J., Singanamalla, R., Zimmerman, P., Yim, Y.S., Schram, T., Mannaert, G., Goodwin, M., Hooker, J.C., Neuilly, F., Kim, M.C., De Meyer, K., De Gendt, S., Boullart, W., Jurezak, M., Biesemans, S.

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A practical baseline process for advanced CMOS devices research [sub-50 nm MOSFETs] von Ponomarev, Y.V., Loo, J.J.G.P., Rittersma, Z.M., Lander, R.J.P., Hooker, J.C., Doornbos, G., Surdeanu, R., Cubaynes, F.N., Dachs, C.J.J., Kubicek, S., Henson, K., Lindsay, R.

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Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal von Kubicek, S., Schram, T., Paraschiv, V., Vos, R., Demand, M., Adelmann, C., Witters, T., Nyns, L., Ragnarsson, L.-A., Yu, H., Veloso, A., Singanamalla, R., Kauerauf, T., Rohr, E., Brus, S., Vrancken, C., Chang, V.S., Mitsuhashi, R., Akheyar, A., Cho, H.-J., Hooker, J.C., O'Sullivan, B.J., Chiarella, T., Kerner, C., Delabie, A., Van Elshocht, S., De Meyer, K., De Gendt, S., Absil, P., Hoffmann, T., Biesemans, S.

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Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs von Subramanian, V., Parvais, B., Borremans, J., Mercha, A., Linten, D., Wambacq, P., Loo, J., Dehan, M., Collaert, N., Kubicek, S., Lander, R.J.P., Hooker, J.C., Cubaynes, F.N., Donnay, S., Jurczak, M., Groeseneken, G., Sansen, W., Decoutere, S.

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Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs von Pawlak, B.J., Duffy, R., Hooker, J.C., Hoffman, T., Felch, S.B., Eyben, P., Absil, P., Biesemans, S., Lander, R.J.P.

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Metal Inserted Poly-Si (MIPS) and FUSI dual metal (TaN and NiSi) CMOS integration von Singanamalla, R., van Dal, M.J.H., Demand, M., Shamiryan, D., Beckx, S., Jaenen, P., Locorotondo, S., Yu, H., Hooker, J.C., Kubicek, S., de Meyer, K., Biesemans, S., Juffermans, C., Lander, R.J.P.

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Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer von Petry, J., Singanamalla, R., Xiong, K., Ravit, C., Simoen, E., O'Connor, R., Veloso, A., Adelmann, C., Van Elshocht, S., Paraschiv, V., Brus, S., Van Berkum, J., Kubicek, S., De Meyer, K., Biesemans, S., Hooker, J.C.

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Callithamnion montagnei Hook.f

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