Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method von Bremner, S. P., Levy, M. Y., Honsberg, C. B.

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Interfacial intermixing and anti-phase boundaries in GaP/Si(001) heterostructures von Boley, Allison, Luna, Esperanza, Zhang, C., Faleev, N., Honsberg, C.B., Smith, David J.

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Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers von Mansoori, A., Addamane, S.J., Renteria, E.J., Shima, D.M., Behzadirad, M., Vadiee, E., Honsberg, C., Balakrishnan, G.

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Nanostructured Absorbers for Multiple Transition Solar Cells von Levy, M.Y., Honsberg, C.

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Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I—High-resolution x-ray diffraction and x-ray topography von Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Kazimirov, A.Yu, Honsberg, C.

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Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces von Bremner, S.P., Ghosh, K., Nataraj, L., Cloutier, S.G., Honsberg, C.B.

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Variability of heterostructure type with thickness of barriers and temperature in the InAs/GaAsSb quantum dot system von Pancholi, A., Bremner, S.P., Boyle, J., Stoleru, V.G., Honsberg, C.B.

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AlGaSb-Based Solar Cells Grown on GaAs: Structural Investigation and Device Performance von Vadiee, E., Renteria, E., Zhang, C., Williams, J. J., Mansoori, A., Addamane, S., Balakrishnan, G., Honsberg, C. B.

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Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II—Transmission electron microscopy and atomic force microscop... von Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Magonov, S., Smith, D.J., Honsberg, C.

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High growth speed of gallium nitride using ENABLE-MBE von Williams, J.J., Fischer, A.M., Williamson, T.L., Gangam, S., Faleev, N.N., Hoffbauer, M.A., Honsberg, C.B.

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Design and characterization of GaN∕InGaN solar cells von Jani, Omkar, Ferguson, Ian, Honsberg, Christiana, Kurtz, Sarah

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TEM Characterization of InAs Quantum Dots with GaAsSb Spacer Layers von Boley, A., Kim, Y., Ban, K.-Y., Honsberg, C. B., Smith, D. J.

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Potential cost reduction of buried-contact solar cells through the use of titanium dioxide thin films von Richards, B.S., Rowlands, S.F., Ueranatasun, A., Cotter, J.E., Honsberg, C.B.

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Enhancing the surface passivation of TiO2 coated silicon wafers von Richards, B. S., Cotter, J. E., Honsberg, C. B.

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TiO2 DLAR coatings for planar silicon solar cells von Richards, B. S., Rowlands, S. F., Honsberg, C. B., Cotter, J. E.

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Sb dissociative surface coverage model for incorporation of antimony in GaAsSb layers grown on GaAs (0 0 1) substrates von Zhang, Z., Ghosh, K., Faleev, N.N., Wang, H., Honsberg, C.B., Reece, P., Bremner, S.P.

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Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures von Boley, Allison, Luna, Esperanza, Zhang, C., Faleev, N., Honsberg, C. B., Smith, David J.

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Gallium nitride grown by molecular beam epitaxy at low temperatures von Jeffries, A.M., Ding, L., Williams, J.J., Williamson, T.L., Hoffbauer, M.A., Honsberg, C.B., Bertoni, M.I.

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Design and Realization of Wide-Band-Gap ( \sim 2.67 eV) InGaN p-n Junction Solar Cell von Jampana, B.R., Melton, A.G., Jamil, M., Faleev, N.N., Opila, R.L., Ferguson, I.T., Honsberg, C.B.

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Very high efficiency solar cell modules von Barnett, Allen, Kirkpatrick, Douglas, Honsberg, Christiana, Moore, Duncan, Wanlass, Mark, Emery, Keith, Schwartz, Richard, Carlson, Dave, Bowden, Stuart, Aiken, Dan, Gray, Allen, Kurtz, Sarah, Kazmerski, Larry, Steiner, Myles, Gray, Jeffery, Davenport, Tom, Buelow, Roger, Takacs, Laszlo, Shatz, Narkis, Bortz, John, Jani, Omkar, Goossen, Keith, Kiamilev, Fouad, Doolittle, Alan, Ferguson, Ian, Unger, Blair, Schmidt, Greg, Christensen, Eric, Salzman, David

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