Carbon nanotubes in interconnect applications von Kreupl, F, Graham, A.P, Duesberg, G.S, Steinhögl, W, Liebau, M, Unger, E, Hönlein, W

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Towards the integration of carbon nanotubes in microelectronics von Graham, A.P., Duesberg, G.S., Seidel, R., Liebau, M., Unger, E., Kreupl, F., Hönlein, W.

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Scaling of Metal Interconnects: Challenges to Functionality and Reliability von Engelhardt, M., Schindler, G., Traving, M., Stich, A., Gabric, Z., Pamler, W., Hoenlein, W.

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A novel capacitor technology based on porous silicon von Lehmann, V, Hönlein, W, Reisinger, H, Spitzer, A, Wendt, H, Willer, J

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A novel low-temperature (Ba, Sr)TiO3(BST) process with Ti/TiN barrier for Gbit DRAM applications von BEITEL, G, WENDT, H, NAGEL, N, GSCHWANDTNER, A, PAMLER, W, HÖNLEIN, W, DEHM, C, MAZURE, C, FRITSCH, E, WEINRICH, V, ENGELHARDT, M, HASLER, B, RÖHR, T, BERGMANN, R, SCHELER, U, MALEK, K.-H

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Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD) von Roeder, J.F, Hendrix, B.C, Hintermaier, F, Desrochers, D.A, Baum, T.H, Bhandari, G, Chappuis, M, Van Buskirk, P.C, Dehm, C, Fritsch, E, Nagel, N, Wendt, H, Cerva, H, Hönlein, W, Mazuré, C

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Copper damascene interconnects for the 65 nm technology node: a first look at the reliability properties von Steinlesberger, G., von Glasow, A., Engelhardt, M., Schindler, G., Honlein, W., Holz, M., Bertagnolli, E.

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ONO technology von Hönlein, W., Reisinger, H.

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Thickness determination of thin SiO2 on silicon von Reisinger, H., Oppolzer, H., Hönlein, W.

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Technology challenges and solutions for 1Gbit and beyond von Mazure, Carlos, Alsmeier, Johann, Dehm, Christine, Hönlein, Wolfgang

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FERROELECTRIC STRONTIUM BISMUTH TANTALATE THIN FILMS DEPOSITED BY METALLORGANIC CHEMICAL VAPOUR DEPOSITION (MOCVD) von Roeder, J F, Hendrix, B C, Hintermaier, F, Desrochers, D A, Baum, T H, Bhandari, G, Chappuis, M, Van Buskirk, P C, Dehm, C, Fritsch, E, Nagel, N, Wendt, H, Cerva, H, Honlein, W, Mazure, C

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Template grown multiwall carbon nanotubes von Kreupl, F, Graham, A P, Unger, E, Liebau, M, Gabric, Z, Hoenlein, W

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Controlled CVD-growth of multiwalled CNTs von Duesberg, G S, Kreupl, F, Graham, A, Liebau, M, Unger, E, Gabric, Z, Hoenlein, W

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Energy loss of warm electrons at the interface of (100) silicon MOSFETS von Hönlein, W., Landwehr, G.

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Negative magnetoresistance of (100) n-Si mosfets under substrate bias von Hönlein, W., Landwehr, G.

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Energy relaxation of warm electrons in (100)-Si-MOSFETs under substrate bias von Hönlein, W., Landwehr, G.

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Optimisation of a 5 nm ONO-multilayer-dielectric for 64 Mbit DRAMs von Spitzer, A., Reisinger, H., Honlein, W.

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Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density FeRAM applications von Hintermaier, Frank, Hendrix, Bryan, Desrochers, Debra, Roeder, Jeffrey, Baum, Thomas, Buskirk, Peter Van, Bolten, Dirk, Grossmann, Michael, Lohse, Oliver, Schumacher, Marcus, Waser, Rainer, Cerva, Hans, Dehm, Christine, Fritsch, Elke, Hönlein, Wolfgang, Mazuré, Carlos, Nagel, Nicolas, Thwaite, Peter, Wendt, Hermann

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Influence of the MOS \Metal/Oxide/Silicon\ Surface Channel on a Channel-to-Source Contact Diode Characteristic \Abstract only von Honlein, W, Klitzing, K V, Landwehr, G

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Boron sidewall implantation and selective etching of p-doped poly-Si for 1 Gbit DRAM stacked capacitors von Wendt, H., Honlein, W., Franosch, M., Hasler, B., Widmann, D.

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