High permittivity quaternary metal ( Hf Ta Ti O x ) oxide layer as an alternative high- κ gate dielectric von Li, Hong-Jyh, Price, J., Gardner, Mark, Lu, Nan, Kwong, Dim-Lee

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Hafnium titanate as a high permittivity gate insulator:Electrical and physical characteristics and thermodynamic stability von Li, Min, Zhang, Zhihong, Campbell, Stephen A., Li, Hong-Jyh, Peterson, Jeff J.

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Boron retarded diffusion in the presence of indium or germanium von Hong-Jyh Li, Kirichenko, T.A., Kohli, P., Banerjee, S.K., Graetz, E., Tichy, R., Zeitzoff, P.

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Dual high-/kappa/ gate dielectric with poly gate electrode: HfSiON on nMOS and Al(2)O(3) capping layer on pMOS von Hong-Jyh Li, Gardner, M I

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Indium out-diffusion from silicon during rapid thermal annealing von Hong-Jyh Li, Bennett, J., Zeitzoff, P., Kirichenko, T.A., Banerjee, S.K., Henke, D.

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Boron diffusion in silicon in the presence of other species von Li, Hong-Jyh, Kohli, Puneet, Ganguly, Swaroop, Kirichenko, Taras A., Banerjee, Sanjay, Zeitzoff, Peter

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Impact of Nitrogen on PBTI Characteristics of HfSiON/TiN Gate Stacks von Krishnan, S.A., Quevedo-Lopez, M., Li, H.-J., Kirsch, P., Choi, R., Young, C., Peterson, J.J., Lee, B.H., Bersuker, G., Lee, J.C.

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Coding the chaos in a semiconductor diode for information transmission von Li, Hong-Jyh, Chern, Jyh-Long

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Identification of sub-band-gap absorption features at the HfO2∕Si(100) interface via spectroscopic ellipsometry von Price, J., Lysaght, P. S., Song, S. C., Li, Hong-Jyh, Diebold, A. C.

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Charge trapping dependence on the physical structure of ultra-thin ALD-HfSiON/TiN gate stacks von Krishnan, S.A., Quevedo-Lopez, M.A., Choi, R., Kirsch, P.D., Young, C., Harris, R., Peterson, J.J., Hong-Jyh Li, Byoung Hun Lee, Lee, J.C.

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Dual high-[kappa] gate dielectric with poly gate electrode: HfSiON on nMOS and Al2O3 capping layer on pMOS von Li, Hong-Jyh, Gardner, M.I

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Dual high- Kappa gate dielectric with poly gate electrode: HfSiON on nMOS and Al sub(2)O sub(3) capping layer on pMOS von Li, Hong-Jyh, Gardner, MI

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Identification of sub-band-gap absorption features at the Hf O 2 ∕ Si ( 100 ) interface via spectroscopic ellipsometry von Price, J., Lysaght, P. S., Song, S. C., Li, Hong-Jyh, Diebold, A. C.

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Dual high-/spl kappa/ gate dielectric with poly gate electrode: HfSiON on nMOS and Al/sub 2/O/sub 3/ capping layer on pMOS von Hong-Jyh Li, Gardner, M.I.

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B diffusion in Si with pre-amorphization of different species von Li, Hong-Jyh, Zeitzoff, Peter, Larson, Larry, Banerjee, Sanjay

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Boron diffusion and activation in the presence of other species von Hong-Jyh Li, Kohli, P., Ganguly, S., Kirichenko, T.A., Zeitzoff, P., Torres, K., Banerjee, S.

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Subnanometer scaling of HfO2/metal electrode gate stacks von Peterson, Jeff J, Young, Chadwin D, Barnett, Joel, Gopalan, Sundar, Gutt, Jim, Lee, Choong-Ho, Li, Hong-Jyh, Hou, Luo-Hung, Kim, Yudong, Lim, Chan, Chaudhary, Nirmal, Moumen, Naim, Lee, Byoung-Hun, Bersuker, Gennadi, Brown, George A, Zeitzoff, Peter M

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EOT scaling and device issues for high-k gate dielectrics von Gardner, M.I., Gopalan, S., Gutt, J., Peterson, J., Hong-Jyh Li, Huff, H.R.

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Boron retarded diffusion in the presence of indium or germanium von Hong-Jyh Li, Kirichenko, T.A., Kohli, P., Banerjee, S.K., Graetz, E., Tichy, R., Zeitzoff, P.

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Subnanometer Scaling of HfO[sub 2]/Metal Electrode Gate Stacks von Peterson, Jeff J., Young, Chadwin D., Barnett, Joel, Gopalan, Sundar, Gutt, Jim, Lee, Choong-Ho, Li, Hong-Jyh, Hou, Tuo-Hung, Kim, Yudong, Lim, Chan, Chaudhary, Nirmal, Moumen, Naim, Lee, Byoung-Hun, Bersuker, Gennadi, Brown, George A., Zeitzoff, Peter M., Gardner, Mark I., Murto, Robert W., Huff, Howard R.

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