Formation and stability of silicides on polycrystalline silicon von Colgan, E.G., Gambino, J.P., Hong, Q.Z.

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Salicides: materials, scaling and manufacturability issues for future integrated circuits ( invited) von Kittl, J.A, Shiau, W.T, Hong, Q.Z, Miles, D

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Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies von Kittl, J.A, Hong, Q.Z

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Composition control and growth mechanisms in solid phase epitaxy of GeSi in Ge Si1−/Pd2Si/Si systems von Hong, Q.Z, Mayer, J.W

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Composition control and growth mechanisms in solid phase epitaxy of GeSi in Ge xSi 1− x/Pd 2Si/Si systems von Hong, Q.Z, Mayer, J.W

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Scaled CMOS technologies with low sheet resistance at 0.06-μm gate lengths von Kittl, J.A., Hong, Q.Z., Rodder, M., Breedijk, T.

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Thermal stability of silicide on polycrystalline Si von HONG, Q. Z, HONG, S. Q, D'HEURLE, F. M, HARPER, J. M. E

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Materials aspects of Ti and Co silicidation of narrow polysilicon lines von Kittl, J.A., Hong, Q.Z.

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Advanced salicides for 0.10 μm CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2 von Kittl, J.A., Hong, Q.Z., Yang, H., Yu, N., Samavedam, S.B., Gribelyuk, M.A.

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Thermal stability of Al/barrier/TiSi x multilayer structures von Lu, J.P, Hsu, W.Y, Hong, Q.Z, Dixit, G.A, Luttmer, J.D, Havemann, R.H, Chen, P.J, Tsai, H.L, Magel, L.K

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SOLID-PHASE EPITAXY OF STRESSED AND STRESS-RELAXED GE-SI ALLOYS von HONG, QZ, ZHU, JG, MAYER, JW, XIA, W, LAU, SS

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A novel process for fabricating conformal and stable TiN-based barrier films von LU, J. P, HSU, W. Y, HONG, Q. Z, DIXIT, G. A, LUTTMER, J. D, HAVEMANN, R. H, MAGEL, L. K

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Thermal stability of Al/barrier/TiSix multilayer structures von LU, J. P, HSU, W. Y, HONG, Q. Z, DIXIT, G. A, LUTTMER, J. D, HAVEMANN, R. H, CHEN, P. J, TSAI, H. L, MAGEL, L. K

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Thermal and ion induced silicide formation von Hung, L.S., Hong, Q.Z., Mayer, J.W.

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Thermally and ion-induced phase formation in a Pd/Ge bilayer von Li, Jian, Hong, Q. Z., Mayer, J. W.

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Ion mixing in amorphous and crystalline Si/Ge layered structures von Jian, Li, Hong, Q.Z., Vizkelethy, G., Mayer, J.W., Cozzolino, C., Xia, W., Zhu, B., Hsu, S.N., Lau, S.S., Holländer, B., Butz, R., Mantl, S.

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Ion mixing of near-noble monosilicides with Si substrates von HONG, Q. Z, HUNG, L. S, MAYER, J. W

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Thermally and ion-induced reaction between Si and binary metallic alloys von HUNG, L. S, HONG, Q. Z, MAYER, J. W

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A 65 nm CMOS technology for mobile and digital signal processing applications von Chatterjee, A., Yoon, J., Zhao, S., Tang, S., Sadra, K., Crank, S., Mogul, H., Aggarwal, R., Chatterjee, B., Lytle, S., Lin, C.T., Lee, K.D., Kim, J., Hong, Q.Z., Kim, T., Olsen, L., Quevedo-Lopez, M., Kirmse, K., Zhang, G., Meek, C., Aldrich, D., Mair, H., Mehrotra, M., Adam, L., Mosher, D., Yang, J.Y., Crenshaw, D., Williams, B., Jacobs, J., Jain, M., Rosal, J., Houston, T., Wu, J., Nagaraj, N.S., Scott, D., Ashburn, S., Tsao, A.

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Study Of Integration Issues Of Ti Salicide Process With Preamorphization For Sub-0.18 /spl mu/m Gate Length CMOS Technologies von Kittl, J.A., Chatterjee, A., Chen, I.-C., Dixit, G.A., Apte, P.P., Prinslow, D.A., Hong, Q.Z.

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