Total ionizing dose radiation hardening technology based on double-charge multiple-step ion implantation von Jianwei, Wu, Zongguang, Yu, Genshen, Hong, Zhiqiang, Xiao, Jing, Luo

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High-dose X-ray radiation induced MgO degradation and breakdown in spin transfer torque magnetic tunnel junctions von He, Qi, Shi, Hui, Wang, Yinquan, Cao, Lichao, Gu, Xiang, Wu, Jianwei, Hong, Genshen, Li, Minghua

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Design of GGNMOS ESD protection device for radiation-hardened 0.18 μm CMOS process von Wu, Jianwei, Yu, Zongguang, Hong, Genshen, Xie, Rubin

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Reliability evaluation on sense-switch p-channel flash von Song, Side, Liu, Guozhu, Zhang, Hailiang, Chao, Lichao, Wei, Jinghe, Zhao, Wei, Hong, Genshen, He, Qi

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The effect of oxide scaling on ionising radiation response of sense-switch flash cells von Shi, Hui, Wang, Yinquan, Cao, Lichao, Hong, Genshen, Zheng, Ruocheng, Xu, Hejun, Wang, Yi, Xie, Rubin

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A radiation-hardened Sense-Switch pFLASH cell for FPGA von Liu, Guozhu, Li, Bing, Wei, Jinghe, Hong, Genshen, Yu, Zongguang, Wang, Haibin

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Research for radiation-hardened high-voltage SOI LDMOS von Li, Yanfei, Zhu, Shaoli, Wu, Jianwei, Hong, Genshen, Xu, Zheng

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High Quality of Ultra-Thin SiO x N y Films Prepared in Nitrous Oxide Ambients Using Thermal Low-Pressure Oxynitridation von Liu, GuoZhu, Hong, GenShen, Zheng, RuoCheng, Wu, XiaoDong, Yang, WenJun

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Radiation hardened 256K CMOS SOI SRAM von Zhao Kai, Gao Jiantou, Liu Zhongli, Yu Fang, Li Ning, Yang Bo, Wang Ningjuan, Xiao Zhiqiang, Hong Genshen

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Radiation Hardened 128K PDSOI CMOS Static RAM von Zhao Kai, Liu Zhongli, Yu Fang, Xiao Zhiqiang, Hong Genshen

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High-voltage anti-radiation reinforced ESD device structure von XIE RUBIN, LI YANFEI, HONG GENSHEN

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High-reliability floating gate device based on laminated silicon nanocrystals and manufacturing method von ZHAI PEIZHUO, WANG YINQUAN, WEI RUN, HONG GENSHEN, ZHENG RUOCHENG

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Method for manufacturing anti-SEB power VDMOS von LIAO YUANBAO, XU ZHENG, HONG GENSHEN

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Total dose radiation hardening characteristic characterization device von XIE RUBIN, LI YANFEI, HONG GENSHEN

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Manufacturing method of VDMOS terminal structure resistant to total dose irradiation von WU SUZHEN, XU ZHENG, HONG GENSHEN

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Preparation method of VDMOS (Vertical Double-diffused Metal Oxide Semiconductor) device field region structure capable of resisting single-particle burnout von WU SUZHEN, XU ZHENG, HONG GENSHEN

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Method for improving radiation resistance of floating gate memory device von SHI HUI, XIE RUBIN, ZHANG QINGDONG, WANG YINQUAN, CAO LICHAO, HONG GENSHEN, ZHENG RUOCHENG

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Hysteresis-effect-free anti-radiation high-voltage GGNMOS device and preparation method thereof von XIE RUBIN, LI YANFEI, WANG YU, HONG GENSHEN

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Radiation-resistant reinforced semiconductor device structure von XIE RUBIN, LI YANFEI, SUN JIALIN, HONG GENSHEN, DING BING

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Manufacturing method of VDMOS device with high current uniformity von XU HAIMING, TANG XINYU, XIE RUBIN, ZHANG QINGDONG, LIAO YUANBAO, HONG GENSHEN

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