Graphene Flash Memory von Hong, Augustin J, Song, Emil B, Yu, Hyung Suk, Allen, Matthew J, Kim, Jiyoung, Fowler, Jesse D, Wassei, Jonathan K, Park, Youngju, Wang, Yong, Zou, Jin, Kaner, Richard B, Weiller, Bruce H, Wang, Kang L

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Metal Nanodot Memory by Self-Assembled Block Copolymer Lift-Off von Hong, Augustin J, Liu, Chi-Chun, Wang, Yong, Kim, Jiyoung, Xiu, Faxian, Ji, Shengxiang, Zou, Jin, Nealey, Paul F, Wang, Kang L

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Three-Dimensional a-Si:H Solar Cells on Glass Nanocone Arrays Patterned by Self-Assembled Sn Nanospheres von Kim, Jeehwan, Hong, Augustin J, Nah, Jae-Woong, Shin, Byungha, Ross, Frances M, Sadana, Devendra K

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A stacked memory device on logic 3D technology for ultra-high-density data storage von Kim, Jiyoung, Hong, Augustin J, Kim, Sung Min, Shin, Kyeong-Sik, Song, Emil B, Hwang, Yongha, Xiu, Faxian, Galatsis, Kosmas, Chui, Chi On, Candler, Rob N, Choi, Siyoung, Moon, Joo-Tae, Wang, Kang L

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9.4% Efficient Amorphous Silicon Solar Cell on High Aspect-Ratio Glass Microcones von Kim, Jeehwan, Battaglia, Corsin, Charrière, Mathieu, Hong, Augustin, Jung, Wooshik, Park, Hongsik, Ballif, Christophe, Sadana, Devendra

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Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors von Tang, Jianshi, Wang, Chiu-Yen, Xiu, Faxian, Hong, Augustin J, Chen, Shengyu, Wang, Minsheng, Zeng, Caifu, Yang, Hong-Jie, Tuan, Hsing-Yu, Tsai, Cho-Jen, Chen, Lih Juann, Wang, Kang L

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Porous Silicon Resonators for Improved Vapor Detection von Yongha Hwang, Feng Gao, Hong, A. J., Candler, R. N.

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Engineering of Contact Resistance between Transparent Single-Walled Carbon Nanotube Films and a-Si:H Single Junction Solar Cells by Gold Nanodots von Kim, Jeehwan, Hong, Augustin J., Chandra, Bhupesh, Tulevski, George S., Sadana, Devendra K.

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Cr metal thin film memory von Hong, Augustin J., Kim, Jiyoung, Kim, Kyoungwhan, Wang, Yong, Xiu, Faxian, Jeon, Jaeseok, Park, Jemin, Rauda, Iris, Chen, Li-Min, Yang, Yang, Tolbert, Sarah, Zou, Jin, Wang, Kang L.

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Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots von Xiu, Faxian, Wang, Yong, Kim, Jiyoung, Hong, Augustin, Tang, Jianshi, Jacob, Ajey P., Zou, Jin, Wang, Kang L.

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Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p + a-SiC:H/transparent conducting oxide interface von Kim, Jeehwan, Abou-Kandil, Ahmed I., Hong, Augustin J., Saad, Mohamed M., Sadana, Devendra K., Chen, Tze-Chiang

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Novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high-density and cost-effective NAND Flash memory devices and SSD (Solid State Drive) von Jiyoung Kim, Hong, A.J., Sung Min Kim, Song, E.B., Jeung Hun Park, Jeonghee Han, Siyoung Choi, Deahyun Jang, Joo -Tae Moon, Wang, K.L.

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Room temperature Si δ-growth on Ge incorporating high-K dielectric for metal oxide semiconductor applications von Hong, Augustin J., Ogawa, Masaaki, Wang, Kang L., Wang, Yong, Zou, Jin, Xu, Zheng, Yang, Yang

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Electric-field-controlled ferromagnetism in high-Curie-temperature Mn sub(0.05)Ge sub(0.95) quantumdots von Xiu, Faxian, Wang, Yong, Kim, Jiyoung, Hong, Augustin, Tang, Jianshi, Jacob, Ajey P, Zou, Jin, Wang, Kang L

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Electric-field-controlled ferromagnetism in high-Curie-temperature Mn 0.05 Ge 0.95 quantum dots von Wang, Kang L, Xiu, Faxian, Wang, Yong, Kim, Jiyoung, Hong, Augustin, Tang, Jianshi, Jacob, Ajey P, Zou, Jin

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Room temperature Si {delta}-growth on Ge incorporating high-K dielectric for metal oxide semiconductor applications von Hong, Augustin J., Ogawa, Masaaki, Wang, Kang L., Wang Yong, Zou Jin, Xu Zheng, Yang Yang

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Room temperature Si δ -growth on Ge incorporating high- K dielectricfor metal oxide semiconductor applications von Hong, Augustin J., Ogawa, Masaaki, Wang, Kang L., Wang, Yong, Zou, Jin, Xu, Zheng, Yang, Yang

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Single-crystalline Ni 2 Ge/Ge/Ni 2 Ge nanowire heterostructure transistors von Tang, Jianshi, Wang, Chiu-Yen, Xiu, Faxian, Hong, Augustin J, Chen, Shengyu, Wang, Minsheng, Zeng, Caifu, Yang, Hong-Jie, Tuan, Hsing-Yu, Tsai, Cho-Jen, Chen, Lih Juann, Wang, Kang L

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Novel 3-D structure for ultra high density flash memory with VRAT (Vertical-Recess-Array-Transistor) and PIPE (Planarized Integration on the same PlanE) von Jiyoung Kim, Hong, A.J., Ogawa, M., Siguang Ma, Song, E.B., You-Sheng Lin, Jeonghee Han, U-In Chung, Wang, K.L.

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COST-EFFICIENT HIGH POWER PECVD DEPOSITION FOR SOLAR CELLS von CHEN, TZEIANG, HONG, AUGUSTIN J, KIM, JEEHWAN, SADANA, DEVENDRA K

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