Displacement measurement that uses transient photoelectromotive force effects in CdTe:V with frequency-modulated lasers von Jin, F, Khurgin, J B, Wang, C C, Trivedi, S, Gabay, Y, Gad, E, Temple, D A, Hommerich, U H

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Chemical and explosive detection with long-wave infrared laser induced breakdown spectroscopy von Jin, F, Trivedi, SB, Yang, CS, Brown, EE, Kumi-Barimah, E, Hommerich, UH, Samuels, AC

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Displacement measurement with submicron resolution using photo-electromotive force effect and frequency-modulated lasers von Jin, F., Khurgin, J.B., Wang, C.-C., Trivedi, S., Gabay, Y., Gad, E., Temple, D.A.

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Crystal growth and characterization of undoped and Dy-doped TlPb2Br5 for infrared lasers and nuclear radiation detection von Hömmerich, U., Brown, E., Kabir, A., Hart, D., Trivedi, S.B., Jin, F., Chen, H.

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Recent Progress in the Development of Neodymium-Doped Ceramic Yttria von Prasad, N.S., Edwards, W.C., Trivedi, S.B., Kutcher, S.W., Chen-Chia Wang, Joo-Soo Kim, Hommerich, U., Shukla, V., Sadangi, R., Kear, B.H.

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Photoluminescence in erbium doped amorphous silicon oxycarbide thin films von Gallis, Spyros, Huang, Mengbing, Efstathiadis, Harry, Eisenbraun, Eric, Kaloyeros, Alain E., Nyein, Ei Ei, Hommerich, Uwe

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Spectroscopic characterization of Praseodymium doped Gallium Nitride powder prepared by a Na flux method von Brown, E., Hömmerich, U., Yamada, T., Yamane, H., Zavada, J.M.

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Ultraviolet photoluminescence from Gd-implanted AlN epilayers von Zavada, J. M., Nepal, N., Lin, J. Y., Jiang, H. X., Brown, E., Hömmerich, U., Hite, J., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Gwilliam, R.

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Crystal growth and characterization of undoped and Dy-doped TlPb^sub 2^Br^sub 5^ for infrared lasers and nuclear radiation detection von Hömmerich, U, Brown, E, Kabir, A, Hart, D, Trivedi, SB, Jin, F, Chen, H

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Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films von Gallis, Spyros, Efstathiadis, Harry, Huang, Mengbing, Nyein, Ei Ei, Hommerich, Uwe, Kaloyeros, Alain E.

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Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition von Zavada, J. M., Nepal, N., Ugolini, C., Lin, J. Y., Jiang, H. X., Davies, R., Hite, J., Abernathy, C. R., Pearton, S. J., Brown, E. E., Hömmerich, U.

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Mid-infrared laser development based on transition metal doped cadmium manganese telluride von Hömmerich, U, Seo, J.T, Bluiett, A, Turner, M, Temple, D, Trivedi, S.B, Zong, H, Kutcher, S.W, Wang, C.C, Chen, R.J, Schumm, Bryce

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Synthesis and optical characterization of erbium-doped III-N double heterostructures von Zavada, J.M., Lin, J.Y., Jiang, H.X., Chow, P., Hertog, B., Hömmerich, U., Nyein, Ei Ei, Jenkinson, H.A.

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Annealing behavior of luminescence from erbium-implanted GaN films von Zavada, J.M., Ellis, C.J., Lin, J.Y., Jiang, H.X., Seo, J.T., Hömmerich, U., Thaik, M., Wilson, R.G., Grudowski, P.A., Dupuis, R.D.

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Compositional changes in erbium-implanted GaN films due to annealing von ZAVADA, J. M, WILSON, R. G, HOMMERICH, U, THAIK, M, SEO, J. T, ELLIS, C. J, LIN, J. Y, JIANG, H. X

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Near infrared emission at 1.35 μm in Cr doped glass von Ho¨mmerich, U., Eilers, H., Yen, W.M., Hayden, J.S., Aston, M.K.

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Refractive index changes in Ti sup 3 sup +-doped glass von Eilers, H, Hommerich, U, Jaffe, S, Yen, W M

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Mid-Infrared Lasing from a Novel Optical Material: Chromium-Doped Cd0.55Mn0.45Te von Seo, J. T., Hömmerich, U., Zong, H., Trivedi, S. B., Kutcher, S. W., Wang, C. C., Chen, R. J.

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Origin of the NIR emission in Cr-doped forsterite, Y3Al5O12 and Y2SiO5 von Jia, Weiyi, Liu, Huimin, Wang, Yanyun, Ho¨mmerich, U., Eilers, H., Hoffman, K.R., Yen, W.M.

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Effects of uniaxial stress on the metastable level in Cr super(4+):Y sub(2)SiO sub(5) von Hommerich, U, Eilers, H, Yen, W M, Jia, W, Wang, Y

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