An empirical expression for K-shell ionization cross section by electron impact von Hombourger, C

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Accurate EPMA Quantification of the First Series Transition Metals using Ll Lines von Moret, M., Hombourger, C., Outrequin, M.

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Correlative Compositional Analysis of Fiber-Optic Nanoparticles von Francois-Saint-Cyr, H., Martin, I., Blanc, W., LeCoustumer, P., Hombourger, C., Neuville, D., Larson, D. J., Prosa, T. J., Guillermier, C.

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Thickness determination of very thin SiO2 films on Si by electron-induced x-ray emission spectroscopy von Hombourger, C., Jonnard, P., Filatova, E. O., Lukyanov, V.

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LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structures von Hombourger, C., Staub, P.F., Schuhmacher, M., Desse, F., de Chambost, E., Hitzman, C.

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Correlative Compositional Analysis of Fiber-Optic Nanoparticles von Francois-Saint-Cyr, H, Martin, I, Blanc, W, Le Coustumer, Philippe, Hombourger, C, Neuville, D, Larson, D.J., Prosa, T.J., Guillermier, C

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Study of the adhesion between a-CH films and TA6V substrates by electron-induced X-ray emission spectroscopy (EXES) von Jonnard, P., Tixier, C., Desmaison, J., Hombourger, C., Bonnelle, C.

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Use of layered synthetic microstructures for the quantitative x-ray analysis of light elements von Hombourger, C., Jonnard, P., André, J. -M., Chauvineau, J. -P.

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Temperature‐dependent sample holder for x‐ray spectrometer von Jonnard, P., Chargelègue, P., Hombourger, C., Thirion, J., Vergand, F.

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Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy von Ehrke, H.-U., Loibl, N., Moret, M. P., Horréard, F., Choi, J., Hombourger, C., Paret, V., Benbalagh, R., Morel, N., Schuhmacher, M.

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Valence states of MgO, Al2O3 and metal-oxide interfaces von JONNARD, P, HOMBOURGER, C, VERGAND, F, BONNELLE, C

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Effect of high carbon dioxide storage and gamma irradiation on membrane deterioration in cauliflower florets von Voisine, R., Hombourger, C., Willemot, C., Castaigne, F., Makhlouf, J.

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Dopant Dose Metrology for Ultra-Shallow Implanted Wafers using Electron-Induced X-Ray Spectrometry at Pattern-Size Scale von Staub, Pierre-F., Hombourger, Chrystel

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Depth profiling of P shallow implants in silicon by electron-induced X-ray emission spectroscopy von HOMBOURGER, Ch, JONNARD, Ph, BONNELLE, Ch, STAUB, P.-F

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Quantitative determination of dopant dose in shallow implants using the low energy x-ray emission spectroscopy technique von Staub, P.-F., Hombourger, C., Schuhmacher, M.

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LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structures von HOMBOURGER, C, STAUB, P. F, SCHUHMACHER, M, DESSE, F, DE CHAMBOST, E, HITZMAN, C

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Valence States of MgO, AI2O3 and Metal-Oxide Interfaces von Jonnard, P., Hombourger, C., Bonnelle, C., Vergand, F.

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Effect of high dioxide storage and gamma irradiation on membrane deterioration in cauliflower florets von VOISINE, R, HOMBOURGER, C, WILLEMOT, C, CASTAIGNE, F, MAKHLOUF, J

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High accuracy and rapid dose measurements for ultra-low energy ion implantation using low energy x-ray emission spectroscopy von Corcoran, S.F., Hombourger, C., Staub, P., Schuhmacher, M.

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Comparison of indium metrology using LEXES and SIMS [semiconductor doping] von Kouzminov, D., Yupu Li, Hunter, J., Graoui, H., Al-Bayati, A., Foad, M., Staub, P., Hombourger, C., Schuhmacher, M.

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