Power and Energy Perspectives of Nonvolatile Memory Technologies von Derhacobian, Narbeh, Hollmer, Shane C., Gilbert, Nad, Kozicki, Michael N.

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One-dimensional model of the programming kinetics of conductive-bridge memory cells von Jameson, John R., Gilbert, Nad, Koushan, Foroozan, Saenz, Juan, Wang, Janet, Hollmer, Shane, Kozicki, Michael N.

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Quantized Conductance in \hbox/\hbox Conductive-Bridge Memory Cells von Jameson, J. R., Gilbert, N., Koushan, F., Saenz, J., Wang, J., Hollmer, S., Kozicki, M., Derhacobian, N.

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Quantized Conductance in Ag/GeS2/W Conductive-Bridge Memory Cells von JAMESON, John R, GILBERT, Nad, KOUSHAN, Foroozan, SAENZ, Juan, WANG, Janet, HOLLMER, Shane, KOZICKI, Michael, DERHACOBIAN, Narbeh

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Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells von Jameson, John R., Gilbert, Nad, Koushan, Foroozan, Saenz, Juan, Wang, Janet, Hollmer, Shane, Kozicki, Michael

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(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow von Jameson, John R., Blanchard, Philippe, Dinh, John, Gonzales, Nathan, Gopalakrishnan, Vasudevan, Guichet, Berenice, Hollmer, Shane, Hsu, Sue, Intrater, Gideon, Kamalanathan, Deepak, Kim, David, Koushan, Foroozan, Kwan, Ming, Lewis, Derric, Pedersen, Bård, Ramsbey, Mark, Runnion, Ed, Shields, Jeffrey, Tsai, Kevin, Tysdal, Aaron, Wang, Daniel, Gopinath, Venkatesh

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Power and Energy Perspectives of Nonvolatile Memory Technologies : CIRCUIT TECHNOLOGY FOR ULTRA-LOW POWER (ULP) von DERHACOBIAN, Narbeh, HOLLMER, Shane C, GILBERT, Nad, KOZICKI, Michael N

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Quantized Conductance in [Formula Omitted] Conductive-Bridge Memory Cells von Jameson, John R, Gilbert, Nad, Koushan, oozan, Saenz, Juan, Wang, Janet, Hollmer, Shane, Kozicki, Michael, Derhacobian, Narbeh

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Quantized Conductance in hbox Ag / GeS 2 / hbox W Conductive-Bridge Memory Cells von Jameson, John R, Gilbert, Nad, Koushan, oozan, Saenz, Juan, Wang, Janet, Hollmer, Shane, Kozicki, Michael, Derhacobian, Narbeh

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MEMORY DEVICE WITH ADAPTIVE NOISE AND VOLTAGE SUPPRESSION DURING READ-WHILE-WRITE OPERATIONS von Hollmer, Shane, Dinh, John

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Demonstration of Conductive Bridging Random Access Memory (CBRAM) in Logic CMOS Process von Gopalan, C, Yi Ma, Gallo, T, Wang, J, Runnion, E, Saenz, J, Koushan, F, Hollmer, S

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Methods of operating integrated circuit devices having volatile and nonvolatile memory portions von Derhacobian, Narbeh, Hollmer, Shane Charles

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Nonvolatile memory devices, systems and methods with switching charge pump architectures von Hao, Duong Vinh, Hieu, Nguyen Khac, Dinh, John, Trinh, Stephen, Hartono, Hendrik, Hollmer, Shane Charles

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Verify pulse delay to improve resistance window von CHENG CHUANDING, HOLLMER SHANE

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Verify pulse delay to improve resistance window von CHENG CHUANDING, HOLLMER SHANE

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CONCURRENT READ AND RECONFIGURED WRITE OPERATIONS IN A MEMORY DEVICE von Hollmer, Shane, Lewis, Derric, Trinh, Stephen, Intrater, Gideon, Pedersen, Bard

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Concurrent read and reconfigured write operations in a memory device von Hollmer, Shane, Lewis, Derric, Trinh, Stephen, Intrater, Gideon, Pedersen, Bard

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Nonvolatile memory devices, systems and methods with switching charge pump architectures von Hao, Duong Vinh, Hieu, Nguyen Khac, Dinh, John, Trinh, Stephen, Hartono, Hendrik, Hollmer, Shane Charles

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Memory devices and methods for storing single data value in multiple programmable resistance elements von Hollmer Shane Charles, Gilbert Nad Edward

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CONCURRENT READ AND WRITE OPERATIONS IN A SERIAL FLASH DEVICE von Hollmer, Shane, Lewis, Derric, Trinh, Stephen, Intrater, Gideon, Pedersen, Bard

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