Development of a bright MeV photon source with compound parabolic concentrator targets on the National Ignition Facility Advanced Radiographic Capability (NIF-ARC) laser von Kerr, S. M., Rusby, D., Williams, G. J., Meaney, K., Schlossberg, D. J., Aghedo, A., Alessi, D., Ayers, J., Azhar, S., Aufderheide, M. B., Bowers, M. W., Bude, J. D., Chen, H., Cochran, G., Crane, J., Nicola, J. M. Di, Fittinghoff, D. N., Fitzsimmons, P., Geppert-Kleinrath, H., Golick, B., Grim, G. P., Haid, A., Hamamoto, M., Heredia, R., Hermann, M., Herriot, S., Hill, M. P., Hoke, W., Kalantar, D., Kemp, A., Kim, Y., LaFortune, K., Lemos, N., Link, A., Lowe-Webb, R., MacPhee, A., Manuel, M., Martinez, D., Mauldin, M., Patankar, S., Pelz, L., Prantil, M. A., Quinn, M., Siders, C. W., Vonhof, S., Wegner, P., Wilks, S., Williams, W., Youngblood, K., Mackinnon, A. J.

Volltext

Monolithic integration of InP-based transistors on Si substrates using MBE von Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.

Volltext

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit von Hoke, W. E., Chelakara, R. V., Bettencourt, J. P., Kazior, T. E., LaRoche, J. R., Kennedy, T. D., Mosca, J. J., Torabi, A., Kerr, A. J., Lee, H.-S., Palacios, T.

Volltext

Distinction in EEG slow oscillations between chronic mild traumatic brain injury and PTSD von Franke, Laura M., Walker, William C., Hoke, Kathy W., Wares, Joanna R.

Volltext

Lawson Criterion for Ignition Exceeded in an Inertial Fusion Experiment von Abu-Shawareb, H., Acree, R., Adams, P., Adams, J., Addis, B., Aden, R., Adrian, P., Afeyan, B. B., Aggleton, M., Aghaian, L., Aguirre, A., Aikens, D., Akre, J., Albert, F., Albrecht, M., Albright, B. J., Albritton, J., Alcala, J., Alday, C., Alessi, D. A., Alexander, N., Alfonso, J., Alfonso, N., Alger, E., Ali, S. J., Ali, Z. A., Alley, W. E., Amala, P., Amendt, P. A., Amick, P., Ammula, S., Amorin, C., Ampleford, D. J., Anderson, R. W., Anklam, T., Antipa, N., Appelbe, B., Aracne-Ruddle, C., Araya, E., Arend, M., Arnold, P., Arnold, T., Asay, J., Atherton, L. J., Atkinson, D., Atkinson, R., Auerbach, J. M., Austin, B., Auyang, L., Awwal, A. S., Ayers, J., Ayers, S., Ayers, T., Azevedo, S., Bachmann, B., Back, C. A., Bae, J., Bailey, D. S., Bailey, J., Baisden, T., Baker, K. L., Baldis, H., Barber, D., Barberis, M., Barker, D., Barnes, A., Barnes, C. W., Barrios, M. A., Barty, C., Bass, I., Batha, S. H., Baxamusa, S. H., Bazan, G., Beagle, J. K., Beale, R., Beck, B. R., Beck, J. B., Bedzyk, M., Beeler, R. G., Behrendt, W., Belk, L., Bell, P., Belyaev, M., Benage, J. F., Bennett, G., Benedetti, L. R., Benedict, L. X., Berger, R., Bernat, T., Bernstein, L. A., Berry, B., Bertolini, L., Besenbruch, G., Betcher, J., Bettenhausen, R., Betti, R., Bezzerides, B., Bhandarkar, S. D., Bickel, R., Biener, J.

Volltext

(Invited) Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate von Kazior, Thomas E., LaRoche, J., Hoke, W.

Volltext

High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate von Kazior, T. E., Chelakara, R., Hoke, W., Bettencourt, J., Palacios, T., Lee, H. S.

Volltext

Achievement of Target Gain Larger than Unity in an Inertial Fusion Experiment von Abu-Shawareb, H, Acree, R, Adams, P, Adams, J, Addis, B, Aden, R, Adrian, P, Afeyan, B B, Aggleton, M, Aghaian, L, Aguirre, A, Aikens, D, Akre, J, Albert, F, Albrecht, M, Albright, B J, Albritton, J, Alcala, J, Alday, C, Alessi, D A, Alexander, N, Alfonso, J, Alfonso, N, Alger, E, Ali, S J, Ali, Z A, Allen, A, Alley, W E, Amala, P, Amendt, P A, Amick, P, Ammula, S, Amorin, C, Ampleford, D J, Anderson, R W, Anklam, T, Antipa, N, Appelbe, B, Aracne-Ruddle, C, Araya, E, Archuleta, T N, Arend, M, Arnold, P, Arnold, T, Arsenlis, A, Asay, J, Atherton, L J, Atkinson, D, Atkinson, R, Auerbach, J M, Austin, B, Auyang, L, Awwal, A A S, Aybar, N, Ayers, J, Ayers, S, Ayers, T, Azevedo, S, Bachmann, B, Back, C A, Bae, J, Bailey, D S, Bailey, J, Baisden, T, Baker, K L, Baldis, H, Barber, D, Barberis, M, Barker, D, Barnes, A, Barnes, C W, Barrios, M A, Barty, C, Bass, I, Batha, S H, Baxamusa, S H, Bazan, G, Beagle, J K, Beale, R, Beck, B R, Beck, J B, Bedzyk, M, Beeler, R G, Behrendt, W, Belk, L, Bell, P, Belyaev, M, Benage, J F, Bennett, G, Benedetti, L R, Benedict, L X, Berger, R L, Bernat, T, Bernstein, L A, Berry, B, Bertolini, L, Besenbruch, G, Betcher, J, Bettenhausen, R

Volltext

High indium metamorphic HEMT on a GaAs substrate von Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Xu, C., Hsieh, K.C.

Volltext

Effects of hyperbaric oxygen on eye tracking abnormalities in males after mild traumatic brain injury von Cifu, David X, Hoke, Kathy W, Wetzel, Paul A, Wares, Joanna R, Gitchel, George, Carne, William

Volltext

AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy von Hoke, W. E., Kennedy, T. D., Mosca, J. J., Kerr, A. J., Torabi, A., Davis-Hearns, S., LaRoche, J. R.

Volltext

Characterizing effects of mild traumatic brain injury and posttraumatic stress disorder on balance impairments in blast-exposed servicemembers and Veterans using computerized postu... von Wares, Joanna R, Hoke, Kathy W, Walker, William, Franke, Laura Manning, Cifu, David X, Carne, William, Ford-Smith, Cheryl

Volltext

Properties of metamorphic materials and device structures on GaAs substrates von Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Lardizabal, S.M., Zhang, Y., Jang, J.H., Adesida, I., Xu, C., Hsieh, K.C.

Volltext

Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions von Hoke, W. E., Torabi, A., Mosca, J. J., Kennedy, T. D.

Volltext

Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates von Hoke, W. E., Lemonias, P. J., Mosca, J. J., Lyman, P. S., Torabi, A., Marsh, P. F., McTaggart, R. A., Lardizabal, S. M., Hetzler, K.

Volltext

Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN∕GaN∕AlN transistor structures von Hoke, W. E., Torabi, A., Mosca, J. J., Hallock, R. B., Kennedy, T. D.

Volltext

40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology von Zhang, Y., Whelan, C.S., Leoni, R., Marsh, P.F., Hoke, W.E., Hunt, J.B., Laighton, C.M., Kazior, T.E.

Volltext

Simultaneous determination of Poisson ratio, bulk lattice constant, and composition of ternary compounds: In0.3Ga0.7As, In0.3Al0.7As, In0.7Ga0.3P, and In0.7Al0.3P von Hoke, W. E., Kennedy, T. D., Torabi, A.

Volltext

Surface and interface characterization of GaN/AlGaN high electron mobility transistor structures by x-ray and atomic force microscopy von Torabi, A., Ericson, P., Yarranton, E. J., Hoke, W. E.

Volltext

Development of a bright MeV photon source with compound parabolic concentrator targets on the National Ignition Facility Advanced Radiographic Capability (NIF-ARC) laser von Kerr, S. M., Rusby, D., Williams, G. J., Meaney, K., Schlossberg, D. J., Aghedo, A., Alessi, D., Ayers, J., Azhar, S., Aufderheide, M. B., Bowers, M. W., Bude, J. D., Chen, H., Cochran, G., Crane, J., Nicola, J. Di, Fittinghoff, D. N., Fitzsimmons, P., Geppert-Kleinrath, H., Golick, B., Grim, G. P., Haid, A., Hamamoto, M., Heredia, R., Hermann, M., Herriot, S., Hill, M. P., Hoke, W., Kalantar, D., Kemp, A., Kim, Y., LaFortune, K., Lemos, N., Link, A., Lowe-Webb, R., MacPhee, A., Manuel, M., Martinez, D., Mauldin, M., Patankar, S., Pelz, L., Prantil, M. A., Quinn, M., Siders, C. W., Vonhof, S., Wegner, P., Wilks, S., Williams, W., Youngblood, K., Mackinnon, A. J.

Volltext