Atomic steps on a silicon (001) surface tilted toward an arbitrary direction von Zhong, Lei, Hojo, Akimichi, Aiba, Yoshiro, Chaki, Katuhiro, Yoshikawa, Jun, Hayashi, Kenro

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Oxygen precipitation in Czochralski-grown silicon wafers during hydrogen annealing von Izunome, Koji, Shirai, Hiroshi, Kashima, Kazuhiko, Yoshikawa, Jun, Hojo, Akimichi

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Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling technique von WATANABE, M. O, YOSHIDA, J, MASHITA, M, NAKASANI, T, HOJO, A

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Au-Ge ohmic contact to n-GaAs by IR lamp alloying von YASUAMI, S, SAITO, Y, HOJO, A

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Lattice bending in LEC-grown semi-insulating GaAs wafers von YASUAMI, S, MIKAMI, H, HOJO, A

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Evidence of spontaneous formation of steps on silicon (100) von Zhong, L, Hojo, A, Matsushita, Y, Aiba, Y, Hayashi, K, Takeda, R, Shirai, H, Saito, H, Matsushita, J, Yoshikawa, J

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A 1K-gate GaAs gate array von Ikawa, Y., Toyoda, N., Mochizuki, M., Terada, T., Kanazawa, K., Hirose, M., Mizoguchi, T., Hojo, A.

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500 Gates GaAs Gate Array von Toyoda, Nobuyuki, Terada, Toshiyuki, Mochizuki, Masao, Kanazawa, Katsue, Hojo, Akimichi

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Minority Carrier Diffusion Length in Si Ribbon Solar Cells von Ikawa, Yasuo, Hojo, Akimichi, Nakagawa, Masashi

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Epitaxial GaAs Hall Generators for High Temperature Applications von Hojo, Akimichi, Tanaka, Shikei, Kuru, Isamu

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Evaluation of Si Ribbon Crystals for Solar Cells von Hojo, Akimichi, Ikawa, Yasuo, Matsui, Toshiro, Nakagawa, Masashi

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JPH0358183B von HOJO AKIMICHI

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JPH0421371B von TOYODA NOBUYUKI, HOJO AKIMICHI

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JPH0347777B von IGAWA YASUO, HOJO AKIMICHI

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JPH0347778B von IGAWA YASUO, HOJO AKIMICHI

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JPH0347776B von IGAWA YASUO, HOJO AKIMICHI

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CRUCIBLE AND METHOD FOR PRODUCING POLYCRYSTAL SEMICONDUCTOR von NAKANISHI HIDEO, HOJO AKIMICHI, MIYAZAWA TAKESHI, WATANABE EIZO

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JPS6312391B von TOYODA NOBUYUKI, HOJO AKIMICHI

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AN INTEGRATED LOGIC CIRCUIT von TOYODA, NOBUYUKI, HOJO, AKIMICHI

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GAAS LOGIC INTEGRATED CIRCUIT von IGAWA YASUO, HOJO AKIMICHI

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