Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates von Tiezhong Ma, Campbell, S.A., Smith, R., Hoilien, N., Boyong He, Gladfelter, W.L., Hobbs, C., Buchanan, D., Taylor, C., Gribelyuk, M., Tiner, M., Coppel, M., Jang Jung Lee

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A new method for extracting EOT for leaky insulators von Chen, F, Hoilien, N.P, Campbell, S.A

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Combinatorial Chemical Vapor Deposition of Metal Dioxides Using Anhydrous Metal Nitrates von Smith, Ryan C, Hoilien, Noel, Roberts, Jeff, Campbell, Stephen A, Gladfelter, Wayne L

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Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(V) nitrate von SMITH, Ryan C, HOILIEN, Noel, TAYLOR, Charles J, TIEZHONG MA, CAMPBELL, Stephen A, ROBERTS, Jeffrey T, COPEL, Matthew, BUCHANAN, D. A, GRIBELYUK, Michael, GLADFELTER, Wayne L

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Chemical Vapor Deposition of Ti x Si 1– x O 2 Films: Precursor Chemistry Impacts Films Composition von Smith, R.C., Hoilien, N., Dykstra, C., Campbell, S.A., Roberts, J.T., Gladfelter, W.L.

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Chemical Vapor Deposition of TixSi1-xO2 Films: Precursor Chemistry Impacts Films Composition von Smith, R.C., Hoilien, N., Dykstra, C., Campbell, S.A., Roberts, J.T., Gladfelter, W.L.

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High permittivity gate insulators TiO/sub 2/ and ZrO/sub 2 von He, B., Hoilien, N., Smith, R., Ma, T., Taylor, C., St. Omer, I., Campbell, S.A., Gladfelter, W.L., Gribelyuk, M., Buchanan, D.

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