From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy von Klar, P. J., Grüning, H., Heimbrodt, W., Koch, J., Höhnsdorf, F., Stolz, W., Vicente, P. M. A., Camassel, J.

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Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers von HOFMANN, Martin R, GERHARDT, Nils, MOLONEY, Jerome V, O'REILLY, E. P, BORCHERT, Bernd, EGOROV, A. Y, RIECHERT, Henning, SCHNEIDER, Hans Christian, CHOW, Weng W, WAGNER, Anke M, ELLMERS, C, HÖHNSDORF, Falko, KOCH, Jörg, STOLZ, Wolfgang, KOCH, Stephan W, RÜHLE, Wolfgang W, HADER, J

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Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy) von Höhnsdorf, F., Koch, J., Agert, C., Stolz, W.

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Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime von Hofmann, M., Wagner, A., Ellmers, C., Schlichenmeier, C., Schäfer, S., Höhnsdorf, F., Koch, J., Stolz, W., Koch, S. W., Rühle, W. W., Hader, J., Moloney, J. V., O’Reilly, E. P., Borchert, B., Egorov, A. Yu, Riechert, H.

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Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime von Ellmers, C., Höhnsdorf, F., Koch, J., Agert, C., Leu, S., Karaiskaj, D., Hofmann, M., Stolz, W., Rühle, W. W.

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(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range von Wagner, A., Ellmers, C., Höhnsdorf, F., Koch, J., Agert, C., Leu, S., Hofmann, M., Stolz, W., Rühle, W. W.

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Optical Spectroscopic Studies of N‐Related Bands in Ga(N, As) von Grüning, H., Chen, L., Hartmann, Th, Klar, P. J., Heimbrodt, W., Höhnsdorf, F., Koch, J., Stolz, W.

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C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs von Leu, S, Höhnsdorf, F, Stolz, W, Becker, R, Salzmann, A, Greiling, A

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Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane von Leu, S, Protzmann, H, Höhnsdorf, F, Stolz, W, Steinkirchner, J, Hufgard, E

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Structural properties of (GaIn) (NAs)/GaAs MQW structures grown by MOVPE von Höhnsdorf, F, Koch, J, Hasse, A, Volz, K, Schaper, A, Stolz, W, Giannini, C, Tapfer, L

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Optical characterization of (GaIn)(NAs)/GaAs MQW structures von Koch, J, Hohnsdorf, F, Stolz, W

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Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors von Protzmann, H., Höhnsdorf, F., Spika, Z., Stolz, W., Göbel, E.O., Müller, M., Lorberth, J.

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TEM Investigations of (GaIn)(NAs)/GaAs Multi-Quantum Wells grown by MOVPE von Hasse, A., Volz, K., Schaper, A.K., Koch, J., Höhnsdorf, F., Stolz, W.

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Emission dynamics and optical gain of 1.3-micron (GaIn)(NAs)/GaAs lasers von Hofman, M, Gerhardt, N, Wagner, A M, Ellmers, C, Hohnsdorf, F, Koch, J, Stolz, W, Koch, S W, Ruehle, W W, Hader, J

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Emission Dynamics and Gain of (GaIn)(NAs)/GaAs Lasers von Wagner, A., Ellmers, C., Höhnsdorf, F., Koch, J., Leu, S., Stolz, W., Hofmann, M., Rühle, W.W.

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Emission dynamics and optical gain of 1.3-/spl mu/m (GaIn)(NAs)/GaAs lasers von Hofmann, M.R., Gerhardt, N., Wagner, A.M., Ellmers, C., Hohnsdorf, F., Koch, J., Stolz, W., Koch, S.W., Ruhle, W.W., Hader, J., Moloney, J.V., O'Reilly, E.P., Borchert, B., Egorov, A.Y., Riechert, H., Schneider, H.C., Chow, W.W.

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Emission dynamics and optical gain of 1.3-[mu]m (GaIn)(NAs)/GaAs lasers von Hofmann, M.R, Gerhardt, N, Wagner, A.M, Ellmers, C, Hohnsdorf, F, Koch, J, Stolz, W, Koch, S.W, Ruhle, W.W, Hader, J, Moloney, J.V, O'Reilly, E.P, Borchert, B, Egorov, A.Y, Riechert, H, Schneider, H.C, Chow, W.W

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Impact of substituting SiO sub(2) ILD by low k materials into AlCu RIE metallization von Weber, D, Hohnsdorf, F, Hausmann, A, Klipp, A, Stavreva, Z, Herrmann, J, Bauch, L, Junack, M, Neef, H, Nichterwitz, M, Finsterbusch, S, Liebmann, R, Kallis, N, Kieslich, A

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Emission dynamics and optical gain of 1.3-mum (GaIn)(NAs)/GaAs lasers von Hofmann, M R, Gerhardt, N, Wagner, A M, Ellmers, C, Hohnsdorf, F, Koch, J, Stolz, W, Koch, S W, Ruhle, W W, Hader, J, Moloney, J V, O' Reilly, E P, Borchert, B, Egorov, A Y, Riechert, H, Schneider, H C, Chow, W W

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Nitrogen-induced band formation in GaNxAs1−x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance von Klar, P. J., Vicente, P. M. A., Grüning, H., Heimbrodt, W., Koch, J., Höhnsdorf, F., Stolz, W., Camassel, J.

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