Photoinduced changes of surface order in coumarin side-chain polymer films used for liquid crystal photoalignment von Bergmann, G., Jackson, P. O., Hogg, J. H. C., Stirner, T., O'Neill, M., Duffy, W. L., Kelly, S. M., Clark, G. F.

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In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation von Barnett, S J, Keir, A M, Cullis, A G, Johnson, A D, Jefferson, J, Smith, G W, Martin, T, Whitehouse, C R, Lacey, G, Clark, G F, Tanner, B K, Spirkl, W, Lunn, B, Hogg, J C H, Ashu, P, Hagston, W E, Castelli, C M

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Dependence of the critical thickness on Si doping of InGaAs on GaAs von Tanner, B. K., Parbrook, P. J., Whitehouse, C. R., Keir, A. M., Johnson, A. D., Jones, J., Wallis, D., Smith, L. M., Lunn, B., Hogg, J. H. C.

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Observation of hardening during relaxation of InGaAs on GaAs von Tanner, B K, Parbrook, P J, Lunn, B, Hogg, J H C, Keir, A M, Johnson, A D

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Spectroscopic evidence for different laser gain mechanisms in optically pumped ZnCdS/ZnS quantum well structures von Chen, P., Nicholls, J. E., O’Neill, M., Stirner, T., Hogg, J. H. C., Lunn, B., Ashenford, D. E.

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In situ x-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs von Tanner, B K, Parbrook, P J, Whitehouse, C R, Keir, A M, Johnson, A D, Jones, J, Wallis, D, Smith, L M, Lunn, B, Hogg, J H C

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High resolution x-ray diffraction and scattering measurement of the interfacial structure of ZnTe/GaSb epilayers von Li, C. R., Tanner, B. K., Ashenford, D. E., Hogg, J. H. C., Lunn, B.

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Optically pumped stimulated emission in ZnS/ZnCdS multiple quantum-wells, MBE-grown on GaP von OZANYAN, K. B, NICHOLLS, J. E, MAY, L, HOGG, J. H. C, HAGSTON, W. E, LUNN, B, ASHENFORD, D. E

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The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates von Li, C R, Tanner, B K, Ashenford, D E, Hogg, J H C, Lunn, B

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Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction von Möck, P, Tanner, B K, Li, C R, Keir, A M, Johnson, A D, Lacey, G, Clark, G F, Lunn, B, Hogg, J C H

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Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells von Haywood, S. K., Lim, A. C. H., Gupta, R., Emery, S., Hogg, J. H. C., Hewer, V., Stavrinou, P. N., Hopkinson, M., Hill, G.

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NOVEL SIDE CHAIN LIQUID CRYSTAL POLYESTERS von Mehl, G. H., Lacey, D., Goodby, J. W., Wilson, P., Hogg, J. H. C.

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Effect of Si doping on the relaxation mechanism of InGaAs on GaAs von Parbrook, P. J., Tanner, B. K., Lunn, B., Hogg, J. H. C., Keir, A. M., Johnson, A. D.

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Structural and electrical non-uniformities in thin CdTe layers grown on InSb by MBE von Ashenford, D, Devine, P, Hogg, J H C, Lunn, B, Scott, C G

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X-Ray diffraction investigations of magnetron sputtered TiCN coatings von Schneider, J.M., Voevodin, A., Rebholz, C., Matthews, A., Hogg, J.H.C., Lewis, D.B., Ives, M.

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Excimer laser induced diffusion in magnetic semiconductor quantum wells von Howari, H., Sands, D., Nicholls, J. E., Hogg, J. H. C., Stirner, T., Hagston, W. E.

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Grazing incidence X-ray reflectivity of coumarin side-chain polymers used for liquid crystal photoalignment layers von Jackson, P.O., Bergmann, G., Hogg, J.H.C., O’Neill, M., Hindmarsh, P., Kelly, S.M., Clark, G.F.

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Double crystal x-ray diffraction simulations of diffusion in semiconductor microstructures von Fatah, J. M., Harrison, P., Stirner, T., Hogg, J. H. C., Hagston, W. E.

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A PIXE investigation of interdiffusion in Pb1-xSnxTe/PbTe von Al-Salhi, M S, Shaw, D, Bryant, F J, Hogg, J H C

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Tellurium Doping and Implantation of Zinc Sulphide von Abdel-Kader, A., Bryant, P. J., Hogg, J. H. C.

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