Achieving High Substitutional Incorporation in Mn-Doped Graphene von Villarreal, Renan, Zarkua, Zviadi, Kretschmer, Silvan, Hendriks, Vince, Hillen, Jonas, Tsai, Hung Chieh, Junge, Felix, Nissen, Matz, Saha, Tanusree, Achilli, Simona, Hofsäss, Hans C., Martins, Michael, De Ninno, Giovanni, Lacovig, Paolo, Lizzit, Silvano, Di Santo, Giovanni, Petaccia, Luca, De Feyter, Steven, De Gendt, Stefan, Brems, Steven, Van de Vondel, Joris, Krasheninnikov, Arkady V., Pereira, Lino M. C.

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Optical Properties of MoSe2 Monolayer Implanted with Ultra-Low-Energy Cr Ions von Bui, Minh N., Rost, Stefan, Auge, Manuel, Zhou, Lanqing, Friedrich, Christoph, Blügel, Stefan, Kretschmer, Silvan, Krasheninnikov, Arkady V., Watanabe, Kenji, Taniguchi, Takashi, Hofsäss, Hans C., Grützmacher, Detlev, Kardynał, Beata E.

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Optical Properties of MoSe 2 Monolayer Implanted with Ultra-Low-Energy Cr Ions von Bui, Minh N, Rost, Stefan, Auge, Manuel, Zhou, Lanqing, Friedrich, Christoph, Blügel, Stefan, Kretschmer, Silvan, Krasheninnikov, Arkady V, Watanabe, Kenji, Taniguchi, Takashi, Hofsäss, Hans C, Grützmacher, Detlev, Kardynał, Beata E

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Low-energy Se ion implantation in MoS2 monolayers von Bui, Minh N., Rost, Stefan, Auge, Manuel, Tu, Jhih-Sian, Zhou, Lanqing, Aguilera, Irene, Blügel, Stefan, Ghorbani-Asl, Mahdi, Krasheninnikov, Arkady V., Hashemi, Arsalan, Komsa, Hannu-Pekka, Jin, Lei, Kibkalo, Lidia, O’Connell, Eoghan N., Ramasse, Quentin M., Bangert, Ursel, Hofsäss, Hans C., Grützmacher, Detlev, Kardynal, Beata E.

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Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots von Rothfuchs, Charlotte, Kukharchyk, Nadezhda, Koppe, Tristan, Semond, Fabrice, Blumenthal, Sarah, Becker, Hans-Werner, As, Donat J., Hofsäss, Hans C., Wieck, Andreas D., Ludwig, Arne

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Low-energy Se ion implantation in MoS 2 monolayers von Minh N. Bui, Stefan Rost, Manuel Auge, Jhih-Sian Tu, Lanqing Zhou, Irene Aguilera, Stefan Blügel, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Arsalan Hashemi, Hannu-Pekka Komsa, Lei Jin, Lidia Kibkalo, Eoghan N. O’Connell, Quentin M. Ramasse, Ursel Bangert, Hans C. Hofsäss, Detlev Grützmacher, Beata E. Kardynal

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Optical properties of MoSe$_2$ monolayer implanted with ultra-low energy Cr ions von Bui, Minh N, Rost, Stefan, Auge, Manuel, Zhou, Lanqing, Friedrich, Christoph, Blügel, Stefan, Kretschmer, Silvan, Krasheninnikov, Arkady V, Watanabe, Kenji, Taniguchi, Takashi, Hofsäss, Hans C, Grützmacher, Detlev, Kardynał, Beata E

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Optical properties of MoSe\(_2\) monolayer implanted with ultra-low energy Cr ions von Bui, Minh N, Rost, Stefan, Auge, Manuel, Zhou, Lanqing, Friedrich, Christoph, Blügel, Stefan, Kretschmer, Silvan, Krasheninnikov, Arkady V, Watanabe, Kenji, Taniguchi, Takashi, Hofsäss, Hans C, Grützmacher, Detlev, Kardynał, Beata E

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Ion Beam Deposition of Thin Films: Growth Processes and Nanostructure Formation von Hofsass, Hans C

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Neutron depth profiling by coincidence spectrometry von Parikh, Nalin R., Frey, Eric C., Hofsäss, Hans C., Swanson, Max L., Downing, R.Greg, Hossain, Tim Z., Wei-Kan, Chu

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Elektrische Quadrupolwechselwirkung in defektreichen und deformierten MAX-Phasen von Brüsewitz, Christoph

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Doping Graphene with Substitutional Mn von Lin, Pin-Cheng, Villarreal, Renan, Achilli, Simona, Bana, Harsh, Nair, Maya N., Tejeda, Antonio, Verguts, Ken, De Gendt, Stefan, Auge, Manuel, Hofsäss, Hans, De Feyter, Steven, Di Santo, Giovanni, Petaccia, Luca, Brems, Steven, Fratesi, Guido, Pereira, Lino M. C.

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Thermal Annealing of Graphene Implanted with Mn at Ultralow Energies: From Disordered and Contaminated to Nearly Pristine Graphene von Lin, Pin-Cheng, Villarreal, Renan, Bana, Harsh, Zarkua, Zviadi, Hendriks, Vince, Tsai, Hung-Chieh, Auge, Manuel, Junge, Felix, Hofsäss, Hans, Tosi, Ezequiel, Lacovig, Paolo, Lizzit, Silvano, Zhao, Wenjuan, Di Santo, Giovanni, Petaccia, Luca, De Feyter, Steven, De Gendt, Stefan, Brems, Steven, Pereira, Lino M. C.

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A hyperfine look at titanium dioxide von Schell, J., Zyabkin, D., Lupascu, Doru C., Hofsäss, Hans-Christian, Karabasov, M. O., Welker, A., Schaaf, P.

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Correction to Doping Graphene with Substitutional Mn von Lin, Pin-Cheng, Villarreal, Renan, Achilli, Simona, Bana, Harsh, Nair, Maya N., Tejeda, Antonio, Verguts, Ken, De Gendt, Stefan, Auge, Manuel, Hofsäss, Hans, De Feyter, Steven, Di Santo, Giovanni, Petaccia, Luca, Brems, Steven, Fratesi, Guido, Pereira, Lino M. C.

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Single crystal pillar microcompression tests of the MAX phases Ti2InC and Ti4AlN3 von Brüsewitz, Christoph, Knorr, Inga, Hofsäss, Hans, Barsoum, Michel W., Volkert, Cynthia A.

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Single-atom spectroscopy of phosphorus dopants implanted into graphene von Susi, Toma, Hardcastle, Trevor P, Hofsäss, Hans, Mittelberger, Andreas, Pennycook, Timothy J, Mangler, Clemens, Drummond-Brydson, Rik, Scott, Andrew J, Meyer, Jannik C, Kotakoski, Jani

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Bond defects in graphene created by ultralow energy ion implantation von Villarreal, Renan, Lin, Pin-Cheng, Zarkua, Zviadi, Bana, Harsh, Tsai, Hung-Chieh, Auge, Manuel, Junge, Felix, Hofsäss, Hans, Tosi, Ezequiel, De Feyter, Steven, De Gendt, Stefan, Brems, Steven, Å hlgren, E. Harriet, Pereira, Lino M.C.

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Doping Graphene with Substitutional Mn von Lin, Pin-Cheng, Villarreal, Renan, Achilli, Simona, Bana, Harsh, Nair, Maya N, Tejeda, Antonio, Verguts, Ken, de Gendt, Stefan, Auge, Manuel, Hofsäss, Hans, de Feyter, Steven, Santo, Giovanni Di, Petaccia, Luca, Brems, Steven, Fratesi, Guido, Pereira, Lino M C

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Simulation and fitting of high resolution Rutherford backscattering spectra von Borschel, Christian, Schnell, Martin, Ronning, Carsten, Hofsäss, Hans

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