Electrical characterization and modelling of n–n Ge-Si heterojunctions with relatively low interface state densities von Peibst, R, Rugeramigabo, E P, Hofmann, K R

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CaF2/Si/CaF2 double-barrier resonant-tunnelling diodes on Si substrates von Wang, C R, Müller, B H, Hofmann, K R

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Structural, Dielectric, and Interface Properties of Crystalline Barium Silicate Films on Si(100): A Robust High- κ Material von Islam, S., Hofmann, K. R., Feldhoff, A., Pfnür, H.

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Epitaxy of atomically flat CaF2 films on Si(1 1 1) substrates von WANG, C. R, MÜLLER, B. H, HOFMANN, K. R

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Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectrics von COSCEEV, A, MÜLLER-SAJAK, D, PFNÜR, H, HOFMANN, K. R

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Surfactant-grown low-doped germanium layers on silicon with high electron mobilities von Hofmann, K.R, Reinking, D, Kammler, M, Horn-von Hoegen, M

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Initial stages of CaF2/Si(111) epitaxy investigated by friction force microscopy von Müller, B.H., Wang, C.R., Hofmann, K.R., Bierkandt, M., Deiter, C., Wollschläger, J.

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PE-CVD fabrication of germanium nanoclusters for memory applications von Dürkop, T., Bugiel, E., Costina, I., Ott, A., Peibst, R., Hofmann, K.R.

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Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001) von Wietler, Tobias F., Bugiel, Eberhard, Hofmann, Karl R.

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Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectrics von Müller-Sajak, D., Cosceev, A., Brand, C., Hofmann, K. R., Pfnür, H.

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Bi surfactant mediated epitaxy of Ge on Si(111) von Horn-von Hoegen, M., Meyer zu Heringdorf, F.J., Kammler, M., Schaeffer, C., Reinking, D., Hofmann, K.R.

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Surfactant-Mediated Epitaxy of Germanium on Structured Silicon Substrates: Towards Embedded Germanium von Wietler, T F, Bugiel, E, Hofmann, K R

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Effects influencing electron and hole retention times in Ge nanocrystal memory structures operating in the direct tunneling regime von Peibst, R., Erenburg, M., Bugiel, E., Hofmann, K. R.

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Surfactant enhanced growth of thin Si films on CaF2/Si(111) von WANG, C. R, MÜLLER, B. H, BUGIEL, E, HOFMANN, K. R

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AUTOMATIC CONTINUITY OF ABSTRACT HOMOMORPHISMS BETWEEN LOCALLY COMPACT AND POLISH GROUPS von BRAUN, O., HOFMANN, KARL H., KRAMER, L.

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Epitaxial thin films of BaSrO as gate dielectric: Insulating Films on Semiconductors 2013 von ISLAM, S, MÜLLER-SAJAK, D, HOFMANN, K. R, PFNÜR, H

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Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology von Wollschlaeger, J., Deiter, C., Wang, C. R., Mueller, B. H., Hofmann, K. R.

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Single-Electron Charging and Discharging Analyses in Ge-Nanocrystal Memories von de Sousa, J S, Peibst, R, Erenburg, M, Bugiel, E, Farias, G A, Leburton, Jean-Pierre, Hofmann, K R

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Surfactant enhanced solid phase epitaxy of Ge/CaF2/Si(111): Synchrotron x-ray characterization of structure and morphology von Wollschläger, J., Deiter, C., Wang, C. R., Müller, B. H., Hofmann, K. R.

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Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories von de Sousa, J. S., Peibst, R., Farias, G. A., Leburton, J.-P., Hofmann, K. R.

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