Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II-VI heterostructures and devices von GUHA, S, DEPUYDT, J. M, QIU, J, HOFLER, G. E, HAASE, M. A, WU, B. J, CHENG, H

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Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers von TAN, I.-H, VANDERWATER, D. A, HUANG, J.-W, HOFLER, G. E, KISH, F. A, CHEN, E. I, OSTENTOWSKI, T. D

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Low-threshold buried-ridge II-VI laser diodes von HAASE, M. A, BAUDE, P. F, HAGEDORN, M. S, QIU, J, DEPUYDT, J. M, CHENG, H, GUHA, S, HÖFLER, G. E, WU, B. J

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Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD von STOCKMAN, S. A, HANSON, A. W, LICHTENTHAL, S. M, FRESINA, M. T, HÖFLER, G. E, HSIEH, K. C, STILLMAN, G. E

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Characterization of heavily carbon-doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy von STOCKMAN, S. A, HÖFLER, G. E, BAILLARGEON, J. N, HSIEH, K. C, CHENG, K. Y, STILLMAN, G. E

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High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency von Krames, M. R., Ochiai-Holcomb, M., Höfler, G. E., Carter-Coman, C., Chen, E. I., Tan, I.-H., Grillot, P., Gardner, N. F., Chui, H. C., Huang, J.-W., Stockman, S. A., Kish, F. A., Craford, M. G., Tan, T. S., Kocot, C. P., Hueschen, M., Posselt, J., Loh, B., Sasser, G., Collins, D.

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High-brightness AlGaInP light emitting diodes von Vanderwater, D.A., Tan, I.-H., Hofler, G.E., Defevere, D.C., Kish, F.A.

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100〉 dark line defect in II-VI blue-green light emitters von Guha, S., Cheng, H., Haase, M. A., DePuydt, J. M., Qiu, J., Wu, B. J., Hofler, G. E.

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Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1-xAs von KISH, F. A, MARANOWSKI, S. A, HÖFLER, G. E, HOLONYAK, N. JR, CARACCI, S. J, DALLESASSE, J. M, HSIEH, K. C

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Wide band gap MgZnSSe grown on (001) GaAs by molecular beam epitaxy von Wu, B. J., DePuydt, J. M., Haugen, G. M., Höfler, G. E., Haase, M. A., Cheng, H., Guha, S., Qiu, J., Kuo, L. H., Salamanca-Riba, L.

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Room temperature II–VI lasers with 2.5 mA threshold von DePuydt, J.M., Haase, M.A., Guha, S., Qiu, J., Cheng, H., Wu, B.J., Höfler, G.E., Meis-Haugen, G., Hagedorn, M.S., Baude, P.F.

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Al-Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon-doped Al0.4Ga0.6As/GaAs superlattices : the As4 pressure effect von YOU, H. M, TAN, T. Y, GÖSELE, U. M, LEE, S.-T, HÖFLER, G. E, HSIEH, K. C, HOLONYAK, N. JR

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High current density carbon-doped strained-layer GaAs (p+)-InGaAs(n+)-GaAs(n+) p-n tunnel diodes von RICHARD, T. A, CHEN, E. I, SUGG, A. R, HÖFLER, G. E, HOLONYAK, N. JR

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Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers von Höfler, G. E., Vanderwater, D. A., DeFevere, D. C., Kish, F. A., Camras, M. D., Steranka, F. M., Tan, I.-H.

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Observation of interstitial carbon in heavily carbon-doped GaAs von HÖFLER, G. E, HSIEH, K. C

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Low-threshold disorder-defined native-oxide delineated buried-heterostructure AlxGa1-xAs-GaAs quantum well lasers von KISH, F. A, CARACCI, S. J, HOLONYAK, N. JR, DALLESASSE, J. M, HOFLER, G. E, BURNHAM, R. D, SMITH, S. C

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Diffusion of manganese in GaAs and its effect on layer disordering in AlxGa1-xas-GaAs superlattices von WU, C. H, HSIEH, K. C, HÖFLER, G. E, EL-ZEIN, N, HOLONYAK, N. JR

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Effect of annealing temperature on the hole concentration and lattice relaxation of carbon-doped GaAs and AlxGa1-xAs von HÖFLER, G. E, HÖFLER, H. J, HOLONYAK, N. JR, HSIEH, K. C

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40-gb/s EA modulators with wide temperature operation and negative chirp von Billia, L, Zhu, Jintian, Ranganath, T, Bour, D P, Corzine, S W, Hofler, G E

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Testing High-Frequency Electronic Signals With Reflection-Mode Electroabsorption Modulators von Van Tuyl, R.L., Hofler, G.E., Ritter, R.G., Marshall, T.S., Jintian Zhu, Billia, L., Clifford, G.M., William Gong, Bour, D.P.

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