High-power laser light source for near-field optics and its application to high-density optical data storage von Partovi, Afshin, Peale, David, Wuttig, Matthias, Murray, Cherry A., Zydzik, George, Hopkins, Leslie, Baldwin, Kirk, Hobson, William S., Wynn, James, Lopata, John, Dhar, Lisa, Chichester, Rob, Yeh, James H-J

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Microscopic and macroscopic uniformity control in plasma etching von GIAPIS, SCHELLER, G. R, GOTTSCHO, R. A, HOBSON, W. S, LEE, Y. H

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Photoluminescent properties of n-GaAs electrodes: simultaneous determination of depletion widths and surface hole-capture velocities in photoelectrochemical cells von BURK, A. A. JR, JOHNSON, P. B, HOBSON, W. S, ELLIS, A. B

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Photoluminescent properties of n-GaAs electrodes: applications of the dead-layer model to photoelectrochemical cells von HOBSON, W. S, ELLIS, A. B

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Low-temperature plasma etching of GaAs, AlGaAs, and AlAs von GREGUS, J. A, VERNON, M. F, GOTTSCHO, R. A, SCHELLER, G. R, HOBSON, W. S, OPILA, R. L, YOON, E

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Photoluminescent properties of p-GaAs electrodes related to the photocurrent anomaly: determination of surface electron-capture velocities and depletion widths in photoelectrochemi... von JOHNSON, P. B, MCMILLAN, C. S, ELLIS, A. B, HOBSON, W. S

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Bond length changes resulting from halogen substitution of oxirane von Deakyne, Carol A, Cravero, Joseph P, Hobson, William S

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Electrical characterization of Al x Ga1− x As grown by low-pressure organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor von Paraskevopoulos, Nicholas G., McAfee, Sigrid R., Hobson, William S.

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Photoelectrochemical cells based on GaAs0.6P0.4 epilayers: Stabilization and luminescent properties von Hobson, William S., Ellis, Arthur B.

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BURIED HETEROSTRUCTURE LASERS USING MOCVD GROWTH OVER PATTERNED SUBSTRATES von LOPATA, JOHN R, HOBSON, WILLIAM S, BERGER, PAUL R, DUTTA, NILOY K

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Photoluminescent and electroluminescent properties of GaAs1− x P x -GaAs1− y P y isotype heterojunction electrodes von Hobson, William S., Johnson, Phelps B., Ellis, Arthur B., Biefeld, R. M.

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Cotton picking machine von HOBSON WILLIAM S

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TURNS von HOBSON, WILLIAM S

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TRUSS von WILLIAM S. HOBSON

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Method of making in-containing III/V semiconductor devices von LOPATA, JOHN, REN, FAN, HOBSON, WILLIAM S

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Photoluminescent Properties of n-GaAs Electrodes: Applications of the Dead-Layer Model to Photoelectrochemical Cells von Hobson,William S, Ellis,Arthur B

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BURIED HETEROSTRUCTURE LASERS USING MOCVD GROWTH OVER PATTERNED SUBSTRATES von HOBSON, WILLIAM S, LOPATA, JOHN, BERGER, PAUL R, DUTTA, NILOY K

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Buried heterostructure lasers using MOCVD growth over patterned substrates von LOPATA, JOHN, BERGER, PAUL R, HOBSON, WILLIAM S, DUTTA, NILOY K

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FABRICATION OF ALUMINUM-CONTAINING SEMICONDUCTOR DEVICES von ABERNATHY, CAMMY R, REN, FAN, HOBSON, WILLIAM S, PEARTON, STEPHEN J, JORDAN, ANDREW S

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Photoluminescent Properties of p-GaAs Electrodes Related to the 'Photocurrent Anomaly': Determination of Surface Electron-Capture Velocities and Depletion Widths in Photoelectroche... von Johnson,Phelps B, McMillan,Christopher S, Ellis,Arthur B, Hobson,William S

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