High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs von Nguyen, Van Cuong, Cha, Ho-Young, Kim, Hyungtak

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Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric von Kim, Hyun-Seop, Han, Sang-Woo, Jang, Won-Ho, Cho, Chun-Hyung, Seo, Kwang-Seok, Oh, Jungwoo, Cha, Ho-Young

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β‐(Al0.17Ga0.83)2O3/Ga2O3 Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis... von Atmaca, Gökhan, Cha, Ho-Young

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Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode von Lee, Sung-Hoon, Cha, Ho-Young

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Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process von Yang, Yeo-Reum, Yim, Jun-Hyeok, Kim, Hyun-Seop, Cha, Ho-Young

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Recessed AlGaN/GaN Heterojunction-Based Hydrogen Sensor Operated by Reverse Bias Mode von Choi, June-Heang, Kim, Hyungtak, Cha, Ho-Young

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Enhancement mode β-(Al0.19Ga0.81)2O3/Ga2O3 HFETs with superlattice back-barrier layer von Atmaca, Gökhan, Cha, Ho-Young

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Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature von Vuong, Tuan-Anh, Cha, Ho-Young, Kim, Hyungtak

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Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs von Chae, Myeongsu, Cha, Ho-Young, Kim, Hyungtak

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On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer von Im, Ki-Sik, Choi, Uiho, Kim, Minho, Choi, Jinseok, Kim, Hyun-Seop, Cha, Ho-Young, An, Sung Jin, Nam, Okhyun

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The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate von Choi, Young Chul, Pophristic, Milan, Cha, Ho-Young, Peres, Boris, Spencer, Michael G., Eastman, Lester F.

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Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode von LEE, Jae-Gil, PARK, Bong-Ryeol, CHO, Chun-Hyung, SEO, Kwang-Seok, CHA, Ho-Young

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Special issue on next‐gen AI and quantum technology von Kim, Ji‐Hoon, Cha, Ho‐Young, Kwon, Daewoong, Choi, Gyu Sang, Kim, HeeSeok, Kang, Yousung

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Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films von Jang, Chan-Hee, Kim, Hyun-Seop, Kim, Hyungtak, Cha, Ho-Young

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Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads von Seo, Seung Gi, Han, Sang-Woo, Cha, Ho-Young, Yang, Sunggu, Jin, Sung Hun

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Impact Ionization Coefficients in 4H-SiC von Loh, W.S., Ng, B.K., Ng, J.S., Soloviev, S.I., Ho-Young Cha, Sandvik, P.M., Johnson, C.M., David, J.P.R.

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Normally-off β-Ga2O3 MOSFET with an Epitaxial Drift Layer von Jang, Chan-Hee, Atmaca, Gökhan, Cha, Ho-Young

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Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition von Hwang, Il-Hwan, Kang, Myoung-Jin, Cha, Ho-Young, Seo, Kwang-Seok

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Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy von Shin, Seungheon, Kim, Kyoung Hwa, Lee, Gang Seok, Lee, Jae Hak, Ahn, Hyung Soo, Cha, Ho-Young

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4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency von Handin Liu, Mcintosh, D., Xiaogang Bai, Huapu Pan, Mingguo Liu, Campbell, J.C., Ho Young Cha

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