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  1. 1
    Recovery of (411)A Superflat Interfaces in GaAs/Al 0.3 Ga 0.7 As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy

    Recovery of (411)A Superflat Interfaces in GaAs/Al 0.3 Ga 0.7 As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy von Shinohara, Keisuke, Shimizu, Yasuyuki, Shimomura, Satoshi, Hiyamizu, andSatoshi


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    High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy

    High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy von andSatoshi Hiyamizu, Takahiro Kitada


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