547-GHz ft In0.7Ga0.3As-In0.52Al0.48As HEMTs with reduced source and drain resistance von Shinohara, K, Yamashita, Y, Endoh, A, Watanabe, I, Hikosaka, K, Matsui, T, Mimura, T, Hiyamizu, S

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Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency von Yamashita, Y., Endoh, A., Shinohara, K., Higashiwaki, M., Hikosaka, K., Mimura, T., Hiyamizu, S., Matsui, T.

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Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency von Shinohara, K., Yamashita, Y., Endoh, A., Hikosaka, K., Matsui, T., Mimura, T., Hiyamizu, S.

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Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates von Watanabe, I., Shinohara, K., Kitada, T., Shimomura, S., Yamashita, Y., Endoh, A., Mimura, T., Hiyamizu, S., Matsui, T.

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Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy von Kitada, T., Aoki, T., Watanabe, I., Shimomura, S., Hiyamizu, S.

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Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy von Higuchi, Y., Osaki, S., Kitada, T., Shimomura, S., Takasuka, Y., Ogura, M., Hiyamizu, S.

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Highly uniform and high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy von Higashiwaki, M., Yamamoto, M., Shimomura, S., Hiyamizu, S.

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Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz von Yamashita, Y, Endoh, A, Shinohara, K, Hikosaka, K, Matsui, T, Hiyamizu, S, Mimura, T

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1.3 μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (22 1)A InP substrates by molecular beam epitaxy von SHIMOMURA, S, TORITSUKA, T, UENISHI, A, KITADA, T, HIYAMIZU, S

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Much improved self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy von Ohmori, K, Hino, H, Fujita, T, Kitada, T, Shimomura, S, Hiyamizu, S

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Much improved flat interfaces of InGaAs∕AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy von Imura, M., Kurohara, H., Masui, Y., Asano, T., Kitada, T., Shimomura, S., Hiyamizu, S.

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Photoreflectance characterization of GaAs/AlAs quantum wells with [formula omitted] super-flat interfaces grown by molecular beam epitaxy von Kitada, T, Kawazoe, D, Shimomura, S, Hiyamizu, S

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Room temperature lasing of quantum wire VCSELs by optical pumping grown on the [formula omitted]B GaAs substrates by MBE von Ohno, Y, Kanamori, H, Shimomura, S, Hiyamizu, S

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Cathodoluminescence properties of GaAs/AlGaAs pyramidal cap structures with high spatial resolution von Sawada, Y., Ichimiya, M., Ashida, M., Shimomura, S., Hiyamizu, S., Itoh, T.

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In0.15Ga0.85As/GaAs quantum wire structures grown on (5 5 3)B GaAs substrates by molecular beam epitaxy von Hiyamizu, S., Ohno, Y., Higashiwaki, M., Shimomura, S.

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Resonant excitation and anti-Stokes luminescence of GaAs single quantum dots von Edamatsu, K., Watatani, C., Itoh, T., Shimomura, S., Hiyamizu, S.

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Cyclotron resonance of ultrashort-period lateral superlattices von Sugimoto, Y., Takaoka, S., Oto, K., Ohno, Y., Shimomura, S., Hiyamizu, S.

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547-GHz $f_t$ In $_0.7$ Ga $_0.3$ As–In $_0.52$ Al $_0.48$ As HEMTs With Reduced Source and Drain Resistance von Shinohara, K, Yamashita, Y, Endoh, A, Watanabe, I, Hikosaka, K, Matsui, T, Mimura, T, Hiyamizu, S

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Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy von Ohno, Yasuhide, Kitada, Takahiro, Shimomura, Satoshi, Hiyamizu, Satoshi

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Confined Multiexciton States of GaAs/AlGaAs Quantum Dots Grown on a (411)A GaAs Surface von Watatani, C., Edamatsu, K., Itoh, T., Hayashi, H., Shimomura, S., Hiyamizu, S.

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