Activation of Mg implanted in GaN by multicycle rapid thermal annealing von Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R

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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN von Feigelson, B.N., Anderson, T.J., Abraham, M., Freitas, J.A., Hite, J.K., Eddy, C.R., Kub, F.J.

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Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process von Nath, A., Koehler, A. D., Jernigan, G. G., Wheeler, V. D., Hite, J. K., Hernández, S. C., Robinson, Z. R., Garces, N. Y., Myers-Ward, R. L., Eddy, C. R., Gaskill, D. K., Rao, M. V.

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GaN vertical and lateral polarity heterostructures on GaN substrates von Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.

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Approach for dislocation free GaN epitaxy von Hite, J.K., Mastro, M.A., Eddy, C.R.

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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy von Nepal, N., Qadri, S. B., Hite, J. K., Mahadik, N. A., Mastro, M. A., Eddy, C. R.

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Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD von Hite, J.K., Anderson, T.J., Luna, L.E., Gallagher, J.C., Mastro, M.A., Freitas, J.A., Eddy, C.R.

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Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy von Frazier, R. M., Thaler, G. T., Leifer, J. Y., Hite, J. K., Gila, B. P., Abernathy, C. R., Pearton, S. J.

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Morphology characterization of argon-mediated epitaxial graphene on C-face SiC von Tedesco, J. L., Jernigan, G. G., Culbertson, J. C., Hite, J. K., Yang, Y., Daniels, K. M., Myers-Ward, R. L., Eddy, C. R., Robinson, J. A., Trumbull, K. A., Wetherington, M. T., Campbell, P. M., Gaskill, D. K.

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Long range, non-destructive characterization of GaN substrates for power devices von Gallagher, J.C., Anderson, T.J., Luna, L.E., Koehler, A.D., Hite, J.K., Mahadik, N.A., Hobart, K.D., Kub, F.J.

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Nature of luminescence and strain in gallium nitride nanowires von Mastro, M.A., Maximenko, S., Gowda, M., Simpkins, B.S., Pehrsson, P.E., Long, J.P., Makinen, A.J., Freitas, J.A., Hite, J.K., Eddy, C.R., Kim, J.

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Correlation of threading screw dislocation density to GaN 2‐DEG mobility von Hite, J.K., Gaddipati, P., Meyer, D.J., Mastro, M.A., Eddy, C.R.

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Epitaxial graphene surface preparation for atomic layer deposition of Al2O3 von Garces, N. Y., Wheeler, V. D., Hite, J. K., Jernigan, G. G., Tedesco, J. L., Nepal, Neeraj, Eddy, C. R., Gaskill, D. K.

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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth von Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.

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GaN single crystals of different habit grown from solution at near atmospheric pressure von Feigelson, B.N., Hite, J.K., Garces, N.Y., Freitas, J.A., Tischler, J.G., Klein, P.B.

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Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN von Hossain, T., Wei, D., Nepal, N., Garces, N. Y., Hite, J. K., Meyer III, H. M., Eddy Jr, C. R., Baker, Troy, Mayo, Ashley, Schmitt, Jason, Edgar, J. H.

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Effect of growth conditions on the magnetic characteristics of GaGdN von Hite, J. K., Frazier, R. M., Davies, R., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Zavada, J. M.

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Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN von Wei, D., Hossain, T., Nepal, N., Garces, N. Y., Hite, J. K., Meyer III, H. M., Eddy Jr, C. R., Edgar, J. H.

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Effect of Si Co Doping on Ferromagnetic Properties of GaGdN von Hite, J.K., Frazier, R.M., Davies, R.P., Thaler, G.T., Abernathy, C.R., Pearton, S.J., Zavada, J.M., Brown, E., Hömmerich, U.

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Dilute Magnetic III-N Semiconductors Based on Rare Earth Doping von Hite, J. K., Zavada, J. M.

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