Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties von GARCIA, J. C, MAUREL, P, BOVE, P, HIRTZ, J. P, BARSKI, A

Volltext

The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy von Pearsall, T.P., Hirtz, J.P.

Volltext

GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications von Duchemin, J.P., Hirtz, J.P., Razeghi, M., Bonnet, M., Hersee, S.D.

Volltext

Preface von von Bardeleben, H.J., Hirtz, J.P., Manasreh, M.O.

Volltext

Preface von Hirtz, J.P., Meier, H., Whitehouse, C.

Volltext

Reliability and qualification methodology of 60 W QCW linear bar arrays von Stoltz, M.P, Burgaud, P, Murgadella, F, Hirtz, J.P, Petit, P, Vervoitte, A

Volltext

Metal-organic research in semiconductor epitaxy: ESPRIT II—MORSE project overview von Hirtz, J.P.

Volltext

Chemical beam epitaxy of Ga 0.5In 0.5P using tertiarybutylphosphine von Garcia, J.Ch, Regreny, Ph, Delage, S.L., Blanck, H., Hirtz, J.P.

Volltext

A comparative study of GaInP/GaAs heterojunction bipolar transistors grown by CBE using TBA/TBP and AsH/sub 3//PH/sub 3/ sources von Ng, G.I., Pavlidis, D., Samelis, A., Pehlke, D., Garcia, J.C., Hirtz, J.P.

Volltext

Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine von GARCIA, J. C, REGRENY, P, DELAGE, S. L, BLANCK, H, HIRTZ, J. P

Volltext

The carrier mobilities in Ga 0.47In 0.53as grown by organo-mettalic CVD and liquid-phase epitaxy von Pearsall, T.P., Hirtz, J.P.

Volltext

Chemical beam epitaxy growth of GaAs/Ga 0.5In 0.5P heterostructures: growth kinetics, electrical and optical properties von Garcia, J.C., Maurel, P., Bove, P., Hirtz, J.P., Barski, A.

Volltext

High Brightness Single-Mode 1060-nm Diode Lasers for Demanding Industrial Applications von Bettiati, M., Laruelle, F., Cargemel, V., Bourdeaux, P., Pagnod-Rossiaux, P., Garabedian, P., Van de Casteele, J., Fromy, S., Chambonnet, D., Hirtz, J.P.

Volltext bestellen

MOMBE growth of high quality GaAs/GaInP heterostructures von Maurel, Ph, Bove, Ph, Garcia, J.C., Hirtz, J.P., Razeghi, M.

Volltext

Line resolution in the sub-ten-nanometer range in SAM von Cazaux, J., Chazelas, J., Charasse, M.N., Hirtz, J.P.

Volltext

As deposited epitaxial Dy 1 Ba 2 Cu 3 O thin films by M.B.E von Schuhl, A., Cabanel, R., Koch, S., Siejka, J., Touzeau, M., Hirtz, J.P., Creuzet, G.

Volltext

As deposited epitaxial Dy1Ba2Cu3O thin films by M.B.E von Schuhl, A., Cabanel, R., Koch, S., Siejka, J., Touzeau, M., Hirtz, J.P., Creuzet, G.

Volltext

TP-B2 room-temperature of a GaInAsP/InP double-heterostructure laser grown by low-pressure metallorganic chemical-vapor deposition von Hirtz, J.P., Duchemin, J.P.

Volltext

On the route to epitaxial growth of YBa2Cu3O7 superconducting thin films by molecular beam epitaxy von Cabanel, R., Hirtz, J.P., Etienne, P., Fruchter, L., Giovannella, C., Creuzet, G.

Volltext

Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature von Guldner, Y., Hirtz, J.P., Briggs, A., Vieren, J.P., Voos, M., Razeghi, M.

Volltext