High and broadband sensitivity front-side illuminated InGaAs photo field-effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate von Maeda, Tatsuro, Oishi, Kazuaki, Ishii, Hiroyuki, Chang, Wen Hsin, Shimizu, Tetsuji, Endoh, Akira, Fujishiro, Hiroki, Koida, Takashi

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Size Control and Photoluminescence Characteristics of InSb Quantum Dots on GaSb Substrates Grown by Molecular Beam Epitaxy von Kuwabara, Emin, Yamamoto, Kyosuke, Koseki, Keisuke, Gozu, Shin‐Ichiro, Endoh, Akira, Fujishiro, Hiroki I.

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Investigation of the growth mechanism and crystallographic structures of GaSb dots nucleation layer and GaSb thin film grown on Si(001) substrate by molecular beam epitaxy von Machida, Ryuto, Toda, Ryusuke, Hara, Shinsuke, Watanabe, Issei, Akahane, Kouichi, Fujikawa, Sachie, Kasamatsu, Akifumi, Fujishiro, Hiroki I.

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Schottky barrier contact on In0.53Ga0.47As with short-wave infrared transparent conductive oxide von Maeda, Tatsuro, Oishi, Kazuaki, Ishii, Hiroto, Ishii, Hiroyuki, Chang, Wen Hsin, Shimizu, Tetsuji, Endoh, Akira, Fujishiro, Hiroki, Koida, Takashi

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Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer... von Endoh, Akira, Hatori, Koharu, Kishimoto, Naoyuki, Hiraoka, Mizuho, Kemmochi, Yuta, Endoh, Yuki, Osawa, Koki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Kasamatsu, Akifumi, Fujishiro, Hiroki I

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Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epit... von Machida, Ryuto, Akahane, Kouichi, Watanabe, Issei, Hara, Shinsuke, Fujikawa, Sachie, Kasamatsu, Akifumi, Fujishiro, Hiroki I.

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Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD von Fujikawa, Sachie, Ishiguro, Toshiya, Wang, Ke, Terashima, Wataru, Fujishiro, Hiroki, Hirayama, Hideki

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Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100) von Machida, Ryuto, Toda, Ryusuke, Fujikawa, Sachie, Hara, Shinsuke, Watanabe, Issei, Fujishiro, Hiroki I.

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Spectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si von Oishi, Kazuaki, Ishii, Hiroyuki, Chang, Wen Hsin, Ishii, Hiroto, Endoh, Akira, Fujishiro, Hiroki, Maeda, Tatsuro

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Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors von Takahashi, Takuto, Hatsushiba, Shota, Fujikawa, Sachie, Fujishiro, Hiroki I.

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Effect of low-temperature-grown GaSb layer on formation of high-density and small GaSb islands on Si(100) substrate von Machida, Ryuto, Toda, Ryusuke, Fujikawa, Sachie, Hara, Shinsuke, Watanabe, Issei, Fujishiro, Hiroki I.

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Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer von Hiraoka, Mizuho, Endoh, Yuki, Osawa, Koki, Kishimoto, Naoyuki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Gotow, Takahiro, Kasamatsu, Akifumi, Endoh, Akira, Fujishiro, Hiroki I.

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InGaAs photo field-effect-transistors (PhotoFETs) on half-inch Si wafer using layer transfer technology von Maeda, Tatsuro, Ishii, Hiroyuki, Chang, Wen Hsin, Shimizu, Tetsuji, Ishii, Hiroto, Ohishi, Kazuaki, Endoh, Akira, Fujishiro, Hiroki

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Surface cleaning and pure nitridation of GaSb by in-situ plasma processing von Gotow, Takahiro, Fujikawa, Sachie, Fujishiro, Hiroki I., Ogura, Mutsuo, Chang, Wen Hsin, Yasuda, Tetsuji, Maeda, Tatsuro

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Selective growth of InSb on localized area of Si(100) by molecular beam epitaxy von Hara, Shinsuke, Iida, Tomoaki, Nishino, Yuichi, Uchida, Akinori, Horii, Hiroyuki, Fujishiro, Hiroki I.

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Comparative study on nano-scale III-V double-gate MOSFETs with various channel materials von Nishida, Akio, Hasegawa, Kei, Ohama, Ryoko, Fujikawa, Sachie, Hara, Shinsuke, Fujishiro, Hiroki I.

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Growth process and morphology of three-dimensional GaSb islands on Ga/Si(111) von Hara, Shinsuke, Machida, Ryuto, Yoshiki, Keisuke, Irokawa, Katsumi, Miki, Hirofumi, Kawazu, Akira, Fujishiro, Hiroki I.

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Delay Time Analysis of Graded Gate Field-Plate AlGaN/GaN High Electron Mobility Transistors Using Monte Carlo Simulation von Hara, Kazuya, Toshima, Takuya, Hara, Shinsuke, Fujishiro, Hiroki I

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STM study of Si(113) 3 x 2-Ga surface von IROKAWA, Katsumi, NAGURA, Yuichiro, KOBAYASHI, Hidekazu, HARA, Shinsuke, FUJISHIRO, Hiroki I, MIKI, Hirofumi, KAWAZU, Akira, WATANABE, Kazuyuki

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High-Responsivity Ge Schottky Photodetectors with Short-Wave Infrared Transparent Conductive Oxide Electrodes von Ishii, Hiroto, Chang, Wen Hsin, Ishii, Hiroyuki, Koida, Takashi, Fujishiro, Hiroki, Maeda, Tatsuro

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