Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout von Kuboyama, S., Kamezawa, C., Ikeda, N., Hirao, T., Ohyama, H.

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Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons von Kuboyama, S., Kamezawa, C., Satoh, Y., Hirao, T., Ohyama, H.

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High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors von Laird, Jamie Stuart, Hirao, Toshio, Onoda, Shinobu, Itoh, Hisayoshi

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The role of a radial ion-track distribution in semiconductors studied by numerical simulations von Onoda, Shinobu, Hirao, Toshio, Ohshima, Takeshi, Itoh, Hisayoshi

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60Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors von Ueki, Hideharu, Ohshima, Takeshi, Cai, Li, Takayanagi, Hideharu, Duan, Zong Fan, Nishioka, Yasushiro, Hirao, Toshio, Yano, Hiroaki

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Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices von Laird, J.S., Hirao, T., Onoda, S., Itoh, H., Johnston, A.

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Gamma-ray Irradiated Organic Thin Film Transistors Based on Perfluoropentacene with Polyimide Gate Insulator von Takayanagi, Yutaro, Ohuchi, Hirokuni, Duan, Zongfan, Okukawa, Takanori, Yanagi, Yuichiro, Yoshida, Akira, Taguchi, Mitsumasa, Hirao, Toshio, Nishioka, Yasushiro

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Characteristics of Gamma–Ray Irradiated Pentacene Organic Thin Film Field Effect Transistors von Ohuchi, Hirokuni, Ueki, Hideharu, Ohshima, Takeshi, Takayanagi, Yutaro, Duan, Zong Fan, Nishioka, Yasushiro, Yano, Hiroaki, Cai, Li, Hirao, Toshio

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Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs von Kuboyama, S., Maru, A., Shindou, H., Ikeda, N., Hirao, T., Abe, H., Tamura, T.

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Electrical properties of carbon-nanotube-network transistors in air after gamma irradiation von Ishii, Satoshi, Yabe, Daisuke, Enomoto, Shotaro, Koshio, Shigeru, Konishi, Teruaki, Hamano, Tsuyoshi, Hirao, Toshio

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Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes von Makino, Takahiro, Deki, Manato, Iwamoto, Naoya, Onoda, Shinobu, Hoshino, Norihiro, Tsuchida, Hidekazu, Hirao, Toshio, Ohshima, Takeshi

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Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams von Ohshima, Takeshi, Oikawa, Masakazu, Hirao, Toshio, Itoh, Hisayoshi, Onoda, Shinobu, Satoh, Takahiro

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Relaxation of high-energy heavy-ion induced bipolar plasmas in Si epilayer devices as a function of temperature von Laird, Jamie S., Onoda, Shinobu, Hirao, Toshio

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Observation of transient current induced in silicon carbide diodes by ion irradiation von Ohshima, Takeshi, Lee, Kin K., Onoda, Shinobu, Kamiya, Tomihiro, Oikawa, Masakazu, Laird, Jamie S., Hirao, Toshio, Itoh, Hisayoshi

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Quenching of impact ionization in heavy-ion induced electron-hole pair plasma tracks in wide bandwidth avalanche photodetectors von Laird, Jamie Stuart, Onoda, Shinobu, Hirao, Toshio, Edmonds, Larry

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Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs von Kuboyama, Satoshi, Ikeda, Naomi, Mizuta, Eiichi, Abe, Hiroshi, Hirao, Toshio, Tamura, Takashi

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Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector von Laird, Jamie S., Onoda, Shinobu, Hirao, Toshio, Ohyama, Hidenori

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Heavy-ion induced current in MOS structure von Takahashi, Yoshihiro, Shibata, Toshihiko, Ohnishi, Kazunori, Hirao, Toshio, Onoda, Shinobu, Kamiya, Tomihiro

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Effect of ion position on single-event transient current von Hirao, Toshio, Nashiyama, Isamu, Kamiya, Tomihiro, Suda, Tamotsu, Sakai, Takuro, Hamano, Tsuyoshi

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DICE-Based Flip-Flop With SET Pulse Discriminator on a 90 nm Bulk CMOS Process von Maru, A, Shindou, H, Ebihara, T, Makihara, A, Hirao, T, Kuboyama, S

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