GaAs/GaAsPBi core–shell nanowires grown by molecular beam epitaxy von Himwas, C, Yordsri, V, Thanachayanont, C, Tchernycheva, M, Panyakeow, S, Kanjanachuchai, S

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GaAsPBi epitaxial layer grown by molecular beam epitaxy von Himwas, C, Soison, A, Kijamnajsuk, S, Wongpinij, T, Euaraksakul, C, Panyakeow, S, Kanjanachuchai, S

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Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowires von Himwas, C, Collin, S, Chen, H-L, Patriarche, G, Oehler, F, Travers, L, Saket, O, Julien, F H, Harmand, J-C, Tchernycheva, M

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Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001) von Himwas, C., Kijamnajsuk, S., Yordsri, Thanachayanont, C., Wongpinij, T., Euaruksakul, C., Panyakeow, S., Kanjanachuchai, S.

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In situ passivation of GaAsP nanowires von Himwas, C, Collin, S, Rale, P, Chauvin, N, Patriarche, G, Oehler, F, Julien, F H, Travers, L, Harmand, J-C, Tchernycheva, M

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Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires von Saket, O., Himwas, C., Cattoni, A., Oehler, F., Bayle, F., Collin, S., Travers, L., Babichev, A., Julien, F. H., Harmand, J. C., Tchernycheva, M.

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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells von Redaelli, L., Mukhtarova, A., Valdueza-Felip, S., Ajay, A., Bougerol, C., Himwas, C., Faure-Vincent, J., Durand, C., Eymery, J., Monroy, E.

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Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots von Himwas, C, Songmuang, R, Bleuse, J, Rapenne, L, Sarigiannidou, E, Monroy, E

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Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots von Himwas, C., den Hertog, M., Bellet-Amalric, E., Songmuang, R., Donatini, F., Si Dang, Le, Monroy, E.

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AlGaN/AlN quantum dots for UV light emitters von Himwas, C., Hertog, M. den, Donatini, F., Dang, Le Si, Rapenne, L., Sarigiannidou, E., Songmuang, R., Monroy, E.

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Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires von Saket, O., Himwas, C., Cattoni, A., Oehler, F., Bayle, F., Collin, S., Travers, L., Babichev, A., Julien, F., Harmand, J., Tchernycheva, M.

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Degradation mechanisms of annealed GaAsPBi films grown by molecular beam epitaxy von Himwas, C., Wongpinij, T., Kijamnajsuk, S., Euaruksakul, C., Photongkam, P., Tchernycheva, M., Pumee, W., Panyakeow, S., Kanjanachuchai, S.

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Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission von Himwas, C., den Hertog, M., Dang, Le Si, Monroy, E., Songmuang, R.

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Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy von Lavenus, P, Messanvi, A, Rigutti, L, De Luna Bugallo, A, Zhang, H, Bayle, F, Julien, F H, Eymery, J, Durand, C, Tchernycheva, M

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Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots von Himwas, C., Songmuan, R., S. Dang, L., Bleuse, J., Rapenne, L., Sarigiannidou, E., Monroy, E.

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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells von Redaelli, L, Mukhtarova, A, Valdueza-Felip, S, Ajay, A, Bougerol, C, Himwas, C, Faure-Vincent, J, Durand, C, Eymery, J, Monroy, E

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Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission von Himwas, C, den Hertog, M, Le Si Dang, Monroy, E, Songmuang, R

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Luminescence properties of as-grown and annealed InGaAs quantum dots on cross-hatch patterns von Himwas, C., Thainoi, S., Panyakeow, S., Kanjanachuchai, S.

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