Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping von Onuma, T., Nakata, Y., Sasaki, K., Masui, T., Yamaguchi, T., Honda, T., Kuramata, A., Yamakoshi, S., Higashiwaki, M.

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Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation von De Santi, C., Fregolent, M., Buffolo, M., Wong, M. H., Higashiwaki, M., Meneghesso, G., Zanoni, E., Meneghini, M.

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges von Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., Chua, C. L., Collazo, R., Coltrin, M. E., Cooper, J. A., Evans, K. R., Graham, S., Grotjohn, T. A., Heller, E. R., Higashiwaki, M., Islam, M. S., Juodawlkis, P. W., Khan, M. A., Koehler, A. D., Leach, J. H., Mishra, U. K., Nemanich, R. J., Pilawa‐Podgurski, R. C. N., Shealy, J. B., Sitar, Z., Tadjer, M. J., Witulski, A. F., Wraback, M., Simmons, J. A.

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Polarized Raman spectra in β-Ga2O3 single crystals von Onuma, T., Fujioka, S., Yamaguchi, T., Itoh, Y., Higashiwaki, M., Sasaki, K., Masui, T., Honda, T.

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Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 von Ricci, F, Boschi, F, Baraldi, A, Filippetti, A, Higashiwaki, M, Kuramata, A, Fiorentini, V, Fornari, R

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Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals von Onuma, T., Saito, S., Sasaki, K., Goto, K., Masui, T., Yamaguchi, T., Honda, T., Kuramata, A., Higashiwaki, M.

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Electronic properties of the residual donor in unintentionally doped β-Ga2O3 von Son, N. T., Goto, K., Nomura, K., Thieu, Q. T., Togashi, R., Murakami, H., Kumagai, Y., Kuramata, A., Higashiwaki, M., Koukitu, A., Yamakoshi, S., Monemar, B., Janzén, E.

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AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN von Higashiwaki, M., Mimura, T., Matsui, T.

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Electroreflectance study on optical anisotropy in β-Ga2O3 von Onuma, T., Tanaka, K., Sasaki, K., Yamaguchi, T., Honda, T., Kuramata, A., Yamakoshi, S., Higashiwaki, M.

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Optical properties of Si-doped InN grown on sapphire (0001) von Inushima, T., Higashiwaki, M., Matsui, T.

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AlGaN/GaN MIS-HFETs with fT of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers von Higashiwaki, M., Matsui, T., Mimura, T.

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Enhancement-Mode AlN/GaN HFETs Using Cat-CVD SiN von Higashiwaki, M., Mimura, T., Matsui, T.

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Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation von Onojima, N., Higashiwaki, M., Suda, J., Kimoto, T., Mimura, T., Matsui, T.

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Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers von Higashiwaki, M., Hirose, N., Matsui, T.

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Correlation between blue luminescence intensity and resistivity in β -Ga2O3 single crystals von Onuma, T., Fujioka, S., Yamaguchi, T., Higashiwaki, M., Sasaki, K., Masui, T., Honda, T.

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Electron density dependence of the electronic structure of InN epitaxial layers grown on sapphire (0001) von INUSHIMA, T, HIGASHIWAKI, M, MATSUI, T, TAKENOBU, T, MOTOKAWA, M

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Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs von Yi Pei, Rajan, S., Higashiwaki, M., Zhen Chen, DenBaars, S.P., Mishra, U.K.

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Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency von Yamashita, Y., Endoh, A., Shinohara, K., Higashiwaki, M., Hikosaka, K., Mimura, T., Hiyamizu, S., Matsui, T.

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Raman Thermography of Peak Channel Temperature in \beta -Ga2O3 MOSFETs von Pomeroy, J. W., Middleton, C., Singh, M., Dalcanale, S., Uren, M. J., Wong, M. H., Sasaki, K., Kuramata, A., Yamakoshi, S., Higashiwaki, M., Kuball, M.

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Control of electron density in InN by Si doping and optical properties of Si-doped InN von Higashiwaki, M., Inushima, T., Matsui, T.

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