Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization von Svensson, S.P., Donetsky, D., Wang, D., Hier, H., Crowne, F.J., Belenky, G.

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Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures von Cevher, Z., Folkes, P. A., Hier, H. S., VanMil, B. L., Connelly, B. C., Beck, W. A., Ren, Y. H.

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Molecular beam epitaxy control and photoluminescence properties of InAsBi von Svensson, S. P., Hier, H., Sarney, W. L., Donetsky, D., Wang, D., Belenky, G.

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GaAs quantum dot solar cell under concentrated radiation von Sablon, K., Li, Y., Vagidov, N., Mitin, V., Little, J. W., Hier, H., Sergeev, A.

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Background and interface electron populations in InAs0.58Sb0.42 von Svensson, S P, Crowne, F J, Hier, H S, Sarney, W L, Beck, W A, Lin, Y, Donetsky, D, Suchalkin, S, Belenky, G

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Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices von Lin, Y., Wang, D., Donetsky, D., Belenky, G., Hier, H., Sarney, W. L., Svensson, S. P.

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Dual-side Processed demultiplexer using grating-assisted codirectional coupler von Feng Liu, Hier, H., Worchesky, T.L.

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Structural and luminescent properties of bulk InAsSb von Sarney, W. L., Svensson, S. P., Hier, H., Kipshidze, G., Donetsky, D., Wang, D., Shterengas, L., Belenky, G.

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Background and interface electron populations in InAs 0.58 Sb 0.42 von Svensson, S P, Crowne, F J, Hier, H S, Sarney, W L, Beck, W A, Lin, Y, Donetsky, D, Suchalkin, S, Belenky, G

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Effect of barrier material on the two-dimensional electron gas in δ-doped GaInAs-based quantum wells von Lo, Ikai, Mitchel, W. C., Yu, P. W., Fathimulla, A., Hier, H.

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Multi-use, low SWaP, ultra-sensitive photoreceiver arrays for ladar & remote sensing von Aina, L., Fathimulla, A., Hier, H., Jiang, W., Foshee, J., Arnold, J.

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Monolithic photoreceiver technology for free space optical networks von Aina, L., Fathimulla, A., Hier, H., Foshee, J., Arnold, J.

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High-performance InAlAs/InGaAs HEMTs and MESFETs von Fathimulla, A., Abrahams, J., Loughran, T., Hier, H.

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Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs von Kuang, J.B., Tasker, P.J., Wang, G.W., Chen, Y.K., Eastman, L.F., Aina, O.A., Hier, H., Fathimulla, A.

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Diets of Lesser Scaup Breeding in Manitoba (Dieta de Individuos de Aythya Affinis que se Están Reproduciendo) von Afton, Alan D., Hier, Ross H.

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Bias circuit effects on the current-voltage characteristic of double-barrier tunneling structures: Experimental and theoretical results von Belhadj, C. Y., Martin, K. P., Ben Amor, S., Rascol, J. J. L., Higgins, R. J., Potter, R. C., Hier, H., Hempfling, E.

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Trajectory domains in a wide-well double-barrier tunneling structure in crossed electric and magnetic fields von MARTIN, K. P, BEN AMOR, S, RASCOL, J. J. L, HIGGINS, R. J, POTTER, R. C, HIER, H

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Submicron-gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxy von KUANG, J. B, TASKER, P. J, CHEN, Y. K, WANG, G. W, EASTMAN, L. F, AINA, O. A, HIER, H, FATHIMULLA, A

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DC and RF characteristics of doped multichannel AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As field effect transistors with variable gate-lengths von Dumka, D.C., Cueva, G., Hier, H., Aina, O.A., Adesida, I.

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DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47 As field effect transistors with variable gate-lengths von Dumka, D.C, Cueva, G, Hier, H, Aina, O.A, Adesida, I

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