Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser von Takano, Takayoshi, Narita, Yoshinobu, Horiuchi, Akihiko, Kawanishi, Hideo

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Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers von Kawanishi, Hideo, Senuma, Masanori, Nukui, Takeaki

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Extremely weak surface emission from (0001) c -plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region von Kawanishi, Hideo, Senuma, Masanori, Yamamoto, Mao, Niikura, Eiichiro, Nukui, Takeaki

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Carbon-doped p-type (0001) plane AlGaN (Al = 6-55%) with high hole density von Kawanishi, Hideo, Tomizawa, Tatsuya

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Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in AlxGa1−xN von Kawanishi, Hideo, Niikura, Eiichiro, Yamamoto, Mao, Takeda, Shoichiro

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Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission von Takano, Takayoshi, Kurimoto, Makoto, Yamamoto, Jun, Kawanishi, Hideo

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Improvement of Crystal Quality of AlGaN Multi Quantum Well Structure by Combination of Flow-Rate Modulation Epitaxy and AlN/GaN Multi-Buffer Layer and Resultant Lasing at Deep Ultr... von Takano, Takayoshi, Ohtaki, Yasuyuki, Narita, Yoshinobu, Kawanishi, Hideo

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Relationship between Excess Ga and Residual Oxides in Amorphous GaN Films Deposited by Compound Source Molecular Beam Epitaxy von Obinata, Naoyuki, Sugimoto, Koichi, Ijima, Kazuyuki, Ishibiki, Masaya, Egawa, Shinichi, Honda, Tohru, Kawanishi, Hideo

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GaN growth by compound source molecular beam epitaxy von Honda, Tohru, Sato, Kei, Hashimoto, Takanori, Shinohara, Masaki, Kawanishi, Hideo

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Excitonic emission of BGaN grown on (0 0 0 1) 6H–SiC by metal-organic vapor-phase epitaxy von Honda, Tohru, Kurimoto, Makoto, Shibata, Masao, Kawanishi, Hideo

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Anisotropic polarization characteristics of lasing and spontaneoussurface and edge emissions from deep-ultraviolet ( λ ≈ 240 nm ) AlGaN multiple-quantum-well lasers von Kawanishi, Hideo, Senuma, Masanori, Nukui, Takeaki

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Refractive indices of BxAl1−xN (x = 0-0.012) and ByGa1−yN (y = 0-0.023) epitaxial layers in ultraviolet region von Watanabe, Shunsuke, Takano, Takayohi, Jinen, Keisuke, Yamamoto, Jun, Kawanishi, Hideo

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Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in Al x Ga 1 − x N von Kawanishi, Hideo, Niikura, Eiichiro, Yamamoto, Mao, Takeda, Shoichiro

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Effect of piezo electric field on emission characteristics in GaN/AlGaN quantum wells von Honda, Tohru, Miyamoto, Tomoyuki, Sakaguchi, Takahiro, Kawanishi, Hideo, Koyama, Fumio, Iga, Kenichi

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Fine Epitaxial Growth of Monolayer-Stepped GaInAs/InP Quantum Wells by Metalorganic Molecular Beam Epitaxy von Hideo Kawanishi, Hideo Kawanishi, Hirokazu Ikeda, Hirokazu Ikeda

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Dependence of Crystal Quality on Residual Strain in Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy von Ishihara, Yoshiyuki, Yamamoto, Jun, Kurimoto, Makoto, Takano, Takayoshi, Honda, Tohru, Kawanishi, Hideo

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Method of fabricating a P type nitride semiconductor layer doped with carbon von Kawanishi Hideo

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Tensile Strain Introduced in AlN Layer Grown by Metal-Organic Vapor-Phase Epitaxy on (0001) 6H-SiC with (GaN/AlN) Buffer von Kurimoto, Makoto, Nakada, Toshiyuki, Ishihara, Yoshiyuki, Shibata, Masao, Honda, Tohru, Kawanishi, Hideo

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Reduction of Threading Dislocations in AlGaN/AlN/SiC Epitaxial Layers by Controlled Strain with (AlN/GaN) Multibuffer-Layer Structure von Murakawa, Kouichi, Niikura, Eiichirou, Hasegawa, Fumio, Kawanishi, Hideo

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Method for producing P-type nitride semiconductor layer von KAWANISHI HIDEO

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