High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs von Hickman, Austin, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Lee, Kevin, Xing, Huili Grace, Jena, Debdeep

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Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices von Bader, Samuel James, Lee, Hyunjea, Chaudhuri, Reet, Huang, Shimin, Hickman, Austin, Molnar, Alyosha, Xing, Huili Grace, Jena, Debdeep, Then, Han Wui, Chowdhury, Nadim, Palacios, Tomas

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Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures von Singhal, Jashan, Chaudhuri, Reet, Hickman, Austin, Protasenko, Vladimir, Xing, Huili Grace, Jena, Debdeep

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First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz von Hickman, Austin, Chaudhuri, Reet, Li, Lei, Nomoto, Kazuki, Bader, Samuel James, Hwang, James C. M., Xing, Huili Grace, Jena, Debdeep

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Anisotropic thermal conductivity in single crystal β-gallium oxide von Guo, Zhi, Verma, Amit, Wu, Xufei, Sun, Fangyuan, Hickman, Austin, Masui, Takekazu, Kuramata, Akito, Higashiwaki, Masataka, Jena, Debdeep, Luo, Tengfei

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GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz von Li, Lei, Nomoto, Kazuki, Pan, Ming, Li, Wenshen, Hickman, Austin, Miller, Jeffrey, Lee, Kevin, Hu, Zongyang, Bader, Samuel James, Lee, Soo Min, Hwang, James C.M., Jena, Debdeep, Xing, Huili Grace

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Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas von Bader, Samuel James, Chaudhuri, Reet, Nomoto, Kazuki, Hickman, Austin, Chen, Zhen, Then, Han Wui, Muller, David A., Xing, Huili Grace, Jena, Debdeep

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In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors von Chaudhuri, Reet, Hickman, Austin, Singhal, Jashan, Casamento, Joseph, Xing, Huili Grace, Jena, Debdeep

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Next generation electronics on the ultrawide-bandgap aluminum nitride platform von Hickman, Austin Lee, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Li, Lei, Hwang, James C. M., Xing, Huili Grace, Jena, Debdeep

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N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates von Kim, Eungkyun, Zhang, Zexuan, Encomendero, Jimy, Singhal, Jashan, Nomoto, Kazuki, Hickman, Austin, Wang, Cheng, Fay, Patrick, Toita, Masato, Jena, Debdeep, Xing, Huili Grace

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AlN/AlGaN/AlN quantum well channel HEMTs von Singhal, Jashan, Kim, Eungkyun, Hickman, Austin, Chaudhuri, Reet, Cho, Yongjin, Xing, Huili Grace, Jena, Debdeep

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InSitu Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors von Chaudhuri, Reet, Hickman, Austin, Singhal, Jashan, Casamento, Joseph, Xing, Huili Grace, Jena, Debdeep

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RF operation of AlN/Al0.25Ga0.75N/AlN HEMTs with f T /f max of 67/166 GHz von Kim, Eungkyun, Singhal, Jashan, Hickman, Austin, Li, Lei, Chaudhuri, Reet, Cho, Yongjin, Hwang, James C. M., Jena, Debdeep, Xing, Huili Grace

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RF operation of AlN/Al 0.25 Ga 0.75 N/AlN HEMTs with f T /f max of 67/166 GHz von Kim, Eungkyun, Singhal, Jashan, Hickman, Austin, Li, Lei, Chaudhuri, Reet, Cho, Yongjin, Hwang, James C. M., Jena, Debdeep, Xing, Huili Grace

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Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures von Wang, Xiaopeng, Fabi, Gianluca, Chaudhuri, Reet, Hickman, Austin, Asadi, Mohammad Javad, Nomoto, Kazuki, Xing, Huili Grace, Jena, Debdeep, Farina, Marco, Hwang, James C. M.

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Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures von Singhal, Jashan, Chaudhuri, Reet, Hickman, Austin, Protasenko, Vladimir, Xing, Huili Grace, Jena, Debdeep

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2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC von Hickman, Austin, Chaudhuri, Reet, Li, Lei, Nomoto, Kazuki, Moser, Neil, Elliott, Michael, Guidry, Matthew, Shinohara, Keisuke, Hwang, James C. M., Xing, Huili Grace, Jena, Debdeep

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Bottom tunnel junction blue light-emitting field-effect transistors von Bharadwaj, Shyam, Lee, Kevin, Nomoto, Kazuki, Hickman, Austin, van Deurzen, Len, Protasenko, Vladimir, Xing, Huili (Grace), Jena, Debdeep

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3 A/mm and 3 W/mm at 10 GHz von Hickman, Austin, Chaudhuri, Reet, Li, Lei, Nomoto, Kazuki, Bader, Samuel James, Hwang, James C M, Xing, Huili Grace, Jena, Debdeep

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RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages von Bader, Samuel James, Xing, Huili Grace, Chaudhuri, Reet, Hickman, Austin, Jena, Debdeep

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