Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width von Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido

Volltext

Bandgap opening in oxygen plasma-treated graphene von Nourbakhsh, Amirhasan, Cantoro, Mirco, Vosch, Tom, Pourtois, Geoffrey, Clemente, Francesca, van der Veen, Marleen H, Hofkens, Johan, Heyns, Marc M, De Gendt, Stefan, Sels, Bert F

Volltext

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates von Martens, K., Chi On Chui, Brammertz, G., De Jaeger, B., Kuzum, D., Meuris, M., Heyns, M., Krishnamohan, T., Saraswat, K., Maes, H.E., Groeseneken, G.

Volltext

Silicide Engineering to Boost Si Tunnel Transistor Drive Current von Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido

Volltext

Calibration of Bulk Trap-Assisted Tunneling and Shockley-Read-Hall Currents and Impact on InGaAs Tunnel-FETs von Smets, Quentin, Verhulst, Anne S., Simoen, Eddy, Gundlach, David, Richter, Curt, Collaert, Nadine, Heyns, Marc M.

Volltext

Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates von Verhulst, A.S., Vandenberghe, W.G., Maex, K., De Gendt, S., Heyns, M.M., Groeseneken, G.

Volltext

Fabrication and Analysis of a / Heterojunction Line Tunnel FET von Walke, Amey M., Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S., Kuo-Hsing Kao, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K., Heyns, Marc M., Collaert, Nadine, Thean, Aaron Voon-Yew

Volltext

The Role of Nonidealities in the Scaling of MoS2 FETs von Verreck, Devin, Arutchelvan, Goutham, Lockhart De La Rosa, Cesar J., Leonhardt, Alessandra, Chiappe, Daniele, Lu, Anh Khoa Augustin, Pourtois, Geoffrey, Matagne, Philippe, Heyns, Marc M., De Gendt, Stefan, Mocuta, Anda, Radu, Iuliana P.

Volltext

Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction von Smets, Quentin, Verhulst, Anne S., El Kazzi, Salim, Gundlach, David, Richter, Curt A., Mocuta, Anda, Collaert, Nadine, Thean, Aaron Voon-Yew, Heyns, Marc M.

Volltext

High-Performance Deep Submicron Ge pMOSFETs With Halo Implants von Nicholas, G., De Jaeger, B., Brunco, D.P., Zimmerman, P., Eneman, G., Martens, K., Meuris, M., Heyns, M.M.

Volltext

InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models von Smets, Quentin, Verreck, Devin, Verhulst, Anne S., Rooyackers, Rita, Merckling, Clément, Van De Put, Maarten, Simoen, Eddy, Vandervorst, Wilfried, Collaert, Nadine, Thean, Voon Y., Sorée, Bart, Groeseneken, Guido, Heyns, Marc M.

Volltext

Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions von Eneman, G., Wiot, M., Brugere, A., Casain, O.S.I., Sonde, S., Brunco, D.P., De Jaeger, B., Satta, A., Hellings, G., De Meyer, K., Claeys, C., Meuris, M., Heyns, M.M., Simoen, E.

Volltext

Single Layer vs Bilayer Graphene: A Comparative Study of the Effects of Oxygen Plasma Treatment on Their Electronic and Optical Properties von Nourbakhsh, Amirhasan, Cantoro, Mirco, Klekachev, Alexander V, Pourtois, Geoffrey, Vosch, Tom, Hofkens, Johan, van der Veen, Marleen H, Heyns, Marc M, De Gendt, Stefan, Sels, Bert F

Volltext

Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements von Walke, Amey M., Vandooren, Anne, Kaczer, Ben, Verhulst, Anne S., Rooyackers, Rita, Simoen, Eddy, Heyns, Marc M., Rao, V. Ramgopal, Groeseneken, Guido, Collaert, Nadine, Thean, Aaron Voon-Yew

Volltext

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors von Kao, Kuo-Hsing, Verhulst, Anne S., Rooyackers, Rita, Douhard, Bastien, Delmotte, Joris, Bender, Hugo, Richard, Olivier, Vandervorst, Wilfried, Simoen, Eddy, Hikavyy, Andriy, Loo, Roger, Arstila, Kai, Collaert, Nadine, Thean, Aaron, Heyns, Marc M., Meyer, Kristin De

Volltext

High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants von Hellings, G., Mitard, J., Eneman, G., De Jaeger, B., Brunco, D.P., Shamiryan, D., Vandeweyer, T., Meuris, M., Heyns, M.M., De Meyer, K.

Volltext

Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology von Eneman, G., De Jaeger, B., Simoen, E., Brunco, D.P., Hellings, G., Mitard, J., De Meyer, K., Meuris, M., Heyns, M.M.

Volltext

Electrical characterization of CNT contacts with Cu Damascene top contact von van der Veen, Marleen H., Vereecke, Bart, Huyghebaert, Cedric, Cott, Daire J., Sugiura, Masahito, Kashiwagi, Yusaku, Teugels, Lieve, Caluwaerts, Rudy, Chiodarelli, Nicolò, Vereecken, Philippe M., Beyer, Gerald P., Heyns, Marc M., De Gendt, Stefan, Tökei, Zsolt

Volltext

Atomic layer deposition of hafnium oxide on germanium substrates von Delabie, Annelies, Puurunen, Riikka L., Brijs, Bert, Caymax, Matty, Conard, Thierry, Onsia, Bart, Richard, Olivier, Vandervorst, Wilfried, Zhao, Chao, Heyns, Marc M., Meuris, Marc, Viitanen, Minna M., Brongersma, Hidde H., de Ridder, Marco, Goncharova, Lyudmila V., Garfunkel, Eric, Gustafsson, Torgny, Tsai, Wilman

Volltext

Soft breakdown of ultra-thin gate oxide layers von Depas, M., Nigam, T., Heyns, M.M.

Volltext