Oxidative enzyme activation of cellulose substrates for surface modification von Solhi, Laleh, Li, James, Li, Joyce, Heyns, Nathan M. I, Brumer, Harry

Volltext

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials von Heyns, M., Tsai, W.

Volltext

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates von Martens, K., Chi On Chui, Brammertz, G., De Jaeger, B., Kuzum, D., Meuris, M., Heyns, M., Krishnamohan, T., Saraswat, K., Maes, H.E., Groeseneken, G.

Volltext

Authentic leadership and flourishing: Do trust in the organization and organizational support matter during times of uncertainty? von Kleynhans, Deon J., Heyns, Marita M., Stander, Marius W.

Volltext

Social wellbeing profiles: associations with trust in managers and colleagues, job satisfaction, and intention to leave von Hennicks, Eugeny C, Heyns, Marita M, Rothmann, Sebastiaan

Volltext

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents von Delabie, A, Caymax, M, Groven, B, Heyne, M, Haesevoets, K, Meersschaut, J, Nuytten, T, Bender, H, Conard, T, Verdonck, P, Van Elshocht, S, De Gendt, S, Heyns, M, Barla, K, Radu, I, Thean, A

Volltext

Reduced Target-Resolution Strategy for Rapid Multi-Observer Site Location Optimisation von Heyns, Andries M.

Volltext

Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates von Verhulst, A.S., Vandenberghe, W.G., Maex, K., De Gendt, S., Heyns, M.M., Groeseneken, G.

Volltext

Switching mechanism in two-terminal vanadium dioxide devices von Radu, Iuliana P, Govoreanu, B, Mertens, S, Shi, X, Cantoro, M, Schaekers, M, Jurczak, M, De Gendt, S, Stesmans, A, Kittl, J A, Heyns, M, Martens, K

Volltext

Authentic Leadership, Trust (in the Leader), and Flourishing: Does Precariousness Matter? von Kleynhans, Deon J, Heyns, Marita M, Stander, Marius W, de Beer, Leon T

Volltext

Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature von Groven, B., Claes, D., Nalin Mehta, A., Bender, H., Vandervorst, W., Heyns, M., Caymax, M., Radu, I., Delabie, A.

Volltext

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6 von Gencarelli, F., Vincent, B., Souriau, L., Richard, O., Vandervorst, W., Loo, R., Caymax, M., Heyns, M.

Volltext

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition von Vincent, B., Gencarelli, F., Bender, H., Merckling, C., Douhard, B., Petersen, D. H., Hansen, O., Henrichsen, H. H., Meersschaut, J., Vandervorst, W., Heyns, M., Loo, R., Caymax, M.

Volltext

Optimisation of surveillance camera site locations and viewing angles using a novel multi-attribute, multi-objective genetic algorithm: A day/night anti-poaching application von Heyns, Andries M.

Volltext

Social well-being, job satisfaction, organisational citizenship behaviour and intentions to leave in a utility organisation von Hennicks, Eugeny, Heyns, Marita M., Rothmann, Sebastiaan

Volltext

Auroral, Ionospheric and Ground Magnetic Signatures of Magnetopause Surface Modes von Archer, M. O., Hartinger, M. D., Rastätter, L., Southwood, D. J., Heyns, M., Eggington, J.W.B., Wright, A. N., Plaschke, F., Shi, X.

Volltext

Positive non-linear capacitance: the origin of the steep subthreshold-slope in ferroelectric FETs von Alam, Md Nur K., Roussel, P., Heyns, M., Van Houdt, J.

Volltext

Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms von Verjauw, J., Acharya, R., Van Damme, J., Ivanov, Ts, Lozano, D. Perez, Mohiyaddin, F. A., Wan, D., Jussot, J., Vadiraj, A. M., Mongillo, M., Heyns, M., Radu, I., Govoreanu, B., Potočnik, A.

Volltext

Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering von Merckling, C., Waldron, N., Jiang, S., Guo, W., Collaert, N., Caymax, M., Vancoille, E., Barla, K., Thean, A., Heyns, M., Vandervorst, W.

Volltext

Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature von Groven, B, Claes, D, Nalin Mehta, A, Bender, H, Vandervorst, W, Heyns, M, Caymax, M, Radu, I, Delabie, A

Volltext