Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics von Zhong, Huicai, Heuss, Greg, Misra, Veena, Luan, Hongfa, Lee, Choong-Ho, Kwong, Dim-Lee

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Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices von Suh, You-Seok, Heuss, Greg, Misra, Veena

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Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2 von SUH, You-Seok, HEUSS, Greg P, MISRA, Veena, PARK, Dae-Gyu, LINN, Kwan-Yong

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Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2 von Misra, Veena, Heuss, Greg P., Zhong, Huicai

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Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS von Zhong, H., Heuss, G., Misra, V.

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Effect of the composition on the electrical properties of TaSixNy metal gate electrodes von Suh, You-Seok, Heuss, G.P, Lee, Jae-Hoon, Misra, V

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Use of metal{endash}oxide{endash}semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO{sub 2} and ZrO{sub 2} von Misra, Veena, Heuss, Greg P., Zhong, Huicai

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Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler–Nordheim current analysis von Suh, You-Seok, Heuss, Greg P., Misra, Veena

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Electrical properties of RuO sub(2) gate electrodes for dual metal gate Si-CMOS von Zhong, Huicai, Heuss, Greg, Misra, Veena

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Thermal Stability of TaSi[sub x]N[sub y] Films Deposited by Reactive Sputtering on SiO[sub 2] von Suh, You-Seok, Heuss, Greg P., Misra, Veena, Park, Dae-Gyu, Lim, Kwan-Yong

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Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics von HUICAI ZHONG, HEUSS, Greg, SUH, You-Seok, MISRA, Veena, HONG, Shin-Nam

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Electrical properties of Ru and RuO sub(2) gate electrodes for Si-PMOSFET with ZrO sub(2) and Zr-silicate dielectrics von Zhong, Huicai, Heuss, Greg, Suh, You-Seok, Misra, Veena, Hong, Shin-Nam

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Electrical properties of Ru and RuO2 gate electcrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics von Zhong, Huicai, Heuss, Greg, You-Seok Suh, Misra, Veena, Shin-Nam, Hong

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Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices von Huicai Zhong, Shin-Nam Hong, You-Seok Suh, Lazar, H., Heuss, G., Misra, V.

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Characteristics of TaSi x N y thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices von Suh, You-Seok, Heuss, Greg, Misra, Veena

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Tunable work function dual metal gate technology for bulk and non-bulk CMOS von JaeHoon Lee, Huicai Zhong, You-Seok Suh, Heuss, G., Gurganus, J., Bei Chen, Misra, V.

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Quality Assurance in Endoscopy Should Include Data on Sedation von Heuss, L. T., Beglinger, C.

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Improving value in the music products industry von Heuss, David M, Jarneteg, Bernt, Bedoya, Carlos, Taplin, Jerry, Stewart, Don, Nail, Chris, Slivinski, Al, Bichon, Franck, Parker, Jodi Ann, Vaugrenard, Gildas, Billings, Greg

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