Advantages of Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties von Feng, Wei, Hettiarachchi, Ranga, Sato, Soshi, Kakushima, Kuniyuki, Niwa, Masaaki, Iwai, Hiroshi, Yamada, Keisaku, Ohmori, Kenji

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Behavior of Low-Frequency Noise in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors for Different Impurity Concentrations von Hettiarachchi, Ranga, Matsuki, Takeo, Feng, Wei, Yamada, Keisaku, Ohmori, Kenji

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Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations von Hettiarachchi, Ranga, Matsuki, Takeo, Feng, Wei, Yamada, Keisaku, Ohmori, Kenji

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Interference Cancellation Technique Based on Discovery of Spreading Codes of Interference Signals and Maximum Correlation Detection for DS-CDMA System von HETTIARACHCHI, Ranga, YOKOYAMA, Mitsuo, UEHARA, Hideyuki

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Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO 2 /SiO 2 Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors von Matsuki, Takeo, Hettiarachchi, Ranga, Feng, Wei, Shiraishi, Kenji, Yamada, Keisaku, Ohmori, Kenji

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Effect of substrate bias on frequency dependence of MOSFET noise intensity von Ohmori, K., Hettiarachchi, R., Yamada, K.

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INTERFERENCE ELIMINATION SYSTEM AND DEVICE BY MAXIMUM CORRELATION VALUE PATTERN DETECTION von YOKOYAMA MITSUO, HETTIARACHCHI RANGA

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サブスレショールド領域におけるN-MOSFETの低周波雑音特性の評価 von 松木, 武雄, フェン, ウェイ, 山田, 啓作, 大毛利, 健治

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Curcumin loaded zinc oxide nanoparticles for activity-enhanced antibacterial and anticancer applications von Perera, W. P. T. D, Dissanayake, Ranga K, Ranatunga, U. I, Hettiarachchi, N. M, Perera, K. D. C, Unagolla, Janitha M, De Silva, R. T, Pahalagedara, L. R

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