Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experiments von Lambert, M F, Goffman, M F, Bourgoin, J P, Hesto, P

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Scaling law in carbon nanotube electromechanical devices von LEFEVRE, R, GOFFMAN, M. F, DERYCKE, V, MIKO, C, FORRO, L, BOURGOIN, J. P, HESTO, P

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Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells von Bournel, A., Dollfus, P., Cassan, E., Hesto, P.

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Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation von Cassan, E., Galdin, S., Dollfus, P., Hesto, P.

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From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters von Sée, J., Dollfus, P., Galdin, S., Hesto, P.

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Semiclassical and wave-mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultrathin oxides von Cassan, E, Dollfus, P, Galdin, S, Hesto, P

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Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation von Dollfus, P., Bournel, A., Galdin, S., Barraud, S., Hesto, P.

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Gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas von Bournel, A., Dollfus, P., Bruno, P., Hesto, P.

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Electronic properties of semiconductor quantum dots for Coulomb blockade applications von Sée, J, Dollfus, P, Galdin, S, Hesto, P

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Theoretical and experimental considerations on the spin field effect transistor von Bournel, A, Delmouly, V, Dollfus, P, Tremblay, G, Hesto, P

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Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution von Barraud, S., Dollfus, P., Galdin, S., Hesto, P.

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Semiclassical and wave mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultra-thin oxides von Cassan, E., Dollfus, P., Galdin, S., Hesto, P.

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Spin Polarized Transport in 1D and 2D Semiconductor Heterostructures von Hesto, P., Dollfus, P., Bruno, P., Bournel, A.

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Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs von Cassan, E, Dollfus, P, Galdin, S, Hesto, P

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Physical and magnetic properties of Co-oxide-GaAs contacts von Delmouly, V., Bournel, A., Tremblay, G., Hesto, P.

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Spin-dependent transport phenomena in a HEMT von Bournel, A, Dollfus, P, Bruno, P, Hesto, P

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Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy (y ≤0.03) von Dollfus, Ph, Galdin, S., Hesto, P.

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Modelling of gate-induced spin precession in a striped channel high electron mobility transistor von Bournel, A, Dollfus, P, Galdin, S, Musalem, F.-X, Hesto, P

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Characterisation of a low-voltage actuated gold microswitch von Attia, P, Tremblay, G, Laval, R, Hesto, P

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A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon von Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessenne, F., Dollfus, P., Dutton, R., Engl, W.L., Fauquembergue, R., Fiegna, C., Fischetti, M.V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., Higman, J.M., Iizuka, T., Jungemann, C., Kamakura, Y., Kosina, H., Kunikiyo, T., Laux, S.E., Hongchin Lin, Maziar, C., Mizuno, H., Peifer, H.J., Ramaswamy, S., Sano, N., Scrobohaci, P.G., Selberherr, S., Takenaka, M., Ting-Wei Tang, Taniguchi, K., Thobel, J.L., Thoma, R., Tomizawa, K., Tomizawa, M., Vogelsang, T., Shiuh-Luen Wang, Xiaolin Wang, Chiang-Sheng Yao, Yoder, P.D., Yoshii, A.

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