Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection von Zhang, Shuailong, Xie, Enyuan, Yan, Tongxing, Yang, Wei, Herrnsdof, Johannes, Gong, Zheng, Watson, Ian M., Gu, Erdan, Dawson, Martin D., Hu, Xiaodong

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Hole transport assisted by the piezoelectric field in In{sub 0.4}Ga{sub 0.6}N/GaN quantum wells under electrical injection von Zhang, Shuailong, Gu, Erdan, Joint Laboratory of Advanced Optoelectronic Materials and Devices, State Key Laboratory, Wuhan University of Technology, Wuhan 430070, China and Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, Xie, Enyuan, Herrnsdof, Johannes, Gong, Zheng, Watson, Ian M., Dawson, Martin D., Yan, Tongxing, Yang, Wei, Hu, Xiaodong

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