Growth mechanisms of GaN microrods for 3D core-shell LEDs: The influence of silane flow von Hartmann, Jana, Wang, Xue, Schuhmann, Henning, Dziony, Wanja, Caccamo, Lorenzo, Ledig, Johannes, Mohajerani, Matin Sadat, Schimpke, Tilman, Bähr, Markus, Lilienkamp, Gerhard, Daum, Winfried, Seibt, Michael, Straßburg, Martin, Wehmann, Hergo-Heinrich, Waag, Andreas

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Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy von Janicki, Łukasz, Mohajerani, Matin Sadat, Hartmann, Jana, Zdanowicz, Ewelina, Wehmann, Hergo-Heinrich, Waag, Andreas, Kudrawiec, Robert

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3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices von Hartmann, Jana, Manglano Clavero, Irene, Nicolai, Lars, Margenfeld, Christoph, Spende, Hendrik, Ledig, Johannes, Zhou, Hao, Steib, Frederik, Jaros, Angelina, Avramescu, Adrian, Strassburg, Martin, Trampert, Achim, Wehmann, Hergo‐Heinrich, Lugauer, Hans‐Jürgen, Voss, Tobias, Waag, Andreas

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Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures von Wang, Xue, Li, Shunfeng, Mohajerani, Matin Sadat, Ledig, Johannes, Wehmann, Hergo-Heinrich, Mandl, Martin, Strassburg, Martin, Steegmüller, Ulrich, Jahn, Uwe, Lähnemann, Jonas, Riechert, Henning, Griffiths, Ian, Cherns, David, Waag, Andreas

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Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods von Schmidt, Gordon, Müller, Marcus, Veit, Peter, Metzner, Sebastian, Bertram, Frank, Hartmann, Jana, Zhou, Hao, Wehmann, Hergo-Heinrich, Waag, Andreas, Christen, Jürgen

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Band Engineered Epitaxial 3D GaN-InGaN Core–Shell Rod Arrays as an Advanced Photoanode for Visible-Light-Driven Water Splitting von Caccamo, Lorenzo, Hartmann, Jana, Fàbrega, Cristian, Estradé, Sonia, Lilienkamp, Gerhard, Prades, Joan Daniel, Hoffmann, Martin W. G, Ledig, Johannes, Wagner, Alexander, Wang, Xue, Lopez-Conesa, Lluis, Peiró, Francesca, Rebled, José Manuel, Wehmann, Hergo-Heinrich, Daum, Winfried, Shen, Hao, Waag, Andreas

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Surface photovoltage behavior of GaN columns von Deeb, Manal Ali, Wei, Jiandong, Hartmann, Jana, Wehmann, Hergo-Heinrich, Waag, Andreas

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Characterization of the internal properties of InGaN/GaN core-shell LEDs von Ledig, Johannes, Wang, Xue, Fündling, Sönke, Schuhmann, Henning, Seibt, Michael, Jahn, Uwe, Wehmann, Hergo-Heinrich, Waag, Andreas

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Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE von Li, Shunfeng, Wang, Xue, Mohajerani, Matin Sadat, Fündling, Sönke, Erenburg, Milena, Wei, Jiandong, Wehmann, Hergo-Heinrich, Waag, Andreas, Mandl, Martin, Bergbauer, Werner, Strassburg, Martin

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Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale von Wolter, Stefan, Spende, Hendrik, Gülink, Jan, Hartmann, Jana, Wehmann, Hergo-Heinrich, Waag, Andreas, Lex, Andreas, Avramescu, Adrian, Lugauer, Hans-Jürgen, Malm, Norwin von, Drolet, Jean-Jacques, Strassburg, Martin

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Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel von Strempel, Klaas, Römer, Friedhard, Yu, Feng, Meneghini, Matteo, Bakin, Andrey, Wehmann, Hergo-Heinrich, Witzigmann, Bernd, Waag, Andreas

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Photo-assisted Kelvin probe force microscopy investigation of three dimensional GaN structures with various crystal facets, doping types, and wavelengths of illumination von Ali Deeb, Manal, Ledig, Johannes, Wei, Jiandong, Wang, Xue, Wehmann, Hergo-Heinrich, Waag, Andreas

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Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In,Ga)N/GaN rod light-emitting diodes von Krause, Thilo, Hanke, Michael, Cheng, Zongzhe, Niehle, Michael, Trampert, Achim, Rosenthal, Martin, Burghammer, Manfred, Ledig, Johannes, Hartmann, Jana, Zhou, Hao, Wehmann, Hergo-Heinrich, Waag, Andreas

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Defect generation by nitrogen during pulsed sputter deposition of GaN von Steib, Frederik, Remmele, Thilo, Gülink, Jan, Fündling, Sönke, Behres, Alexander, Wehmann, Hergo-Heinrich, Albrecht, Martin, Straßburg, Martin, Lugauer, Hans-Jürgen, Waag, Andreas

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High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy von Hartmann, Jana, Steib, Frederik, Zhou, Hao, Ledig, Johannes, Fündling, Sönke, Albrecht, Friederike, Schimpke, Tilman, Avramescu, Adrian, Varghese, Tansen, Wehmann, Hergo-Heinrich, Straßburg, Martin, Lugauer, Hans-Jürgen, Waag, Andreas

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Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls von Hartmann, Jana, Steib, Frederik, Zhou, Hao, Ledig, Johannes, Nicolai, Lars, Fündling, Sönke, Schimpke, Tilman, Avramescu, Adrian, Varghese, Tansen, Trampert, Achim, Straßburg, Martin, Lugauer, Hans-Jürgen, Wehmann, Hergo-Heinrich, Waag, Andreas

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Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions von Li, Shunfeng, Fündling, Sönke, Wang, Xue, Erenburg, Milena, Al-Suleiman, Mohamed Aid Mansur, Wei, Jiandong, Bergbauer, Werner, Strassburg, Martin, Wehmann, Hergo-Heinrich, Waag, Andreas

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Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs von Fündling, Sönke, Li, Shunfeng, Sökmen, Ünsal, Merzsch, Stephan, Hinze, Peter, Weimann, Thomas, Jahn, Uwe, Trampert, Achim, Riechert, Henning, Peiner, Erwin, Wehmann, Hergo-Heinrich, Waag, Andreas

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Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures von Vogt, Angelina, Hartmann, Jana, Zhou, Hao, Mohajerani, Matin Sadat, Fündling, Sönke, Szafranski, Barbara, Wehmann, Hergo-Heinrich, Waag, Andreas, Voss, Tobias, Schimpke, Tilman, Avramescu, Adrian, Strassburg, Martin

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Towards nanorod LEDs: Numerical predictions and controlled growth von Kölper, Christopher, Bergbauer, Werner, Drechsel, Philipp, Sabathil, Matthias, Straßburg, Martin, Lugauer, Hans-Jürgen, Witzigmann, Bernd, Fündling, Sönke, Li, Shunfeng, Wehmann, Hergo-Heinrich, Waag, Andreas

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