The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices von Heo, Sungho, Chang, Man, Ju, Yongkyu, Jung, Seungjae, Hwang, Hyunsang

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Characteristics of HfO/sub 2/ pMOSFET prepared by B/sub 2/H/sub 6/ plasma doping and KrF excimer laser annealing von Baek, Sungkweon, Heo, Sungho, Choi, Haejung, Hwang, Hyunsang

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Characteristics of HfO2 pMOSFET prepared by B2H6 plasma doping and KrF excimer laser annealing von Baek, Sungkweon, Heo, Sungho, Choi, Haejung, Hwang, Hyunsang

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Effective Work Function of Scandium Nitride Gate Electrodes on SiO 2 and HfO 2 von Yang, Hyundoek, Heo, Sungho, Lee, Dongkyu, Choi, Sangmoo, Hwang, Hyunsang

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Pre-annealing effects of n+/p and p+/n junction formed by plasma doping (PLAD) and laser annealing von Heo, Sungho, Baek, Sungkweon, Lee, Dongkyu, Hasan, Musarrat, Hwang, Hyunsang

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The effect of excimer laser annealing on ZnO nanowires and their field effect transistors von Maeng, Jongsun, Heo, Sungho, Jo, Gunho, Choe, Minhyeok, Kim, Seonghyun, Hwang, Hyunsang, Lee, Takhee

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Ultrashallow (<10nm) p+∕n junction formed by B18H22 cluster ion implantation and excimer laser annealing von Heo, Sungho, Hwang, Hyunsang, Cho, H. T., Krull, W. A.

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The effect of KrF laser annealing within an ultrashort time onmetal-alumina-nitride-oxide-silicon-type flash memory devices von Heo, Sungho, Chang, Man, Ju, Yongkyu, Jung, Seungjae, Hwang, Hyunsang

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Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam von Kim, Sung Woo, Park, Byoung Jae, Kang, Se Koo, Kong, Bo Hyun, Cho, Hyung Koun, Yeom, Geun Young, Heo, Sungho, Hwang, Hyunsang

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Ultrashallow ( < 10 nm ) p + ∕ n junction formed by B 18 H 22 cluster ion implantation and excimer laser annealing von Heo, Sungho, Hwang, Hyunsang, Cho, H. T., Krull, W. A.

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Characteristics of Al 2 O 3 gate dielectrics partially fluorinated by a low energy fluorine beam von Kim, Sung Woo, Park, Byoung Jae, Kang, Se Koo, Kong, Bo Hyun, Cho, Hyung Koun, Yeom, Geun Young, Heo, Sungho, Hwang, Hyunsang

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Ultra-shallow Junction Formed by Plasma Doping and Laser Annealing von Sungho Heo, Hyunsang Hwang

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Characteristics of HfO(2) pMOSFET prepared by B(2)H(6) plasma doping and KrF excimer laser annealing von Baek, Sungkweon, Heo, Sungho, Choi, Haejung, Hwang, Hyunsang

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Ultrashallow (<10 nm) p{sup +}/n junction formed by B{sub 18}H{sub 22} cluster ion implantation and excimer laser annealing von Heo, Sungho, Hwang, Hyunsang, Cho, H. T., Krull, W. A., SemEquip, Inc., 34 Sullivan Road, Billerica, Massachusetts 01862

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Characteristics of HfO sub(2) pMOSFET prepared by B sub(2)H sub(6) plasma doping and KrF excimer laser annealing von Baek, Sungkweon, Heo, Sungho, Choi, Haejung, Hwang, Hyunsang

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Ultrashallow Arsenic n + /p Junction Formed by AsH 3 Plasma Doping von Heo, Sungho, Baek, Sungkweon, Lee, Dongkyu, Buh, Gyongho, Shin, Yugyun, Hwang, Hyunsang

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Ultrashallow P+/n junction formed by B18H22+ Ion Implantation and Excimer Laser Annealing von Heo, Sungho, Lee, Dongkyu, Cho, H T, Krull, W A, Hwang, Hyunsang

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Characteristics of ultrashallow p+/n junction prepared cluster boron (B18H22) ion implantation and excimer laser annealing von Sungho Heo, Seokjoon Oh, Musarrat Hasan, Cho, H.T., Krull, W.A., Hyunsang Hwang

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Sub-15 nm n[sup +]∕p-Germanium Shallow Junction Formed by PH[sub 3] Plasma Doping and Excimer Laser Annealing von Heo, Sungho, Baek, Sungkweon, Lee, Dongkyu, Hasan, Musarrat, Jung, Hyungsuk, Lee, Jongho, Hwang, Hyunsang

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Electrical Characteristics of LaAlO[sub 3] Gate Dielectrics Prepared by High-Pressure Hydrogen Post-Deposition Annealing von Hasan, Musarrat, Jo, Min Seok, Rahman, Md. Shahriar, Choi, Hyejong, Heo, Sungho, Hwang, Hyunsang

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