Effects of plasma activation on hydrophilic bonding of Si and SiO2 von SUNI, T, HENTTINEN, K, SUNI, I, MÄKINEN, J

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Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors von Prunnila, M., Ahopelto, J., Henttinen, K., Gamiz, F.

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Wafer Scale Packaging of MEMS by Using Plasma-Activated Wafer Bonding von Suni, T., Henttinen, K., Lipsanen, A., Dekker, J., Luoto, H., Kulawski, M.

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Mechanically induced Si layer transfer in hydrogen-implanted Si wafers von Henttinen, K., Suni, I., Lau, S. S.

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Direct Bonding of Thick Film Polysilicon to Glass Substrates von Luoto, H., Suni, T., Henttinen, K., Kulawski, M.

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Silicon-on-Insulator Wafers with Buried Cavities von Suni, T., Henttinen, K., Dekker, J., Luoto, H., Kulawski, M., Mäkinen, J., Mutikainen, R.

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Single crystal Si layers on glass formed by ion cutting von Cai, M., Qiao, D., Yu, L. S., Lau, S. S., Li, C. P., Hung, L. S., Haynes, Tony E., Henttinen, K., Suni, Ilkka, Poon, V. M. C., Marek, T., Mayer, J. W.

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Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers von Höchbauer, T., Misra, A., Nastasi, M., Henttinen, K., Suni, T., Suni, I., Lau, S.S., Ensinger, W.

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Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique von Xuejie Shi, Henttinen, K., Suni, T., Suni, I., Man Wong

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Silicon layer transfer using plasma hydrogenation von Chen, Peng, Lau, S. S., Chu, Paul K., Henttinen, K., Suni, T., Suni, I., Theodore, N. David, Alford, T. L., Mayer, J. W., Shao, Lin, Nastasi, M.

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Microwave-cut silicon layer transfer von Thompson, D. C., Alford, T. L., Mayer, J. W., Hochbauer, T., Nastasi, M., Lau, S. S., Theodore, N. David, Henttinen, K., Suni, llkka, Chu, Paul K.

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Ion beam studies of hydrogen implanted Si wafers von Nurmela, A., Henttinen, K., Suni, T., Tolkki, A., Suni, I.

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Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass von Xuejie Shi, Henttinen, K., Suni, T., Suni, I., Lau, S.S., Man Wong

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Low-temperature bonding of thick-film polysilicon for microelectromechanical system (MEMS) von LUOTO, H, SUNI, T, KULAWSKI, M, HENTTINEN, K, KATTELUS, H

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Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers von Yu, L. S., Mages, P., Qiao, D., Jia, L., Yu, P. K. L., Lau, S. S., Suni, T., Henttinen, K., Suni, I.

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Effects of Plasma Activation on Hydrophilic Bonding of Si and SiO[sub 2] von Suni, T., Henttinen, K., Suni, I., Mäkinen, J.

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Influence of hydrogen dose and boron doping on the ion cutting of Si von Nurmela, A., Henttinen, K., Suni, T., Suni, I.

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Cold ion-cutting of hydrogen implanted Si von Henttinen, K., Suni, T., Nurmela, A., Suni, I., Lau, S.S., Höchbauer, T., Nastasi, M., Airaksinen, V.-M.

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The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process von Höchbauer, T., Nastasi, M., Verda, R.D., Misra, A., Henttinen, K., Suni, I., Lau, S.S., Mayer, J.W.

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Transfer of thin Si layers by cold and thermal ion cutting von HENTTINEN, K, SUNI, T, NURMELA, A, LUOTO, H. V. A, SUNI, I, AIRAKSINEN, V.-M, KARIRINNE, S, CAI, M, LAU, S. S

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