Vector Substrates: Idea, Design, and Realization von Harbola, Varun, Wu, Yu‐Jung, Hensling, Felix V. E., Wang, Hongguang, Aken, Peter A., Mannhart, Jochen

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Unraveling the enhanced Oxygen Vacancy Formation in Complex Oxides during Annealing and Growth von Hensling, Felix V. E., Xu, Chencheng, Gunkel, Felix, Dittmann, Regina

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Trade-off between variability and retention of memristive epitaxial SrTiO3 devices von Rieck, Jan L., Hensling, Felix V. E., Dittmann, Regina

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Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy von Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, Chang, Celesta S., Turner, David, Park, Jisung, McCandless, Jonathan P., Paik, Hanjong, Bocklund, Brandon J., Hoffman, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G., Mou, Shin, Muller, David A., Shang, Shun-Li, Liu, Zi-Kui, Schlom, Darrell G.

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Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices von Hensling, Felix V. E., Du, Hongchu, Raab, Nicolas, Jia, Chun-Lin, Mayer, Joachim, Dittmann, Regina

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α-Ta films on c-plane sapphire with enhanced microstructure von Majer, Lena N., Smink, Sander, Braun, Wolfgang, Fenk, Bernhard, Harbola, Varun, Stuhlhofer, Benjamin, Wang, Hongguang, van Aken, Peter A., Mannhart, Jochen, Hensling, Felix V. E.

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Nitride thin films grown by thermal laser epitaxy von Kim, Dong Yeong, Harbola, Varun, Jung, Seungwon, Lee, Jinjoo, Roy, Sukanya, Hensling, Felix V. E., Majer, Lena N., Wang, Hongguang, van Aken, Peter A., Lopes, Joao Marcelo J., Aggarwal, Neha, Mannhart, Jochen, Braun, Wolfgang

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Growth of PdCoO2 films with controlled termination by molecular-beam epitaxy and determination of their electronic structure by angle-resolved photoemission spectroscopy von Song, Qi, Sun, Jiaxin, Parzyck, Christopher T., Miao, Ludi, Xu, Qing, Hensling, Felix V. E., Barone, Matthew R., Hu, Cheng, Kim, Jinkwon, Faeth, Brendan D., Paik, Hanjong, King, Phil D. C., Shen, Kyle M., Schlom, Darrell G.

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Adsorption-controlled growth of homoepitaxial c-plane sapphire films von Majer, Lena N., Acartürk, Tolga, van Aken, Peter A., Braun, Wolfgang, Camuti, Luca, Eckl-Haese, Johan, Mannhart, Jochen, Onuma, Takeyoshi, Rabinovich, Ksenia S., Schlom, Darrell G., Smink, Sander, Starke, Ulrich, Steele, Jacob, Vogt, Patrick, Wang, Hongguang, Hensling, Felix V. E.

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Epitaxial stannate pyrochlore thin films: Limitations of cation stoichiometry and electron doping von Hensling, Felix V. E., Dahliah, Diana, Dulal, Prabin, Singleton, Patrick, Sun, Jiaxin, Schubert, Jürgen, Paik, Hanjong, Subedi, Indra, Subedi, Biwas, Rignanese, Gian-Marco, Podraza, Nikolas J., Hautier, Geoffroy, Schlom, Darrell G.

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Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy von Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

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Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)] von Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, Chang, Celesta S., Turner, David, Park, Jisung, McCandless, Jonathan P., Paik, Hanjong, Bocklund, Brandon J., Hoffmann, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G., Mou, Shin, Muller, David A., Shang, Shun-Li, Liu, Zi-Kui, Schlom, Darrell G.

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Growth of high-quality ruthenium films on sapphire von Majer, Lena N., Smink, Sander, Braun, Wolfgang, Wang, Hongguang, van Aken, Peter A., Mannhart, Jochen, Hensling, Felix V. E.

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Why thermal laser epitaxy aluminum sources yield reproducible fluxes in oxidizing environments von Smart, Thomas J., Hensling, Felix V. E., Kim, Dong Yeong, Majer, Lena N., Suyolcu, Y. Eren, Dereh, Dominik, Schlom, Darrell G., Jena, Debdeep, Mannhart, Jochen, Braun, Wolfgang

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Epitaxial growth of the first two members of the Ban+1InnO2.5n+1 Ruddlesden–Popper homologous series von Hensling, Felix V. E., Smeaton, Michelle A., Show, Veronica, Azizie, Kathy, Barone, Matthew R., Kourkoutis, Lena F., Schlom, Darrell G.

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Epitaxial growth of the first two members of the Ba n +1In n O2.5 n +1 Ruddlesden–Popper homologous series von Hensling, Felix V. E., Smeaton, Michelle A., Show, Veronica, Azizie, Kathy, Barone, Matthew R., Kourkoutis, Lena F., Schlom, Darrell G.

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Extending the Kinetic and Thermodynamic Limits of Molecular-Beam Epitaxy Utilizing Suboxide Sources or Metal-Oxide-Catalyzed Epitaxy von Vogt, Patrick, Hensling, Felix V.E., Azizie, Kathy, McCandless, Jonathan P., Park, Jisung, DeLello, Kursti, Muller, David A., Xing, Huili G., Jena, Debdeep, Schlom, Darrell G.

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Silicon-doped β -Ga2O3 films grown at 1 µ m/h by suboxide molecular-beam epitaxy von Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

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Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy von Hensling, Felix V.E., Vogt, Patrick, Park, Jisung, Shang, Shun‐Li, Ye, Huacheng, Wu, Yu‐Mi, Smith, Kathleen, Show, Veronica, Azizie, Kathy, Paik, Hanjong, Jena, Debdeep, Xing, Huili G., Suyolcu, Y. Eren, van Aken, Peter A., Datta, Suman, Liu, Zi‐Kui, Schlom, Darrell G.

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Canonical approach to cation flux calibration in oxide molecular-beam epitaxy von Sun, Jiaxin, Parzyck, Christopher T., Lee, June H., Brooks, Charles M., Kourkoutis, Lena F., Ke, Xianglin, Misra, Rajiv, Schubert, Jürgen, Hensling, Felix V., Barone, Matthew R., Wang, Zhe, Holtz, Megan E., Schreiber, Nathaniel J., Song, Qi, Paik, Hanjong, Heeg, Tassilo, Muller, David A., Shen, Kyle M., Schlom, Darrell G.

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