Vector Substrates: Idea, Design, and Realization von Harbola, Varun, Wu, Yu‐Jung, Hensling, Felix V. E., Wang, Hongguang, Aken, Peter A., Mannhart, Jochen

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Unraveling the enhanced Oxygen Vacancy Formation in Complex Oxides during Annealing and Growth von Hensling, Felix V. E., Xu, Chencheng, Gunkel, Felix, Dittmann, Regina

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Trade-off between variability and retention of memristive epitaxial SrTiO3 devices von Rieck, Jan L., Hensling, Felix V. E., Dittmann, Regina

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Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy von Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, Chang, Celesta S., Turner, David, Park, Jisung, McCandless, Jonathan P., Paik, Hanjong, Bocklund, Brandon J., Hoffman, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G., Mou, Shin, Muller, David A., Shang, Shun-Li, Liu, Zi-Kui, Schlom, Darrell G.

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α-Ta films on c-plane sapphire with enhanced microstructure von Majer, Lena N., Smink, Sander, Braun, Wolfgang, Fenk, Bernhard, Harbola, Varun, Stuhlhofer, Benjamin, Wang, Hongguang, van Aken, Peter A., Mannhart, Jochen, Hensling, Felix V. E.

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Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices von Hensling, Felix V. E., Du, Hongchu, Raab, Nicolas, Jia, Chun-Lin, Mayer, Joachim, Dittmann, Regina

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Nitride thin films grown by thermal laser epitaxy von Kim, Dong Yeong, Harbola, Varun, Jung, Seungwon, Lee, Jinjoo, Roy, Sukanya, Hensling, Felix V. E., Majer, Lena N., Wang, Hongguang, van Aken, Peter A., Lopes, Joao Marcelo J., Aggarwal, Neha, Mannhart, Jochen, Braun, Wolfgang

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Adsorption-controlled growth of homoepitaxial c-plane sapphire films von Majer, Lena N., Acartürk, Tolga, van Aken, Peter A., Braun, Wolfgang, Camuti, Luca, Eckl-Haese, Johan, Mannhart, Jochen, Onuma, Takeyoshi, Rabinovich, Ksenia S., Schlom, Darrell G., Smink, Sander, Starke, Ulrich, Steele, Jacob, Vogt, Patrick, Wang, Hongguang, Hensling, Felix V. E.

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Growth of PdCoO2 films with controlled termination by molecular-beam epitaxy and determination of their electronic structure by angle-resolved photoemission spectroscopy von Song, Qi, Sun, Jiaxin, Parzyck, Christopher T., Miao, Ludi, Xu, Qing, Hensling, Felix V. E., Barone, Matthew R., Hu, Cheng, Kim, Jinkwon, Faeth, Brendan D., Paik, Hanjong, King, Phil D. C., Shen, Kyle M., Schlom, Darrell G.

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Epitaxial stannate pyrochlore thin films: Limitations of cation stoichiometry and electron doping von Hensling, Felix V. E., Dahliah, Diana, Dulal, Prabin, Singleton, Patrick, Sun, Jiaxin, Schubert, Jürgen, Paik, Hanjong, Subedi, Indra, Subedi, Biwas, Rignanese, Gian-Marco, Podraza, Nikolas J., Hautier, Geoffroy, Schlom, Darrell G.

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Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy von Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

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Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)] von Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, Chang, Celesta S., Turner, David, Park, Jisung, McCandless, Jonathan P., Paik, Hanjong, Bocklund, Brandon J., Hoffmann, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G., Mou, Shin, Muller, David A., Shang, Shun-Li, Liu, Zi-Kui, Schlom, Darrell G.

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Growth of PdCoO 2 films with controlled termination by molecular-beam epitaxy and determination of their electronic structure by angle-resolved photoemission spectroscopy von Song, Qi, Sun, Jiaxin, Parzyck, Christopher T., Miao, Ludi, Xu, Qing, Hensling, Felix V. E., Barone, Matthew R., Hu, Cheng, Kim, Jinkwon, Faeth, Brendan D., Paik, Hanjong, King, Phil D. C., Shen, Kyle M., Schlom, Darrell G.

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Growth of high-quality ruthenium films on sapphire von Majer, Lena N., Smink, Sander, Braun, Wolfgang, Wang, Hongguang, van Aken, Peter A., Mannhart, Jochen, Hensling, Felix V. E.

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Epitaxial growth of the first two members of the Ban+1InnO2.5n+1 Ruddlesden–Popper homologous series von Hensling, Felix V. E., Smeaton, Michelle A., Show, Veronica, Azizie, Kathy, Barone, Matthew R., Kourkoutis, Lena F., Schlom, Darrell G.

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Why thermal laser epitaxy aluminum sources yield reproducible fluxes in oxidizing environments von Smart, Thomas J., Hensling, Felix V. E., Kim, Dong Yeong, Majer, Lena N., Suyolcu, Y. Eren, Dereh, Dominik, Schlom, Darrell G., Jena, Debdeep, Mannhart, Jochen, Braun, Wolfgang

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Epitaxial growth of the first two members of the Ba n +1In n O2.5 n +1 Ruddlesden–Popper homologous series von Hensling, Felix V. E., Smeaton, Michelle A., Show, Veronica, Azizie, Kathy, Barone, Matthew R., Kourkoutis, Lena F., Schlom, Darrell G.

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SrTiO$_3$ termination control: A method to tailor the oxygen exchange kinetics von Hensling, Felix V. E, Baeumer, Christoph, Rose, Marc-André, Gunkel, Felix, Dittmann, Regina

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Extending the Kinetic and Thermodynamic Limits of Molecular-Beam Epitaxy Utilizing Suboxide Sources or Metal-Oxide-Catalyzed Epitaxy von Vogt, Patrick, Hensling, Felix V.E., Azizie, Kathy, McCandless, Jonathan P., Park, Jisung, DeLello, Kursti, Muller, David A., Xing, Huili G., Jena, Debdeep, Schlom, Darrell G.

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Silicon-doped β -Ga2O3 films grown at 1 µ m/h by suboxide molecular-beam epitaxy von Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

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