UNIVERSAL NON-POLAR SWITCHING IN CARBON-DOPED TRANSITION METAL OXIDES (TMO) AND POST TMO von Paz de Araujo, Carlos A, Celinska, Jolanta, McWilliams, Chris R, Shifren, Lucian, Yeric, Greg, Henry Huang, X.M, Suryavanshi, Saurabh Vinayak, Rosendale, Glen, Afanasiev, Valeri, Marino, Eduardo C, Narayan, Dushyant Madhav, Dessau, Daniel S

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Mechanical nano-resonators at ultra-high frequency and their potential applications von Sun, Bohua, Huang, X.M. Henry

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Electrostatic Discharge Protection Devices Using Carbon-Based Diodes von BERTIN, Claude L, CLEAVELIN, C. Rinn, RUECKES, Thomas, HUANG, X.M. Henry

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Non-Linear Resistive Change Memory Cells and Arrays von BERTIN, Claude L, CLEAVELIN, C. Rinn, RUECKES, Thomas, HUANG, X.M. Henry

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Nonvolatile Nanotube Memory Arrays using Nonvolatile Nanotube Blocks and Cell Selection Transistors von Sivarajan, Ramesh A, Rueckes, Thomas, Bertin, Claude L, Huang, X.M. Henry

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Methods for Forming Crosspoint Arrays of Resistive Change Memory Cells von BERTIN, Claude L, CLEAVELIN, C. Rinn, RUECKES, Thomas, HUANG, X.M. Henry

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Nonvolatile Nanotube Switch Elements Using Sidewall Contacts von KONSEK, Steven L, BERTIN, Claude L, RUECKES, Thomas, SIVARAJAN, Ramesh, Ghenciu, Eliodor G, MEINHOLD, Mitchell, HUANG, X.M. Henry

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MEMORY ELEMENTS AND CROSS POINT SWITCHES AND ARRAYS OF SAME USING NONVOLATILE NANOTUBE BLOCKS von Huang X.M. Henry, Sivarajan Ramesh, Rueckes Thomas, BERTIN Claude L

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Resistive Change Elements Incorporating Carbon Based Diode Select Devices von BERTIN, Claude L, CLEAVELIN, C. Rinn, RUECKES, Thomas, HUANG, X.M. Henry

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Double Density Nonvolatile Nanotube Switch Memory Cells von KONSEK, Steven L, BERTIN, Claude L, RUECKES, Thomas, SIVARAJAN, Ramesh, Ghenciu, Eliodor G, MEINHOLD, Mitchell, HUANG, X.M. Henry

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Resistive Change Element Array Using Vertically Oriented Bit Lines von Huang X.M. Henry, Cleavelin C. Rinn, Rueckes Thomas, Bertin Claude L

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Stacked Three-Dimensional Arrays of Two Terminal Nanotube Switching Devices von KONSEK, Steven L, BERTIN, Claude L, RUECKES, Thomas, SIVARAJAN, Ramesh, Ghenciu, Eliodor G, MEINHOLD, Mitchell, HUANG, X.M. Henry

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CROSS POINT ARRAYS OF 1-R NONVOLATILE RESISTIVE CHANGE MEMORY CELLS USING CONTINUOUS NANOTUBE FABRICS von HUANG X.M. Henry, MANNING H. Montgomery, CLEAVELIN C. Rinn, BERTIN Claude L, RUECKES Thomas

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MEMORY ARRAYS USING NANOTUBE ARTICLES WITH REPROGRAMMABLE RESISTANCE von KONSEK, STEVEN L, STRASBURG, MAX, GUO, FRANK, MEINHOLD, MITCHELL, SIVARAJAN, RAMESH, HUANG, X.M. HENRY, RUECKES, THOMAS, BERTIN, CLAUDE L

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MEMORY ELEMENTS AND CROSS POINT SWITCHES AND ARRAYS OF SAME USING NONVOLATILE NANOTUBE BLOCKS von BERTIN, CLAUDE, L, HUANG, X.M., HENRY, SIVARAJAN, RAMESH, RUECKES, THOMAS

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NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME von KONSEK, STEVEN L, GHENCIU, ELIODOR G, MEINHOLD, MITCHELL, SIVARAJAN, RAMESH, HUANG, X.M. HENRY, RUECKES, THOMAS, BERTIN, CLAUDE L

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MEMORY ARRAYS USING NANOTUBE ARTICLES WITH REPROGRAMMABLE RESISTANCE von BERTIN, CLAUDE, L, KONSEK, STEVEN, L, STRASBURG, MAX, GUO, FRANK, MEINHOLD, MITCHELL, HUANG, X.M., HENRY, SIVARAJAN, RAMESH, RUECKES, THOMAS

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MEMORY ARRAYS USING NANOTUBE ARTICLES WITH REPROGRAMMABLE RESISTANCE von BERTIN, CLAUDE, L, KONSEK, STEVEN, L, STRASBURG, MAX, GUO, FRANK, MEINHOLD, MITCHELL, HUANG, X.M., HENRY, SIVARAJAN, RAMESH, RUECKES, THOMAS

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NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME von KONSEK, STEVEN L, GHENCIU, ELIODOR G, MEINHOLD, MITCHELL, SIVARAJAN, RAMESH, HUANG, X.M. HENRY, RUECKES, THOMAS, BERTIN, CLAUDE L

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NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME von KONSEK, STEVEN L, GHENCIU, ELIODOR G, MEINHOLD, MITCHELL, SIVARAJAN, RAMESH, HUANG, X.M. HENRY, RUECKES, THOMAS, BERTIN, CLAUDE L

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