High Temperature Oxygen Out-Diffusion from the Interfacial SiOx Bond Layer in Direct Silicon Bonded (DSB) Substrates von Sullivan, J., Kirk, H.R., Sien Kang, Ong, P.J., Henley, F.J.

Volltext

Layer-transfer process modifications for fabricating hybrid crystal orientation engineered substrates von Sullivan, J., Kirk, H.R., Sien Kang, Ong, P.J., Henley, F.J.

Volltext

Atomic-layer cleaving with Si/sub x/Ge/sub y/ strain layers for fabrication of Si and Ge-rich SOI device layers von Current, M.I., Farrens, S.N., Fuerfanger, M., Sien Kang, Kirk, H.R., Malik, I.J., Feng, L., Henley, F.J.

Volltext

Controlled cleavage process von F.J. HENLEY, N.W. CHEUNG

Volltext bestellen

The Genesis Process/sup TM/: a new SOI wafer fabrication method von En, W.G., Malik, I.J., Bryan, M.A., Farrens, S., Henley, F.J., Cheung, N.W., Chan, C.

Volltext

Test head design using electrooptic receivers and GaAs pin electronics for a gigahertz production test system von Henley, F.J., Choi, H.-J.

Volltext

Alpha particle collimator for micron‐sized beam von Henley, F. J., Oldham, W. G.

Volltext

Plasma-activated bonding, controlled cleave process, and non-contact smoothing for Germanium-on-Insulator (GeOI) manufacturing von Kirk, H.R., Lamm, A., Paler, A., Ong, P.J., Malik, I.J., Kang, S., Henley, F.J.

Volltext bestellen

An ultra high speed test system von Henley, F.J.

Volltext

A plasma immersion ion implantation system for SOI wafer fabrication von Feng, L.M., Lamm, A.J., Liu, W., Garces, E., Chan, C., Current, M.I., Henley, F.J.

Volltext bestellen

What is the future of sub-l00nm CMOS: Ultrashallow junctions or ultrathin SOI? von Current, M.I, Bedell, S.W, Malik, I.J, Feng, L.M, Henley, F.J

Volltext

Colliding Wind Binary X-ray Sources von Corcoran, Michael F., Hamaguchi, Kenji, Pollock, A. M. T., Pittard, J. M., Stevens, I. R., Henley, D. B., Moffat, A. F. J., Marchenko, S.

Volltext