Lateral β-Ga2O3 field effect transistors von Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H

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Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation von Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.

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Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit von Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.

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500 °C operation of β-Ga2O3 field-effect transistors von Islam, Ahmad E., Sepelak, Nicholas P., Liddy, Kyle J., Kahler, Rachel, Dryden, Daniel M., Williams, Jeremiah, Lee, Hanwool, Gann, Katie, Popp, Andreas, Leedy, Kevin D., Hendricks, Nolan S., Brown, Jeff. L., Heller, Eric R., Wang, Weisong, Zhu, Wenjuan, Thompson, Michael O., Chabak, Kelson D., Green, Andrew J.

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Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes von Farzana, Esmat, Bhattacharyya, Arkka, Hendricks, Nolan S., Itoh, Takeki, Krishnamoorthy, Sriram, Speck, James S.

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Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage von Farzana, Esmat, Roy, Saurav, Hendricks, Nolan S., Krishnamoorthy, Sriram, Speck, James S.

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Analytical Determination of Majority Carrier Diode Losses in Power Switching and Perspective for Ultrawide Bandgap Semiconductors von Hendricks, Nolan S., Piel, Joshua J., Islam, Ahmad E., Green, Andrew J.

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Theoretical Power Figure-of-Merit in β -Ga 2 O 3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation von Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.

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Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension von Williams, Jeremiah, Wang, Weisong, Hendricks, Nolan S., Adams, Aaron, Piel, Joshua, Dryden, Daniel M., Liddy, Kyle, Sepelak, Nicholas, Morell, Bradley, Islam, Ahmad, Green, Andrew

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Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes von Hendricks, Nolan S., Islam, Ahmad E., Sowers, Elizabeth A., Williams, Jeremiah, Dryden, Daniel M., Liddy, Kyle J., Wang, Weisong, Speck, James S., Green, Andrew J.

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Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown von Hendricks, Nolan S., Farzana, Esmat, Islam, Ahmad E., Leedy, Kevin D., Liddy, Kyle J., Williams, Jeremiah, Dryden, Daniel M., Adams, Aaron M., Speck, James S., Chabak, Kelson D., Green, Andrew J.

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Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates von Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Günter, Chabak, Kelson D., Jessen, Gregg H.

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Scaled T-Gate β -Ga 2 O 3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit von Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.

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Vertical metal–dielectric–semiconductor diode on (001) β-Ga 2 O 3 with high-κ TiO 2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown von Hendricks, Nolan S., Farzana, Esmat, Islam, Ahmad E., Leedy, Kevin D., Liddy, Kyle J., Williams, Jeremiah, Dryden, Daniel M., Adams, Aaron M., Speck, James S., Chabak, Kelson D., Green, Andrew J.

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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs von Chabak, Kelson D., McCandless, Jonathan P., Moser, Neil A., Green, Andrew J., Mahalingam, Krishnamurthy, Crespo, Antonio, Hendricks, Nolan, Howe, Brandon M., Tetlak, Stephen E., Leedy, Kevin, Fitch, Robert C., Wakimoto, Daiki, Sasaki, Kohei, Kuramata, Akito, Jessen, Gregg H.

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Lateral β-Ga 2 O 3 field effect transistors von Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H

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Thin channel β-Ga 2 O 3 MOSFETs with self-aligned refractory metal gates von Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Günter, Chabak, Kelson D., Jessen, Gregg H.

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Electrical Properties of Ga2O3 Schottky Barrier Diodes with and without Mesa Structure von Kim, Minyeong, Hendricks, Nolan, Moser, Neil, Shrestha, Pragya, Pookpanratana, Sujitra, Koo, Sang-Mo, Li, Qiliang

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Electrical Properties of Ga 2 O 3 Schottky Barrier Diodes with and without Mesa Structure von Kim, Minyeong, Hendricks, Nolan, Moser, Neil, Shrestha, Pragya, Pookpanratana, Sujitra, Koo, Sang-Mo, Li, Qiliang

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Evaluation of Boundary Layer and Urban Canopy Parameterizations for Simulating Wind in Miami during Hurricane Irma (2017) von Hendricks, Eric A., Knievel, Jason C., Nolan, David S.

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