Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer von García-Hernansanz, R., García-Hemme, E., Montero, D., Olea, J., del Prado, A., Mártil, I., Voz, C., Gerling, L.G., Puigdollers, J., Alcubilla, R.

Volltext

Transport mechanisms in hyperdoped silicon solar cells von García-Hernansanz, R, Duarte-Cano, S, Pérez-Zenteno, F, Caudevilla, D, Algaidy, S, García-Hemme, E, Olea, J, Pastor, D, Del Prado, A, San Andrés, E, Mártil, I, Ros, E, Puigdollers, J, Ortega, P, Voz, C

Volltext

Electrical transport properties in Ge hyperdoped with Te von Caudevilla, D, Algaidy, S, Pérez-Zenteno, F, Duarte-Cano, S, García-Hernansanz, R, Olea, J, San Andrés, E, del Prado, A, Barrio, R, Torres, I, García-Hemme, E, Pastor, D

Volltext

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap von Olea, J, López, E, Antolín, E, Martí, A, Luque, A, García-Hemme, E, Pastor, D, García-Hernansanz, R, del Prado, A, González-Díaz, G

Volltext

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector von García-Hemme, E., García-Hernansanz, R., Olea, J., Pastor, D., del Prado, A., Mártil, I., González-Díaz, G.

Volltext

Ti supersaturated Si by microwave annealing processes von Olea, J, González-Díaz, G, Pastor, D, García-Hemme, E, Caudevilla, D, Algaidy, S, Pérez-Zenteno, F, Duarte-Cano, S, García-Hernansanz, R, del Prado, A, Andrés, E San, Mártil, I, Lee, Yao-Jen, Hong, Tzu-Chieh, Chao, Tien-Sheng

Volltext

On the properties of GaP supersaturated with Ti von Olea, J., Algaidy, S., del Prado, A., García-Hemme, E., García-Hernansanz, R., Montero, D., Caudevilla, D., González-Díaz, G., Soria, E., Gonzalo, J.

Volltext

Experimental verification of intermediate band formation on titanium-implanted silicon von Castán, H., Pérez, E., García, H., Dueñas, S., Bailón, L., Olea, J., Pastor, D., García-Hemme, E., Irigoyen, M., González-Díaz, G.

Volltext

Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells von Garcia-Hernansanz, R., Perez-Zenteno, F., Duarte-Cano, S., Caudevilla, D., Algaidy, S., Garcia-Hemme, E., Olea, J., Pastor, D., del Prado, A., Andres, E. San, Martil, I., Ros, E., Puigdollers, J., Ortega, P., Voz, C.

Volltext

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures von García-Hemme, E, Montero, D, García-Hernansanz, R, Olea, J, Mártil, I, González-Díaz, G

Volltext

Extended Infrared Photoresponse in Te -Hyperdoped Si at Room Temperature von Wang, Mao, Berencén, Y., García-Hemme, E., Prucnal, S., Hübner, R., Yuan, Ye, Xu, Chi, Rebohle, L., Böttger, R., Heller, R., Schneider, H., Skorupa, W., Helm, M., Zhou, Shengqiang

Volltext

Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting von Olea, J, González-Díaz, G, Pastor, D, García-Hemme, E, Caudevilla, D, Algaidy, S, Pérez-Zenteno, F, Duarte-Cano, S, García-Hernansanz, R, del Prado, A, San Andrés, E, Mártil, I

Volltext

High-pressure sputtering deposition and in situ plasma oxidation of TiOx thin films as electron selective contact for photovoltaic applications von Pérez-Zenteno, F., García-Hemme, E., Torres, I., Barrio, R., Duarte, S., Benítez-Fernández, R., Caudevilla, D., García-Hernansanz, R., Olea, J., Pastor, D., Prado, A. del, San Andrés, E.

Volltext

High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs von Algaidy, S., Caudevilla, D., Perez-Zenteno, F., García-Hernansanz, R., García-Hemme, E., Olea, J., San Andrés, E., Duarte-Cano, S., Siegel, J., Gonzalo, J., Pastor, D., del Prado, A.

Volltext

Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells von Caudevilla, D., García-Hemme, E., San Andrés, E., Pérez-Zenteno, F., Torres, I., Barrio, R., García-Hernansanz, R., Algaidy, S., Olea, J., Pastor, D., del Prado, A.

Volltext

Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements von Montero, D, Caudevilla, D, Algaidy, S, Garcia-Hernansanz, R, Suler, A, Acosta-Alba, P, Kerdiles, S, Pastor, D, Garcia-Hemme, E, Roy, F, Olea, J

Volltext

Sub-bandgap spectral photo-response analysis of Ti supersaturated Si von García-Hemme, E., García-Hernansanz, R., Olea, J., Pastor, D., del Prado, A., Mártil, I., Gónzalez-Díaz, G.

Volltext

Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon von Pastor, D., Olea, J., del Prado, A., García-Hemme, E., García-Hernansanz, R., González-Díaz, G.

Volltext

Effects of the d-donor level of vanadium on the properties of Zn1−xVxO films von García-Hemme, E., Yu, K. M., Wahnon, P., González-Díaz, G., Walukiewicz, W.

Volltext

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals von García, H., Castán, H., Dueñas, S., García-Hemme, E., García-Hernansaz, R., Montero, D., González-Díaz, G.

Volltext