Pilot testing and preliminary design of moving bed biofilm reactors for nitrogen removal at the FREVAR wastewater treatment plant von RUSTEN, B, HELLSTRÖM, B. G, HELLSTRÖM, F, SEHESTED, O, SKJELFOSS, E, SVENDSEN, B

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Strategies for sludge handling in the Stockholm region von Mossakowska, A., Hellström, B.G., Hultman, B.

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs von von Haartman, M., Malm, B.G., Hellström, P.-E., Östling, M., Grasby, T.J., Whall, T.E., Parker, E.H.C., Lyutovich, K., Oehme, M., Kasper, E.

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A robust spacer gate process for deca-nanometer high-frequency MOSFETs von Hållstedt, J., Hellström, P.-E., Zhang, Z., Malm, B.G., Edholm, J., Lu, J., Zhang, S.-L., Radamson, H.H., Östling, M.

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1/f noise in Si and Si0.7Ge0.3 pMOSFETs von von Haartman, M, Lindgren, A.C, Hellstrom, P.E, Malm, B.G, Zhang, Shi-Li, Ostling, M

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Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics von von Haartman, M., Wu, D., Malm, B.G., Hellström, P.-E., Zhang, S.-L., Östling, M.

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Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics von Haartman, M. von, Westlinder, J., Wu, D., Malm, B.G., Hellström, P.-E., Olsson, J., Östling, M.

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Quasi-free scattering with 6,8He beams von Chulkov, L.V., Aksouh, F., Bleile, A., Bochkarev, O.V., Cortina-Gil, D., Dobrovolsky, A.V., Egelhof, P., Geissel, H., Hellström, M., Isaev, N.B., Kiselev, O.A., Komkov, B.G., Matoš, M., Moroz, F.N., Münzenberg, G., Mutterer, M., Mylnikov, V.A., Neumaier, S.R., Pribora, V.N., Seliverstov, D.M., Sergeev, L.O., Shrivastava, A., Sümmerer, K., Torilov, S.Yu, Weick, H., Winkler, M., Yatsoura, V.I.

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Leakage current reduction in 80 nm biaxially strained Si nMOSFETs on in-situ doped SiGe virtual substrates von Hallstedt, J., Malm, B.G., Hellstrom, P.-E., Ostling, M., Oehme, M., Werner, J., Lyutovich, K., Kasper, E.

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1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/ pMOSFETs von von Haartman, M., Lindgren, A.C., Hellstrom, P.E., Malm, B.G., Shi-Li Zhang, Ostling, M.

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Towards Schottky-barrier source/drain MOSFETs von Ostling, M., Gudmundsson, V., Hellstrom, P.-E., Malm, B.G., Zhen Zhang, Shi-Li Zhang

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Long-lived noble gas radionuclides von Kutschera, W., Paul, M., Ahmad, I., Antaya, T.A., Billquist, P.J., Glagola, B.G., Harkewicz, R., Hellstrom, M., Morrissey, D.J., Pardo, R.C., Rehm, K.E., Sherrill, B.M., Steiner, M.

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Device integration issues towards 10 nm MOSFETs von Östling, Mikael, Malm, B. Gunnar, von Haartman, Martin, Hållstedt, Julius, Zhang, Zhen, Hellstrom, Per-Erik, Zhang, Shili

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Novel Integration Concepts for SIGE-Based RF-MOSFETS von Ostling, Mikael, Malm, B.G., Hellstrom, P.E., Radamson, H.H., Isheden, C., Seger, J., von Haartman, M., Zhang, S.L.

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