Increasing Functionality of Wafer’s Backside: Analysis of Si and WS₂ Backside Power-Switch von Mirabelli, G., Chen, R., Ahmed, Z., Chehab, B., Zografos, O., Hiblot, G., Weckx, P., Hellings, G., Ryckaert, J.

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Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study von Vandemaele, M., Kaczer, B., Tyaginov, S., Franco, J., Bury, E., Chasin, A., Makarov, A., Hellings, G., Groeseneken, G.

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Monte Carlo Analysis of -Type SiGe-Channel Nanosheet Performance von Bufler, F. M., Arimura, H., Favia, P., Eneman, G., Matagne, P., Horiguchi, N., Hellings, G.

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Monte Carlo Comparison of n-Type and p-Type Nanosheets With FinFETs: Effect of the Number of Sheets von Bufler, F. M., Jang, D., Hellings, G., Eneman, G., Matagne, P., Spessot, A., Na, M. H.

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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance von Brunco, D. P., De Jaeger, B., Eneman, G., Mitard, J., Hellings, G., Satta, A., Terzieva, V., Souriau, L., Leys, F. E., Pourtois, G., Houssa, M., Winderickx, G., Vrancken, E., Sioncke, S., Opsomer, K., Nicholas, G., Caymax, M., Stesmans, A., Van Steenbergen, J., Mertens, P. W., Meuris, M., Heyns, M. M.

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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions von Eneman, G., Wiot, M., Brugere, A., Casain, O.S.I., Sonde, S., Brunco, D.P., De Jaeger, B., Satta, A., Hellings, G., De Meyer, K., Claeys, C., Meuris, M., Heyns, M.M., Simoen, E.

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3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability von Vandooren, A., Franco, J., Parvais, B., Wu, Z., Witters, L., Walke, A., Li, W., Peng, L., Deshpande, V., Bufler, F. M., Rassoul, N., Hellings, G., Jamieson, G., Inoue, F., Verbinnen, G., Devriendt, K., Teugels, L., Heylen, N., Vecchio, E., Zheng, T., Rosseel, E., Vanherle, W., Hikavyy, A., Chan, B. T., Ritzenthaler, R., Besnard, G., Schwarzenbach, W., Gaudin, G., Radu, I., Nguyen, B.-Y., Waldron, N., De Heyn, V., Mocuta, D., Collaert, N.

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Characteristics of cross-sectional atom probe analysis on semiconductor structures von Koelling, S., Innocenti, N., Hellings, G., Gilbert, M., Kambham, A.K., De Meyer, K., Vandervorst, W.

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High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants von Hellings, G., Mitard, J., Eneman, G., De Jaeger, B., Brunco, D.P., Shamiryan, D., Vandeweyer, T., Meuris, M., Heyns, M.M., De Meyer, K.

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Analysis of the Features of Hot-Carrier Degradation in FinFETs von Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

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Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs von Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

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Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology von Eneman, G., De Jaeger, B., Simoen, E., Brunco, D.P., Hellings, G., Mitard, J., De Meyer, K., Meuris, M., Heyns, M.M.

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Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions von ALIAN, A, BRAMMERTZ, G, HEYNS, M, WALDRON, N, MERCKLING, C, HELLINGS, G, LIN, H. C, WANG, W. E, MEURIS, M, SIMOEN, E, DEMEYER, K

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Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures von Benbakhti, B., Ayubi-Moak, J.S., Kalna, K., Lin, D., Hellings, G., Brammertz, G., De Meyer, K., Thayne, I., Asenov, A.

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Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection von Malinowski, P.E., John, J., Duboz, J.Y., Hellings, G., Lorenz, A., Madrid, J.G.R., Sturdevant, C., Cheng, K., Leys, M., Derluyn, J., Das, J., Germain, M., Minoglou, K., De Moor, P., Frayssinet, E., Semond, F., Hochedez, J.-F., Giordanengo, B., Mertens, R.

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Short-channel epitaxial germanium pMOS transistors von Eneman, G., De Jaeger, B., Wang, G., Mitard, J., Hellings, G., Brunco, D.P., Simoen, E., Loo, R., Caymax, M., Claeys, C., De Meyer, K., Meuris, M., Heyns, M.M.

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Comphy — A compact-physics framework for unified modeling of BTI von Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P.J., Linten, D., Kaczer, B., Grasser, T.

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Increasing Functionality of Wafer's Backside: Analysis of Si and WS } Backside Power-Switch von Mirabelli, G., Chen, R., Ahmed, Z., Chehab, B., Zografos, O., Hiblot, G., Weckx, P., Hellings, G., Ryckaert, J.

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Monte Carlo Analysis of p-Type Si \text Ge \text -Channel Nanosheet Performance von Bufler, F. M., Arimura, H., Favia, P., Eneman, G., Matagne, P., Horiguchi, N., Hellings, G.

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Photochemical Generation of a Primary Vinyl Cation from (E)-Bromostyrene:  Mechanisms of Formation and Reaction von Gronheid, Roel, Zuilhof, Han, Hellings, Mark G, Cornelisse, Jan, Lodder, Gerrit

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