Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers von Eckey, L., von Gfug, U., Holst, J., Hoffmann, A., Kaschner, A., Siegle, H., Thomsen, C., Schineller, B., Heime, K., Heuken, M., Schön, O., Beccard, R.

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Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE) von Lim, P.H, Schineller, B, Schön, O, Heime, K, Heuken, M

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Compensation effects in Mg-doped GaN epilayers von Eckey, L, Von Gfug, U, Holst, J, Hoffmann, A, Schineller, B, Heime, K, Heuken, M, Schön, O, Beccard, R

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Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN von Germain, M., Kartheuser, E., Gurskii, A. L., Lutsenko, E. V., Marko, I. P., Pavlovskii, V. N., Yablonskii, G. P., Heime, K., Heuken, M., Schineller, B.

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Concentric ring contacts used for the determination of contact resistances von Rechid, J., Heime, K.

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MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor von Giesen, Ch, Szymakowski, A, Rushworth, S, Heuken, M, Heime, K

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First realized polarization converter based on hybrid supermodes von Mertens, K., Opitz, B., Hovel, R., Heime, K., Schmitt, H.J.

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Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm von Yablonskii, G. P., Lutsenko, E. V., Pavlovskii, V. N., Marko, I. P., Gurskii, A. L., Zubialevich, V. Z., Mudryi, A. V., Schön, O., Protzmann, H., Lünenbürger, M., Schineller, B., Heuken, M., Kalisch, H., Heime, K.

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LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires von Guimarães, F.E.G., Elsner, B., Westphalen, R., Spangenberg, B., Geelen, H.J., Balk, P., Heime, K.

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InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm von Joullié, A., Skouri, E. M., Garcia, M., Grech, P., Wilk, A., Christol, P., Baranov, A. N., Behres, A., Kluth, J., Stein, A., Heime, K., Heuken, M., Rushworth, S., Hulicius, E., Simecek, T.

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Low-pressure metal organic vapour-phase epitaxy and characterization of strained InAs(P)/InAsSb superlattices for infrared emitters von Behres, A., Püttjer, D., Heime, K.

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The 1/f noise of InP based 2DEG devices and its dependence on mobility von Berntgen, J., Heime, K., Daumann, W., Auer, U., Tegude, F.-J., Matulionis, A.

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A Study of Sulphur Diffusion in ZnMgSSe/ZnSe Quantum Wells by Energy-Loss Imaging in a Transmission Electron Microscope von Walther, T., Kalisch, H., Heime, K., Heuken, M., Marko, I., Yablonskii, G.P.

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Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels von Matulionis, A., Aninkevičius, V., Liberis, J., Matulionienė, I., Berntgen, J., Heime, K., Hartnagel, H. L.

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Al-free InP-based high electron mobility transistors: Design, fabrication and performance von Mesquida Küsters, A, Heime, K

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Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy von Liu, Q, Lakner, H, Taudt, W, Heuken, M, Mendorf, C, Heime, K, Kubalek, E

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The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE von Schineller, B, Guttzeit, A, Lim, P.H, Schwambera, M, Heime, K, Schön, O, Heuken, M

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Doping of InAs, GaSb and InPSb by low pressure MOVPE von von Eichel-Streiber, C., Behet, M., Heuken, M., Heime, K.

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Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode von Schineller, B, Junas, Y, Heuken, M, Heime, K

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Characterization of MOVPE grown InPSb/InAs heterostructures von Drews, D., Schneider, A., Werninghaus, T., Behres, A., Heuken, M., Heime, K., Zahn, D.R.T.

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